Patents by Inventor Fuodoor Gologhlan

Fuodoor Gologhlan has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Method of in-situ cleaning for LPCVD TEOS pump
    Patent number: 6498104
    Abstract: In one embodiment, the present invention relates to a method of cleaning a low pressure chemical vapor deposition apparatus having TEOS material build-up therein involving contacting the low pressure chemical vapor deposition apparatus with a composition containing at least one lower alcohol. In another embodiment, the present invention relates to a system for cleaning a low pressure chemical vapor deposition apparatus having TEOS material build-up therein, containing a supply of a composition comprising at least one lower alcohol; an injection port for introducing the composition including at least one lower alcohol into the low pressure chemical vapor deposition apparatus; and a pump/vacuum system for removing crystallized TEOS material build-up from the low pressure chemical vapor deposition apparatus.
    Type: Grant
    Filed: February 2, 2001
    Date of Patent: December 24, 2002
    Assignee: Advanced Micro Devices, Inc.
    Inventors: Fuodoor Gologhlan, David Chi, Kent Kuohua Chang, Hector Serrato
  • Mesh filter design for LPCVD TEOS exhaust system
    Patent number: 6458212
    Abstract: One aspect of the present invention relates to a tetraethylorthosilicate chemical vapor deposition method, involving the steps of forming a film on a substrate using tetraethylorthosilicate in a chemical vapor deposition chamber; and removing tetraethylorthosilicate byproducts from the chemical vapor deposition chamber via a pump system and an exhaust line connected to the chemical vapor deposition chamber, the exhaust line comprising a mesh filter having a conical shape. Another aspect of the present invention relates to an exhaust system for removing tetraethylorthosilicate byproducts from a chemical vapor deposition chamber, containing an exhaust line connected to the chemical vapor deposition chamber, the exhaust line comprising a mesh filter having a conical shape via a pump system; and a pump system connected to the exhaust line for removing tetraethylorthosilicate byproducts from the processing chamber.
    Type: Grant
    Filed: March 31, 2000
    Date of Patent: October 1, 2002
    Assignee: Advanced Micro Devices, Inc.
    Inventors: Fuodoor Gologhlan, David Chi, Kent Kuohua Chang, Hector Serrato, Jayendra Bhakta
  • Method of in-situ cleaning for LPCVD teos pump
    Patent number: 6221164
    Abstract: In one embodiment, the present invention relates to a method of cleaning a low pressure chemical vapor deposition apparatus having TEOS material build-up therein involving contacting the low pressure chemical vapor deposition apparatus with a composition containing at least one lower alcohol. In another embodiment, the present invention relates to a system for cleaning a low pressure chemical vapor deposition apparatus having TEOS material build-up therein, containing a supply of a composition comprising at least one lower alcohol; an injection port for introducing the composition comprising at least one lower alcohol into the low pressure chemical vapor deposition apparatus; and a pump/vacuum system for removing crystallized TEOS material build-up from the low pressure chemical vapor deposition apparatus.
    Type: Grant
    Filed: January 25, 2000
    Date of Patent: April 24, 2001
    Assignee: Advanced Micro Devices, Inc.
    Inventors: Fuodoor Gologhlan, David Chi, Kent Kuohua Chang, Hector Serrato