Patents by Inventor Furen Wang

Furen Wang has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 6011981
    Abstract: An oxide superconducting multilayered thin film structure having a laminated layer structure of oxide superconductor thin film layers and non-superconductor thin film layers constituted by a combination of material groups for making strain free interfaces among both thin film layers. For example, an oxide superconductor multilayered film constituted by a laminated layer structure where thin films of an oxide superconductor represented by the chemical formula of M'Ba.sub.2 Cu.sub.3 O.sub.7-.delta. (M'; a rare earth element of Nd, Sm, Eu or the like or an alloy of these, .delta.; oxygen depletion amount) and thin films of an oxide represented by the chemical formula of M*Ba.sub.2 Cu.sub.3 O.sub.7-.delta. (M*; an element of Pr, Sc or the like or an alloy of these, .delta.; oxygen depletion amount) are alternately stacked. The oxide thin films are thin films fabricated by a pulsed laser deposition process or a sputtering process. A Josephson device can be provided by using the multilayered film.
    Type: Grant
    Filed: March 10, 1997
    Date of Patent: January 4, 2000
    Assignee: International Superconductivity Technology Center
    Inventors: Gustavo Alvarez, Furen Wang, Jian-Guo Wen, Naoki Koshizuka, Youichi Enomoto, Tadashi Utagawa, Shoji Tanaka
  • Patent number: 5837053
    Abstract: A single crystal material is prepared by forming a layer of an amorphous substance over a surface of a substrate of a single crystal having the same chemical composition as that of the amorphous substance, the resulting composite material is heated to epitaxially grow the amorphous layer into a single crystal layer. A composite material for producing such a single crystal material is also disclosed which includes a substrate of a single crystal, and a layer of an amorphous substance having the same chemical composition as that of the substrate, the layer having such a thickness that the layer as a whole can epitaxially grow to make a single crystal layer.
    Type: Grant
    Filed: November 28, 1995
    Date of Patent: November 17, 1998
    Assignee: International Superconductivity Technology Center
    Inventors: Furen Wang, Tadataka Morishita