Patents by Inventor Fumiyuki Nihei

Fumiyuki Nihei has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Semiconductor device using graphene and method of manufacturing the same
    Patent number: 8168964
    Abstract: A semiconductor graphene is used for a channel layer, and a metal graphene is used for electrode layers for a source, a drain, and a gate which serve as interconnections as well. An oxide is used for a gate insulating layer. The channel layer and the electrode layers are located on the same plane.
    Type: Grant
    Filed: February 27, 2008
    Date of Patent: May 1, 2012
    Assignee: NEC Corporation
    Inventors: Hidefumi Hiura, Fumiyuki Nihei, Tetsuya Tada, Toshihiko Kanayama
  • SEMICONDUCTOR DEVICE USING GRAPHENE AND METHOD OF MANUFACTURING THE SAME
    Publication number: 20100102292
    Abstract: A semiconductor graphene is used for a channel layer, and a metal graphene is used for electrode layers for a source, a drain, and a gate which serve as interconnections as well. An oxide is used for a gate insulating layer. The channel layer and the electrode layers are located on the same plane.
    Type: Application
    Filed: February 27, 2008
    Publication date: April 29, 2010
    Applicant: NEC Corporation
    Inventors: Hidefumi Hiura, Fumiyuki Nihei, Tetsuya Tada, Toshihiko Kanayama
  • ID tag
    Patent number: 7586215
    Abstract: When a predetermined voltage is applied between electrodes (302), metal ions deposit in a solid electrolyte (308), and thereby a conduction channel (310) is formed therein. The solid electrolyte switch (300) is thus turned on. Because this deposition mechanism is reversible, application of reverse voltage between the electrodes of the solid electrolyte switch (300) already turned on makes the deposited metal atoms to migrate in the solid electrolyte to thereby thin the conduction channel 300, thereby the channel finally disappears, and the solid electrolyte switch (300) is turned into a non-conductive state. Use of this switch successfully realizes an IC tag which can automatically be nullified without artificial nullification.
    Type: Grant
    Filed: December 17, 2004
    Date of Patent: September 8, 2009
    Assignee: NEC Corporation
    Inventors: Wataru Hattori, Hiroo Hongo, Fumiyuki Nihei, Hiroshi Sunamura
  • Id tag
    Publication number: 20070132590
    Abstract: When a predetermined voltage is applied between electrodes (302), metal ions deposit in a solid electrolyte (308), and thereby a conduction channel (310) is formed therein. The solid electrolyte switch (300) is thus turned on. Because this deposition mechanism is reversible, application of reverse voltage between the electrodes of the solid electrolyte switch (300) already turned on makes the deposited metal atoms to migrate in the solid electrolyte to thereby thin the conduction channel 300, thereby the channel finally disappears, and the solid electrolyte switch (300) is turned into a non-conductive state. Use of this switch successfully realizes an IC tag which can automatically be nullified without artificial nullification.
    Type: Application
    Filed: December 17, 2004
    Publication date: June 14, 2007
    Inventors: Wataru Hattori, Hiroo Hongo, Fumiyuki Nihei, Hiroshi Sunamura