Abstract: In a three-dimensional memory device, an interconnect structure is formed over a substrate and a first deck is formed over the interconnect structure. The first deck includes alternating first insulating layers and first word line layers, and a first channel structure extending through the first stack. The first channel structure has a first channel dielectric region and a first channel layer. The first channel dielectric region is formed along sidewalls of the first channel structure, positioned over a top surface of the interconnect structure, and in contact with the first insulating layers and the first word line layers. The first channel layer is formed along the first channel dielectric region, and includes a rounded projection that extends away from the top surface of the interconnect structure, extends outwards into the first stack at an interface of the interconnect structure, the first channel structure and the first stack.

Abstract: In a three-dimensional memory device, an interconnect structure is formed over a substrate and a first deck is formed over the interconnect structure. The first deck includes alternating first insulating layers and first word line layers, and a first channel structure extending through the first stack. The first channel structure has a first channel dielectric region and a first channel layer. The first channel dielectric region is formed along sidewalls of the first channel structure, positioned over a top surface of the interconnect structure, and in contact with the first insulating layers and the first word line layers. The first channel layer is formed along the first channel dielectric region, and includes a rounded projection that extends away from the top surface of the interconnect structure, extends outwards into the first stack at an interface of the interconnect structure, the first channel structure and the first stack.

Abstract: Embodiments of 3D memory structures and methods for forming the same are disclosed. The fabrication method includes forming multiple openings in staircase regions, periphery device regions, and substrate contact regions of a 3D NAND memory device. The openings can be formed by a photolithography process followed by multiple etching processes. The openings can include complete openings that expose the underlying layer and mid-way openings where a remaining portion of the photoresist still exists between the opening and the underlying layer. The remaining portion of the photoresist can delay the etching process in the shorter openings for the upper level staircase structure during the formation of the deeper openings for the lower level staircase structure. Conductive material is deposited into the openings to form contact structures for structures such as substrate contact pads, upper and lower level staircase structures, and/or peripheral devices.

Abstract: In a three-dimensional memory device, an interconnect structure is formed over a substrate and a first deck is formed over the interconnect structure. The first deck includes alternating first insulating layers and first word line layers, and a first channel structure extending through the first stack. The first channel structure has a first channel dielectric region and a first channel layer. The first channel dielectric region is formed along sidewalls of the first channel structure, positioned over a top surface of the interconnect structure, and in contact with the first insulating layers and the first word line layers. The first channel layer is formed along the first channel dielectric region, and includes a rounded projection that extends away from the top surface of the interconnect structure, extends outwards into the first stack at an interface of the interconnect structure, the first channel structure and the first stack.

Abstract: In a memory device, a lower memory cell string is formed over a substrate to include a first channel structure, a plurality of first word line layers and first insulating layers. The first channel structure protrudes from the substrate and passes through the first word line layers and first insulating layers. An inter deck contact is formed over the lower memory cell string and connected with the first channel structure. An upper memory cell string is formed over the inter deck contact. The upper memory cell string includes a second channel structure, a plurality of second word lines and second insulating layers. The second channel structure passes through the second word lines and second insulating layers, and extends to the inter deck contact, and further extends laterally into the second insulating layers. A channel dielectric region of the second channel structure is above the inter deck contact.

Abstract: Embodiments of 3D memory structures and methods for forming the same are disclosed. The fabrication method includes forming multiple openings in staircase regions, periphery device regions, and substrate contact regions of a 3D NAND memory device. The openings can be formed by a photolithography process followed by multiple etching processes. The openings can include complete openings that expose the underlying layer and mid-way openings where a remaining portion of the photoresist still exists between the opening and the underlying layer. The remaining portion of the photoresist can delay the etching process in the shorter openings for the upper level staircase structure during the formation of the deeper openings for the lower level staircase structure. Conductive material is deposited into the openings to form contact structures for structures such as substrate contact pads, upper and lower level staircase structures, and/or peripheral devices.

Abstract: A method of measuring hydrophobic contaminants in a pulp slurry or a papermaking system includes the steps of providing an aqueous paper mill sample, filtering the aqueous paper mill sample to produce a filtrate comprising particles, and collecting an image of the particles in a measured volume of the filtrate. The method also includes the steps of analyzing the image to determine a size and morphology of the particles in the measured volume of filtrate, identifying spherical particles having a size of from about 1 micron to about 20 microns in the measured volume of filtrate, and quantifying a number of the spherical particles having the size of from about 1 micron to about 20 microns in the measured volume of filtrate. This method is useful for papermakers for deposition diagnostics, prevention, and contaminant control treatment optimization.

Abstract: Embodiments of 3D memory devices with a semiconductor plug protected by a dielectric layer and methods for forming the same are disclosed. In an example, a 3D memory device includes a substrate, a memory stack including a plurality of interleaved conductor layers and dielectric layers on the substrate, and a memory string extending vertically through the memory stack. The memory string includes a semiconductor plug in a lower portion of the memory string, a protective dielectric layer on the semiconductor plug, and a memory film above the protective dielectric layer and along a sidewall of the memory string.

Abstract: Embodiments of 3D memory devices with a semiconductor plug protected by a dielectric layer and methods for forming the same are disclosed. In an example, a 3D memory device includes a substrate, a memory stack including a plurality of interleaved conductor layers and dielectric layers on the substrate, and a memory string extending vertically through the memory stack. The memory string includes a semiconductor plug in a lower portion of the memory string, a protective dielectric layer on the semiconductor plug, and a memory film above the protective dielectric layer and along a sidewall of the memory string.

Abstract: In a memory device, a lower memory cell string is formed over a substrate to include a first channel structure, a plurality of first word line layers and first insulating layers. The first channel structure protrudes from the substrate and passes through the first word line layers and first insulating layers. An inter deck contact is formed over the lower memory cell string and connected with the first channel structure. An upper memory cell string is formed over the inter deck contact. The upper memory cell string includes a second channel structure, a plurality of second word lines and second insulating layers. The second channel structure passes through the second word lines and second insulating layers, and extends to the inter deck contact, and further extends laterally into the second insulating layers. A channel dielectric region of the second channel structure is above the inter deck contact.

Abstract: A method of measuring hydrophobic contaminants in a pulp slurry or a papermaking system includes the steps of providing an aqueous paper mill sample, filtering the aqueous paper mill sample to produce a filtrate comprising particles, and collecting an image of the particles in a measured volume of the filtrate. The method also includes the steps of analyzing the image to determine a size and morphology of the particles in the measured volume of filtrate, identifying spherical particles having a size of from about 1 micron to about 20 microns in the measured volume of filtrate, and quantifying a number of the spherical particles having the size of from about 1 micron to about 20 microns in the measured volume of filtrate. This method is useful for papermakers for deposition diagnostics, prevention, and contaminant control treatment optimization.

Abstract: A method of increasing the drainage performance of a pulp slurry during the manufacture of paper products by adding (a) at least one microfibrillated cellulose and (b) at least one associative polymer or at least one branched or crosslinked copolymer to the pulp slurry. This addition occurs before the dewatering step where the pulp slurry is formed into a fibrous mat.

Abstract: A method of increasing the drainage performance of a pulp slurry during the manufacture of paper products by adding (a) at least one microfibrillated cellulose and (b) at least one associative polymer or at least one branched or crosslinked copolymer to the pulp slurry. This addition occurs before the dewatering step where the pulp slurry is formed into a fibrous mat.

Abstract: The current apparatus and method relate to a process for determining the amount and type of organic contaminants in industrial process fluids. The current process enables an industrial plant to quickly analyze the process fluid and thus control the amount of deposition that takes place on the surfaces of equipment in contact with the process fluid.

Abstract: The invention relates to a stable aqueous slurry composition comprising clay or clay-like material, hydrophobically associative polymer, and optionally a surfactant; and a method of inhibiting the deposition of organic contaminants in pulp and papermaking applications.

Abstract: A method for inhibiting resinous and sticky substances from filling or forming deposits on or within papermaking forming wire, by applying to said wire an effective inhibiting amount of a composition comprising at least one cationic agent selected from the group consisting of (a) cationic polyureas, (b) hydrophobically modified cationic polymers, (c) alkylammonium or/and alkylimidazolium salts, and optionally at least one nonionic amphiphilic copolymer selected from (i) hydrophobically modified polyethylene glycols], (ii) hydrophobically modified cellulose ethers, (iii) copolymers of vinyl alcohol and vinyl alkonate, (iv) polyoxyalkylene block copolymers, and (v) hydrophilically modified polydimethylsiloxanes.

Abstract: A method for inhibiting resinous and sticky substances from filling or forming deposits on or within papermaking forming wire, by applying to said wire an effective inhibiting amount of a composition comprising at least one cationic agent selected from the group consisting of (a) cationic polyureas, (b) hydrophobically modified cationic polymers, (c) alkylammonium or/and alkylimidazolium salts, and optionally at least one nonionic amphiphilic copolymer selected from (i) hydrophobically modified polyethylene glycols], (ii) hydrophobically modified cellulose ethers, (iii) copolymers of vinyl alcohol and vinyl alkonate, (iv) polyoxyalkylene block copolymers, and (v) hydrophilically modified polydimethylsiloxanes.

Abstract: The invention relates to a stable aqueous slurry composition comprising clay or clay-like material, hydrophobically associative polymer, and optionally a surfactant; and a method of inhibiting the deposition of organic contaminants in pulp and papermaking applications.

Abstract: A papermaking method and a composition which utilize, as a drainage aid, a water-soluble anionic copolymer prepared via a water-in-oil polymerization technique that, absent a cross-linking agent, is characterized by a Huggins' constant (k?) determined in 0.01M NaCl greater than 0.75 and a storage modulus (G?) for a 1.5 wt. % actives polymer solution at 4.6 Hz greater than 175 Pa.

Abstract: A papermaking method and a composition which utilize, as a drainage aid, a water-soluble anionic copolymer prepared via a water-in-oil polymerization technique that, absent a cross-linking agent, is characterized by a Huggins' constant (k?) determined in 0.01M NaCl greater than 0.75 and a storage modulus (G?) for a 1.5 wt. % actives polymer solution at 4.6 Hz greater than 175 Pa.