Abstract: The present disclosure provides an exhaust gas purification catalyst with increased catalytic activity. The exhaust gas purification catalyst comprises a metal oxide support and Rh particles supported on the metal oxide support, wherein the metal oxide support is doped with a cation having a higher oxidation number than the cation of the metal oxide support. The metal oxide support may be a SrTiO3 support doped with greater than 0 mol % and 8 mol % or lower Nb, a ZrO2 support doped with 5 mol % to 20 mol % Nb, or an Al2O3 support doped with greater than 0 mol % and 7 mol % or lower Ti.

Abstract: A dielectric ceramic composition that contains an oxide of A, R, and B and an oxide of Mn. The A is at least one selected from the group consisting of K and Na. The R is at least one selected from the group consisting of La, Ce, Pr, Nd, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb, Lu, Y, and Sc. The B is at least one selected from the group consisting of Nb and Ta. The molar ratio of the A:R:B:Mn is 2?x:1+x/3:5+y:z. The x, y, and z satisfy ?0.3?x?0.6, ?0.5?y?0.5, and 0.001?z?0.5, respectively.

Abstract: A solar cell according to the present disclosure includes a first electrode, a second electrode, a photoelectric conversion layer located between the first electrode and the second electrode, and a semiconductor layer located between the first electrode and the photoelectric conversion layer, in which at least one selected from the group consisting of the first electrode and the second electrode is translucent, and the semiconductor layer contains a compound containing Na, Zn, and O.

Abstract: The present disclosure is to provide a multi-junction light energy conversion element including a material having a band gap suitable for a light energy conversion layer located upstream in an incidence direction of light. The present disclosure provides a light energy conversion element, comprising a first light energy conversion layer containing SrZn2N2 and a second light energy conversion layer containing an light energy conversion material. The light energy conversion material has a narrower band gap than the SrZn2N2.

Abstract: A dielectric ceramic composition that contains an oxide of A, R, and B and an oxide of Mn. The A is at least one selected from the group consisting of K and Na. The R is at least one selected from the group consisting of La, Ce, Pr, Nd, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb, Lu, Y, and Sc. The B is at least one selected from the group consisting of Nb and Ta. The molar ratio of the A:R:B:Mn is 2?x:1+x/3:5+y:z. The x, y, and z satisfy ?0.3?x?0.6, ?0.5?y?0.5, and 0.001?z?0.5, respectively.

Abstract: A solar cell according to the present disclosure includes a first electrode, a second electrode, a photoelectric conversion layer located between the first electrode and the second electrode, and a semiconductor layer located between the first electrode and the photoelectric conversion layer, in which at least one selected from the group consisting of the first electrode and the second electrode is translucent, and the semiconductor layer contains a compound containing Na, Zn, and O.

Abstract: An inorganic compound semiconductor of the present disclosure contains yttrium, zinc, and nitrogen.

Abstract: The present invention provides a zinc nitride compound suitable for electronic devices such as high-speed transistors, high-efficiency visible light-emitting devices, high-efficiency solar cells, and high-sensitivity visible light sensors. The zinc nitride compound is represented, for example, by the chemical formula CaZn2N2 or the chemical formula X12ZnN2 wherein X1 is Be or Mg. The zinc nitride compound is preferably synthesized at a high pressure of 1 GPa or more.

Abstract: The present disclosure provides a light energy conversion element in which a material having a bandgap suitable for a light energy conversion layer is used. The light energy conversion element according to the present disclosure comprises a light energy conversion layer containing BaBi2S4 having a hexagonal crystal structure.

Abstract: The present disclosure provides a light energy conversion element in which a material having a bandgap suitable for a light energy conversion layer is used. The light energy conversion element according to the present disclosure comprises a light energy conversion layer containing BaBi2S4 having a hexagonal crystal structure.

Abstract: The present disclosure is to provide a multi-junction light energy conversion element including a material having a band gap suitable for a light energy conversion layer located upstream in an incidence direction of light. The present disclosure provides a light energy conversion element, comprising a first light energy conversion layer containing SrZn2N2 and a second light energy conversion layer containing an light energy conversion material. The light energy conversion material has a narrower band gap than the SrZn2N2.

Abstract: The present invention provides a zinc nitride compound suitable for electronic devices such as high-speed transistors, high-efficiency visible light-emitting devices, high-efficiency solar cells, and high-sensitivity visible light sensors. The zinc nitride compound is represented, for example, by the chemical formula CaZn2N2 or the chemical formula X12ZnN2 wherein X1 is Be or Mg. The zinc nitride compound is preferably synthesized at a high pressure of 1 GPa or more.

Abstract: The present invention provides a zinc nitride compound suitable for electronic devices such as high-speed transistors, high-efficiency visible light-emitting devices, high-efficiency solar cells, and high-sensitivity visible light sensors. The zinc nitride compound is represented, for example, by the chemical formula CaZn2N2 or the chemical formula X12ZnN2 wherein X1 is Be or Mg. The zinc nitride compound is preferably synthesized at a high pressure of 1 GPa or more.

Abstract: The present invention provides a zinc nitride compound suitable for electronic devices such as high-speed transistors, high-efficiency visible light-emitting devices, high-efficiency solar cells, and high-sensitivity visible light sensors. The zinc nitride compound is represented, for example, by the chemical formula CaZn2N2 or the chemical formula X12ZnN2 wherein X1 is Be or Mg. The zinc nitride compound is preferably synthesized at a high pressure of 1 GPa or more.

Abstract: The invention relates to a technique for forming a thin film of good quality on a base substance via an intermediate layer. Such a film formation technique is suitably applicable to formation of an oxide high-temperature superconductor thin film usable for a superconducting wire material, a superconducting device or the like. In the method of forming a thin film on a base substance via an intermediate layer, an interface energy Ea at an interface A between the base substance and the intermediate layer, an interface energy Eb at an interface B between the intermediate layer and the thin film, and an interface energy Ec at an interface C between the base substance and the thin film in a state where the intermediate layer is omitted are calculated, and then a substance for the intermediate layer is selected so as to satisfy conditions of Ea<Ec and Eb<Ec.

Abstract: The invention relates to a technique for forming a single crystalline thin film of good quality on an underlayer. Such a technique is suitably applicable to provision of an oxide high-temperature superconductor thin film usable for a superconducting wire material, a superconducting device or the like. The single crystalline thin film formed on a substratum is made of a substance different from that of the substratum. A specific atomic layer contained in common in the substratum and the thin film is shared at an interface between the substratum and the thin film. In a region as adjacent to the interface as 100 or fewer unit cells of the thin film apart from the interface, a ratio of crystalline region having grown with an orientation of ±2 degrees or less deviation angle on the basis of a crystal orientation of the substratum is 50% or more.