Patents by Inventor Fumiya TANIFUJI

Fumiya TANIFUJI has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • SUBSTRATE PROCESSING METHOD AND SUBSTRATE PROCESSING APPARATUS
    Publication number: 20230386794
    Abstract: A substrate processing method is a substrate processing method for a substrate processing apparatus. The method includes: a) supplying a process gas containing fluorocarbon and a rare gas to a processing container in which a placing pedestal for placing a processing target object including a first region made of silicon oxide is arranged; b) plasma-processing the processing target object by a first plasma of the process gas generated under a first plasma generation condition; c) plasma-processing the processing target object in which a bias potential is generated on the processing target object by a second plasma of the process gas generated under a second plasma generation condition different from the first plasma generation condition; and d) repeating the b) and the c).
    Type: Application
    Filed: August 8, 2023
    Publication date: November 30, 2023
    Applicant: Tokyo Electron Limited
    Inventors: Satoru NAKAMURA, Shinya MORIKITA, Fumiya TANIFUJI
  • SUBSTRATE PROCESSING METHOD AND SUBSTRATE PROCESSING APPARATUS
    Publication number: 20210296090
    Abstract: A substrate processing method is a substrate processing method for a substrate processing apparatus. The method includes: a) supplying a process gas containing fluorocarbon and a rare gas to a processing container in which a placing pedestal for placing a processing target object including a first region made of silicon oxide is arranged; b) plasma-processing the processing target object by a first plasma of the process gas generated under a first plasma generation condition; c) plasma-processing the processing target object in which a bias potential is generated on the processing target object by a second plasma of the process gas generated under a second plasma generation condition different from the first plasma generation condition; and d) repeating the b) and the c).
    Type: Application
    Filed: March 8, 2021
    Publication date: September 23, 2021
    Applicant: Tokyo Electron Limited
    Inventors: Satoru NAKAMURA, Shinya MORIKITA, Fumiya TANIFUJI