Abstract: The present invention relates to a semiconductor integrated circuit device and a process for producing the same. A hole is bored in an insulating film above a portion of a wiring which is to be connected to another wiring by means of a focused ion beam. The inside of the hole and a predetermined region on the insulating film are irradiated with either a laser beam or an ion beam in a metal compound gas to deposit metal in the hole and on said region and a connecting wiring is formed by means of optically pumped CVD. To electrically connect upper- and lower-level wirings in a multilayer wiring structure by a connecting wiring, the connecting wiring is electrically isolated from an intermediate-level wiring through which it extends. The above-described arrangement enables provision of a hole with a focused ion beam and formation of a metal wiring on a selective region by means, for example, optically pumped CVD.