Abstract: A light-emitting device comprises a substrate, electrical terminals disposed on a top side of the substrate, and a light-emitting semiconductor device disposed above the substrate. The light-emitting semiconductor device has a bottom side oriented to face toward the top side of the substrate. Electrodes are disposed on the bottom side of the light-emitting semiconductor device and electrically connected to the terminals on the substrate. A glass layer is arranged in a path of output light emitted by the light-emitting semiconductor device. The glass layer contains fluorescent material that converts at least a portion of the output light to converted light having a wavelength different from a wavelength of the output light. The fluorescent material may include SrS:Eu2+ that emits red light and (Sr, Ba, Ca)Ga2S4:Eu2+ that emits green light.

Abstract: A PWB (printed wiring board) 101 termed a “chip LED” is used instead of a lead frame. On the substrate is etched a lead 203 buried in the dielectric layer portion. Solder bumps 204 are formed on the PWB. SnPb, In, Au, Ag, or other materials may be used as solder. The gallium nitride semiconductor light-emitting element 102 is arranged this substrate—which includes the electrical wiring—and is connected with the leads thereof. Semiconductor light-emitting element 102 is arranged over bumps 204 and lead connections are made using the bumps, which are masses of metal situated in the electrode portions. Since the fluorescent material is sensitive to temperature, the production process is carried out at low temperature. The temperature is about 80° C. to 150° C. The fluorescent material is admixed into this glass sol-gel solution, which is then applied and heated to produce a glass body.