Abstract: The antireflection film includes a dielectric multilayer film arranged on the substrate side and a fine uneven layer containing an alumina hydrate as a main component and provided to be laminated on the dielectric multilayer film. The dielectric multilayer film includes alternating layers of layers of high refractive index having a relatively high refractive index and layers of low refractive index having a relatively low refractive index, the dielectric multilayer film includes a barrier layer containing silicon nitride as one of the layer of high refractive index and the layer of low refractive index, and the barrier layer has a density of 2.7 g/cm3 or more and a thickness of 15 nm or more and 150 nm or less.

Abstract: A laser module includes a semiconductor laser that emits laser light within a wavelength range of 350 to 450 nm, and hermetically sealing members, in which the semiconductor is sealed. The amount of organic adhesive utilized within the volume of the sealed sealing members is 1.0 g/ml or less, thereby causing a saturation concentration of outgas components generated from the adhesive to be less than 1000 ppm following a deaerating process. At least one optical component (e.g., a collimating lens) is adhesively fixed to a fixing member (e.g., a collimating lens holder) by inserting an adhesive composition including an alicyclic epoxy compound, a compound having an oxytanyl group, and a catalytic amount of an onium salt photoreaction initiator therebetween at an adhesive thickness of 0.05 ?m or greater and 5 ?m or less. Thereafter, the adhesive composition is cured by an activated energy beam to fix the optical component to the fixing member.

Abstract: In a laser module comprising a hermetically sealed container having inside a semiconductor laser device whose emission wavelength is 350˜450 nm, generation of organic volatile gas is suppressed in the container and life of the module is prolonged. In a laser module comprising a hermetically sealed container having inside a semiconductor laser device whose emission wavelength is 350˜450 nm, optical components whose organic volatile gas generation measured by GC/MS is 10 ?g/g or less at 150° C. are positioned in the container. In addition, as an organic adhesive to fix the optical components such as a collimating lens is used an organic adhesive whose organic volatile gas generation measured by GC/MS is 100 ?g/g or less at 150° C.

Abstract: (Problem to be solved) To provide a laser beam synthesizing apparatus which is small in size and high in output power. (Means for solving the problem) A convergent angle transforming optical system 30 is disposed further upstream of the upstream-most position Pa in the positions where the optical axes of beam bundles La, Lb, Lc . . . which are radiated from a plurality of semiconductor lasers 11A, 11B, 112C . . . and converged in the fast axis view by a converging/dispersion lens 120 intersect each other in the fast axis view, and the whole beam bundle made up of the beam bundles La, Lb, Lc . . . passed through the converging/dispersion lens 120 is converged in the fast axis view by the convergent angle transforming optical system 30 so that the angle of convergence of the whole beam bundle is made smaller in the fast axis view, and introduced into the core 41 of an optical fiber 40.

Abstract: In a laser module comprising a hermetically sealed container having inside a semiconductor laser device whose emission wavelength is 350˜450 nm, generation of organic volatile gas is suppressed in the container and life of the module is prolonged. In a laser module comprising a hermetically sealed container having inside a semiconductor laser device whose emission wavelength is 350˜450 nm and whose life is 5500 hours or more, optical components whose organic volatile gas generation measured by GC/MS is 10 ?g/g or less at 150° C. are positioned in the container. In addition, as an organic adhesive to fix the optical components such as a collimating lens is used an organic adhesive whose organic volatile gas generation measured by GC/MS is 300 ?g/g or less at 15° C.

Abstract: In a laser module, a laser beam which is emitted from a laser element is focused by a condensing optical system and caused to enter an incidence end of an optical fiber. A laser device is provided with a plurality of these laser modules. Emission end portions of the optical fibers are bundled to form a laser emission portion. A thickness of cladding h of each optical fiber is set to a value calculated in accordance with the following equation: cladding thickness ? ? h ? ( emission ? ? light ? ? amount of ? ? one ? ? laser ? ? module ? ? W required intensity ? ? C × packing ratio ? ? P - core diameter ? ? t ) ÷ 2 As a result, it is possible to emit a laser-beam with a high intensity that is required for functionality as a laser light source, for the purpose of raising resolution of an exposure apparatus.

Abstract: In a laser module, a laser beam which is emitted from a laser element is focused by a condensing optical system and caused to enter an incidence end of an optical fiber. A laser device is provided with a plurality of these laser modules. Emission end portions of the optical fibers are bundled to form a laser emission portion. A thickness of cladding h of each optical fiber is set to a value calculated in accordance with the following equation: cladding thickness ? ? ? h ? ( emission ? ? ? light ? ? ? amount of ? ? ? one ? ? ? laser ? ? ? module ? ? ? W required intensity ? ? ? C × packing ratio ? ? ? P - core diameter ? ? ? t ) ÷ 2 As a result, it is possible to emit a laser-beam with a high intensity that is required for functionality as a laser light source, for the purpose of raising resolution of an exposure apparatus.

Abstract: In a method for producing a laser element, a brazing material is placed between a nitride-based semiconductor laser bar and a fixation surface of a heat sink, where the brazing material contains gold and one of tin and silicon as main components, the nitride-based semiconductor laser bar has at least three light-emission points formed on a substrate, the heat sink is made of copper or copper alloy, and the fixation surface has a predetermined shape. Then, the nitride-based semiconductor laser bar is fixed to the fixation surface of the heat sink by melting and solidifying the brazing material while pressing the nitride-based semiconductor laser bar toward the heat sink with a tool having a shape corresponding to the predetermined shape of the fixation surface.

Abstract: In a disclosed laser module, a usage amount of organic adhesive is set to no more than 1.0 g/ml. Thus, an equilibrium density of outgas components from the adhesive after an air removal treatment is less than 1000 ppm. In another laser module, a heat sink at which a semiconductor laser element is adhered on a submount, an electrode terminal wire-connected with the laser element, a photodiode wire-connected with the electrode terminal, and a zeolite adsorbent are fixedly provided on a stem. These are ring-welded in a container in a dry air atmosphere (80% nitrogen, 20% oxygen). In still another laser module, sixteen multiplexed lasers are disposed in a container. The container is connected with an air circulation apparatus, which is provided with a filter for removing contaminants, a rotary pump for circulating inert gas, and a valve for controlling replenishment of the gas.

Abstract: In a laser apparatus, a plurality of semiconductor laser elements respectively emit laser beams; a multimode optical fiber has a light-entrance end and a light-emission end; an optical condensing system collects the laser beams emitted from the plurality of semiconductor laser elements, and couples the collected laser beams to the light-entrance end of the multimode optical fiber; and a protection member is arranged at the light-emission end of the multimode optical fiber, protects the light-emission end from the atmosphere, and has a light-emission window located at at least a predetermined distance from the light-emission end.

Abstract: A semiconductor laser element includes: a stack of layers having resonator facets; and at least one protection layer formed on at least one of the resonator facets. Each of the at least one protection layer includes at least first, second, and third sublayers. The first sublayer is formed nearest to the stack among the at least first, second, and third sublayers, and made of a material not containing oxygen (or nitrogen) as a constituent element. The second sublayer is made of an oxide (or nitride) produced by oxidizing (or nitriding) a portion of the first sublayer. The third sublayer is formed farthest from the stack among the at least first, second, and third sublayers, and made of an oxide (or nitride). The thickness d2 of the second sublayer and the total thickness d1 of the first and second sublayers satisfy a relationship, 0.1?d2/d1?0.9.

Abstract: A semiconductor laser element includes: a stack of layers having resonator facets; and at least one protection layer formed on at least one of the resonator facets. Each of the at least one protection layer includes at least first, second, and third sublayers. The first sublayer is formed nearest to the stack among the at least first, second, and third sublayers, and made of a material not containing oxygen (or nitrogen) as a constituent element. The second sublayer is made of an oxide (or nitride) produced by oxidizing (or nitriding) a portion of the first sublayer. The third sublayer is formed farthest from the stack among the at least first, second, and third sublayers, and made of an oxide (or nitride). The thickness d2 of the second sublayer and the total thickness d1 of the first and second sublayers satisfy a relationship, 0.1?d2/d1?0.9.

Abstract: An n-GaAs buffer layer, an n-AlGaAs lower cladding layer, an n- or i-InGaP lower optical waveguide layer, an InGaAsP quantum cell active layer, a p- or i-InGaP upper optical waveguide layer, a p-AlGaAs first upper cladding layer, a p- or i-InGaP etch-stopping layer, a p-AlGaAs second upper cladding layer, and a p-GaAs contact layer, are grown upon an n-GaAs substrate. A photoresist is coated on the wafer, and two grooves are formed by etching. Then, the photoresist on the perimeter of the device is removed and the contact layer is selectively etched. Next, the photoresist is lifted off. A SiO2 film is formed on the entire surface. After a window is formed in a portion of the SiO2 film corresponding to a ridge portion, a p-electrode is formed on a region of the SiO2 film other than the device perimeter.

Abstract: In a laser light multiplexing apparatus: a collimating optical system collimates light beams emitted from semiconductor lasers so that the slow axes of the light beams become coplanar, and optical axes of the light beams become parallel to each other; a light beam rearrangement optical system constituted by prisms respectively arranged in correspondence with the light beams rearranges the light beams in such a manner that directions of the fast axes of the light beams are changed at different locations along a direction in which the light beams propagate, and the fast axes of the light beams become coplanar; and a convergence optical system converges a bundle of the light beams rearranged by the light beam rearrangement optical system, in directions of the fast axes and the slow axes of the light beams, and makes the converged bundle of the light beams enter an optical fiber.

Abstract: An n-GaAs buffer layer, an n-AlGaAs lower cladding layer, an n- or i-InGaP lower optical waveguide layer, an InGaAsP quantum cell active layer, a p- or i-InGaP upper optical waveguide layer, a p-AlGaAs first upper cladding layer, a p- or i-InGaP etch-stopping layer, a p-AlGaAs second upper cladding layer, and a p-GaAs contact layer, are grown upon an n-GaAs substrate. A photoresist is coated on the wafer, and two grooves are formed by etching. Then, the photoresist on the perimeter of the device is removed and the contact layer is selectively etched. Next, the photoresist is lifted off. A SiO2 film is formed on the entire surface. After a window is formed in a portion of the SiO2 film corresponding to a ridge portion, a p-electrode is formed on a region of the SiO2 film other than the device perimeter.

Abstract: A laser module includes a semiconductor laser that emits laser light within a wavelength range of 350 to 450 nm, and hermetically sealing members, in which the semiconductor is sealed. The amount of organic adhesive utilized within the volume of the sealed sealing members is 1.0 g/ml or less, thereby causing a saturation concentration of outgas components generated from the adhesive to be less than 1000 ppm following a deaerating process. At least one optical component (e.g., a collimating lens) is adhesively fixed to a fixing member (e.g., a collimating lens holder) by inserting an adhesive composition including an alicyclic epoxy compound, a compound having an oxytanyl group, and a catalytic amount of an onium salt photoreaction initiator therebetween at an adhesive thickness of 0.05 ?m or greater and 5 ?m or less. Thereafter, the adhesive composition is cured by an activated energy beam to fix the optical component to the fixing member.

Abstract: In a laser module comprising a hermetically sealed container having inside a semiconductor laser device whose emission wavelength is 350˜450 nm, generation of organic volatile gas is suppressed in the container and life of the module is prolonged. In a laser module comprising a hermetically sealed container having inside a semiconductor laser device whose emission wavelength is 350˜450 nm, optical components whose organic volatile gas generation measured by GC/MS is 10 ?g/g or less at 150° C. are positioned in the container. In addition, as an organic adhesive to fix the optical components such as a collimating lens is used an organic adhesive whose organic volatile gas generation measured by GC/MS is 100 ?g/g or less at 150° C.

Abstract: In a laser module comprising a hermetically sealed container having inside a semiconductor laser device whose emission wavelength is 350˜450 nm, generation of organic volatile gas is suppressed in the container and life of the module is prolonged. In a laser module comprising a hermetically sealed container having inside a semiconductor laser device whose emission wavelength is 350˜450 nm and whose life is 5500 hours or more, optical components whose organic volatile gas generation measured by GC/MS is 10 ?g/g or less at 150° C. are positioned in the container. In addition, as an organic adhesive to fix the optical components such as a collimating lens is used an organic adhesive whose organic volatile gas generation measured by GC/MS is 300 ?g/g or less at 15° C.

Abstract: In a laser light multiplexing apparatus: a collimating optical system collimates light beams emitted from semiconductor lasers so that the slow axes of the light beams become coplanar, and optical axes of the light beams become parallel to each other; a light beam rearrangement optical system constituted by prisms respectively arranged in correspondence with the light beams rearranges the light beams in such a manner that directions of the fast axes of the light beams are changed at different locations along a direction in which the light beams propagate, and the fast axes of the light beams become coplanar; and a convergence optical system converges a bundle of the light beams rearranged by the light beam rearrangement optical system, in directions of the fast axes and the slow axes of the light beams, and makes the converged bundle of the light beams enter an optical fiber.

Abstract: In a laser module, a laser beam which is emitted from a laser element is focused by a condensing optical system and caused to enter an incidence end of an optical fiber. A laser device is provided with a plurality of these laser modules. Emission end portions of the optical fibers are bundled to form a laser emission portion.