Abstract: In a process for projecting or irradiating a pattern on a resist film or the like on a substrate such as a semiconductive wafer, the entire area of the resist film is subjected to a pre-exposure at an intensity less than a sensitivity or a critical exposure level of the resist film at which the resist at a selected (exposed or unexposed) area may be completely dissolved away and then a desired pattern is projected or irradiated on the pre-exposed resist film. These steps may be reversed. In both cases, the apparent sensitivity of the resist film may be improved so that the pattern making time may become very short. An apparatus for carrying out the above process is also disclosed.

Abstract: A process for analyzing charged particles wherein charged particles are impinged on a film of resist which is made of polymethylmethacrylate sensitive to charged particles, the resist film is dissolved and the mass of charged particles impinged is measured in terms of the dissolved resist or the resist left.

Abstract: The present invention enables a decrease in etching velocity in an ion-beam etching system without decreasing the current density of the ion beam. The ion-etching is performed at a constant value of ion-beam current density and an increased partial pressure of oxygen or other suitable gas in the specimen chamber. The partial pressure of oxygen is increased until the intensity of a secondary ion-beam from the specimen reaches a saturation value. Under these conditions a stable reduced etching velocity is obtained, the value of which is determined by the ion-beam current density, the partial pressure of oxygen and the previously determined characteristics of the specimen.