Abstract: Methods and apparatuses for controlling precursor flow in a semiconductor processing tool are disclosed. A method may include flowing gas through a gas line, opening an ampoule valve(s), before a dose step, to start a flow of precursor from the ampoule to a process chamber through the gas line, closing the ampoule valve(s) to stop the precursor from flowing out of the ampoule, opening a process chamber valve, at the beginning of the dose step, to allow the flow of precursor to enter the process chamber, and closing the process chamber valve, at the end of the dose step, to stop the flow of precursor from entering the process chamber. A controller may include at least one memory and at least one processor and the at least one memory may store instructions for controlling the at least one processor to control precursor flow in a semiconductor processing tool.

Abstract: Methods and apparatuses for controlling precursor flow in a semiconductor processing tool are disclosed. A method may include flowing gas through a gas line, opening an ampoule valve(s), before a dose step, to start a flow of precursor from the ampoule to a process chamber through the gas line, closing the ampoule valve(s) to stop the precursor from flowing out of the ampoule, opening a process chamber valve, at the beginning of the dose step, to allow the flow of precursor to enter the process chamber, and closing the process chamber valve, at the end of the dose step, to stop the flow of precursor from entering the process chamber. A controller may include at least one memory and at least one processor and the at least one memory may store instructions for controlling the at least one processor to control precursor flow in a semiconductor processing tool.

Abstract: Methods and apparatuses for controlling precursor flow in a semiconductor processing tool are disclosed. A method may include flowing gas through a gas line, opening an ampoule valve(s), before a dose step, to start a flow of precursor from the ampoule to a process chamber through the gas line, closing the ampoule valve(s) to stop the precursor from flowing out of the ampoule, opening a process chamber valve, at the beginning of the dose step, to allow the flow of precursor to enter the process chamber, and closing the process chamber valve, at the end of the dose step, to stop the flow of precursor from entering the process chamber. A controller may include at least one memory and at least one processor and the at least one memory may store instructions for controlling the at least one processor to control precursor flow in a semiconductor processing tool.

Abstract: Methods and apparatuses for controlling precursor flow in a semiconductor processing tool are disclosed. A method may include flowing gas through a gas line, opening an ampoule valve(s), before a dose step, to start a flow of precursor from the ampoule to a process chamber through the gas line, closing the ampoule valve(s) to stop the precursor from flowing out of the ampoule, opening a process chamber valve, at the beginning of the dose step, to allow the flow of precursor to enter the process chamber, and closing the process chamber valve, at the end of the dose step, to stop the flow of precursor from entering the process chamber. A controller may include at least one memory and at least one processor and the at least one memory may store instructions for controlling the at least one processor to control precursor flow in a semiconductor processing tool.

Abstract: Methods and apparatuses for controlling precursor flow in a semiconductor processing tool are disclosed. A method may include flowing gas through a gas line, opening an ampoule valve(s), before a dose step, to start a flow of precursor from the ampoule to a process chamber through the gas line, closing the ampoule valve(s) to stop the precursor from flowing out of the ampoule, opening a process chamber valve, at the beginning of the dose step, to allow the flow of precursor to enter the process chamber, and closing the process chamber valve, at the end of the dose step, to stop the flow of precursor from entering the process chamber. A controller may include at least one memory and at least one processor and the at least one memory may store instructions for controlling the at least one processor to control precursor flow in a semiconductor processing tool.

Abstract: Methods and apparatuses for depositing films in high aspect ratio features and trenches on substrates using atomic layer deposition and deposition of a sacrificial layer during atomic layer deposition are provided. Sacrificial layers are materials deposited at or near the top of features and trenches prior to exposing the substrate to a deposition precursor such that adsorbed precursor on the sacrificial layer is removed in an etching operation for etching the sacrificial layer prior to exposing the substrate to a second reactant and a plasma to form a film.

Abstract: Methods and apparatuses for depositing films in high aspect ratio features and trenches on substrates using atomic layer deposition and deposition of a sacrificial layer during atomic layer deposition are provided. Sacrificial layers are materials deposited at or near the top of features and trenches prior to exposing the substrate to a deposition precursor such that adsorbed precursor on the sacrificial layer is removed in an etching operation for etching the sacrificial layer prior to exposing the substrate to a second reactant and a plasma to form a film.

Abstract: Methods and apparatuses for controlling precursor flow in a semiconductor processing tool are disclosed. A method may include flowing gas through a gas line, opening an ampoule valve(s), before a dose step, to start a flow of precursor from the ampoule to a process chamber through the gas line, closing the ampoule valve(s) to stop the precursor from flowing out of the ampoule, opening a process chamber valve, at the beginning of the dose step, to allow the flow of precursor to enter the process chamber, and closing the process chamber valve, at the end of the dose step, to stop the flow of precursor from entering the process chamber. A controller may include at least one memory and at least one processor and the at least one memory may store instructions for controlling the at least one processor to control precursor flow in a semiconductor processing tool.

Abstract: Methods and apparatuses for controlling precursor flow in a semiconductor processing tool are disclosed. A method may include flowing gas through a gas line, opening an ampoule valve(s), before a dose step, to start a flow of precursor from the ampoule to a process chamber through the gas line, closing the ampoule valve(s) to stop the precursor from flowing out of the ampoule, opening a process chamber valve, at the beginning of the dose step, to allow the flow of precursor to enter the process chamber, and closing the process chamber valve, at the end of the dose step, to stop the flow of precursor from entering the process chamber. A controller may include at least one memory and at least one processor and the at least one memory may store instructions for controlling the at least one processor to control precursor flow in a semiconductor processing tool.

Abstract: In a method of fabricating an apparatus for use in a sensing application, a plurality of nano-fingers are formed on a substrate and a Raman-active material nano-particle is formed on respective tips of the nano-fingers. In addition, the Raman-active material nano-particles on the tips of adjacent ones of the nano-fingers are caused to come into contact with the Raman-active material nano-particle on the tip of at least another one of the plurality of nano-fingers to form respective clusters and the clusters of Raman-active material nano-particles are transferred to a component layer from the plurality of nano-fingers while maintaining a spatial relationship between the contacting Raman-active material nano-particles.

Abstract: A fabrication process for conformal coating of a thin polymer electrolyte layer on nanostructured electrode materials for three-dimensional micro/nanobattery applications, compositions thereof, and devices incorporating such compositions. In embodiments, conformal coatings (such as uniform thickness of around 20-30 nanometer) of polymer Polymethylmethacralate (PMMA) electrolyte layers around individual Ni—Sn nanowires were used as anodes for Li ion battery. This configuration showed high discharge capacity and excellent capacity retention even at high rates over extended cycling, allowing for scalable increase in areal capacity with electrode thickness. Such conformal nanoscale anode-electrolyte architectures were shown to be efficient Li-ion battery system.

Abstract: A self-arranging, luminescence-enhancement device 101 for surface-enhanced luminescence. The self-arranging, luminescence-enhancement device 101 for surface-enhanced luminescence includes a substrate 110, and a plurality 120 of flexible columnar structures. A flexible columnar structure 120-1 of the plurality 120 includes a flexible column 120-1A, and a metallic cap 120-1B coupled to the apex 120-1 C of the flexible column 120-1A. At least the flexible columnar structure 120-1 and a second flexible columnar structure 120-2 are configured to self-arrange into a close-packed configuration with at least one molecule 220-1 disposed between at least the metallic cap 120-1B and a second metallic cap 120-2B of respective flexible columnar structure 120-1 and second flexible columnar structure 120-2.

Abstract: In a method of fabricating an apparatus for use in a sensing application, a plurality of nano-fingers are formed on a substrate and a Raman-active material nano-particle is formed on respective tips of the nano-fingers. In addition, the Raman-active material nano-particles on the tips of adjacent ones of the nano-fingers are caused to come into contact with the Raman-active material nano-particle on the tip of at least another one of the plurality of nano-fingers to form respective clusters and the clusters of Raman-active material nano-particles are transferred to a component layer from the plurality of nano-fingers while maintaining a spatial relationship between the contacting Raman-active material nano-particles.

Abstract: An apparatus includes a substrate and a plurality of nano-fingers attached at respective first ends to the substrate and freely movable along their lengths, in which a first set of the plurality of nano-fingers comprises a first physical characteristic, wherein a second set of the plurality of nano-fingers comprises a second physical characteristic, and wherein the first physical characteristic differs from the second physical characteristic.

Abstract: A memristive device includes: a first electrode; a second electrode; a memristive matrix interposed between the first electrode and the second electrode; a porous dopant diffusion element in physical contact with the memristive matrix and in proximity to the first electrode and the second electrode; and a first mobile dopant species which moves through the porous dopant diffusion element in response to a programming electrical field. A method for using a memristive device having a porous dopant diffusion element includes applying a voltage bias to generate a programming electrical field such that dopants move through the porous dopant diffusion element, thereby changing the distribution of dopants within a memristive matrix to form a first state; removing the voltage bias, the dopants being substantially immobile in the absence of the programming electrical field; and applying a reading energy to the memristive device to sense the first state.

Abstract: An apparatus for performing surface enhanced Raman spectroscopy (SERS) includes a substrate and a plurality of nano-pillars, each of the plurality of nano-pillars having a first end attached to the substrate, a second end located distally from the substrate, and a body portion extending between the first end and the second end, in which the plurality of nano-pillars are arranged in an array on the substrate, and in which each of the plurality of nano-pillars is formed of a polymer material that is functionalized to expand in the presence of a fluid to cause gaps between the plurality of nano-pillars to shrink when the fluid is supplied onto the nano-pillars.

Abstract: A device for Surface Enhanced Raman Scattering (SERS). The device includes a plurality of nanostructures protruding from a surface of a substrate, a SERS active metal disposed on a portion of said plurality of nanostructures, and a low friction film disposed over the plurality of nanostructures and the SERS active metal. The low friction film is to prevent adhesion between the plurality of nanostructures.

Abstract: A substrate for Surface Enhanced Raman Scattering (SERS). The substrate comprises at least one nanostructure protruding from a surface of the substrate and a SERS active metal over the at least one nanostructure, wherein the SERS active metal substantially covers the at least one nanostructure and the SERS active metal creates a textured layer on the at least one nanostructure.

Abstract: Systems and methods employ a layer having a pattern that provides multiple discrete guided mode resonances for respective couplings of separated wavelengths into the layer. Further, a structure including features shaped to enhance Raman scattering to produce light of the resonant wavelengths can be employed with the patterned layer.

Abstract: An apparatus for performing SERS includes a substrate and flexible nano-fingers, each of the nano-fingers having a first end attached to the substrate, a free second end, and a body portion extending between the first end and the second end, in which the nano-fingers are arranged in an array on the substrate. The apparatus also includes an active material layer disposed on each of the second ends of the plurality of nano-fingers, in which the nano-fingers are to be in a substantially collapsed state in which the active layers on at least two of the nano-fingers contact each other under dominant attractive forces between the plurality of nano-fingers and in which the active material layers are to repel each other when the active material layers are electrostatically charged.