Abstract: Described herein are polishing compositions comprising abrasive grains, an additive, and a water-soluble polymer, wherein the compositions have a pH of less than 4.

Abstract: A method is disclosed for polishing a wafer with a slurry. In the method, the wafer comprises at least one of silicon carbonitride (SiCN) and silicon nitride (SiN), and further comprises one or both of silicon dioxide (SiO2) and poly silicon, and a removal rate of SiCN is greater than a removal rate of poly silicon, and the removal rate of poly silicon is greater than a removal rate of SiO2, and where the slurry comprises up to about 15 wt % of surface-modified colloidal silica particles which have a primary particle size of less than about 35 nm, and the surface-modified colloidal silica particles comprise a plurality of acid moieties or salts thereof.

Abstract: A method is disclosed for polishing a wafer with a slurry. In the method, the wafer comprises at least one of silicon carbonitride (SiCN) and silicon nitride (SiN), and further comprises one or both of silicon dioxide (SiO2) and poly silicon, and a removal rate of SiCN is greater than a removal rate of poly silicon, and the removal rate of poly silicon is greater than a removal rate of SiO2, and where the slurry comprises up to about 15 wt % of surface-modified colloidal silica particles which have a primary particle size of less than about 35 nm, and the surface-modified colloidal silica particles comprise a plurality of acid moieties or salts thereof.

Abstract: A polishing composition used for chemical mechanical planarization of a substrate containing a noble metal layer is provided. The polishing composition contains positively-charged abrasive particles such as alpha-Al2O3 particles, theta-Al2O3 particles, delta-Al2O3 particles, gamma-Al2O3 particles, fumed Al2O3 particles, aluminum-modified SiO2 particles, organosilane-modified SiO2 particles, CeO2 particles, TiO2 particles, and ZrO2 particles, an inorganic salt such as KCl, RbCl, CsCl, MgCl2, CaCl2, SrCl2, BaCl2, and NH4Cl, an oxidizing agent such as H2O2, an inorganic acid such as HCl, and water.