Abstract: The present invention provides a crystalline quality evaluation apparatus (1) and a crystalline quality evaluation method for thin-film semiconductors, which are designed to evaluate crystalline quality of a sample (2) of a thin-film semiconductor (2a) by emitting excitation light and an electromagnetic wave to irradiate a measurement site of the sample (2), and detecting an intensity of a reflected electromagnetic wave from the sample (2). In the present invention, the thin-film semiconductor (2a) of the sample (2) is formed on an electrically conductive film (2b), and a dielectric (3) transparent to the excitation light is additionally disposed between the sample (2) and a waveguide (13) for emitting the electromagnetic wave therefrom.

Abstract: The present invention provides a crystalline quality evaluation apparatus (1) and a crystalline quality evaluation method for thin-film semiconductors, which are designed to evaluate crystalline quality of a sample (2) of a thin-film semiconductor (2a) by emitting excitation light and an electromagnetic wave to irradiate a measurement site of the sample (2), and detecting an intensity of a reflected electromagnetic wave from the sample (2). In the present invention, the thin-film semiconductor (2a) of the sample (2) is formed on an electrically conductive film (2b), and a dielectric (3) transparent to the excitation light is additionally disposed between the sample (2) and a waveguide (13) for emitting the electromagnetic wave therefrom.

Abstract: In addition to microwave and excitation light, bias light as well is irradiated upon a surface of a semiconductor sample that is passivated using a solution which contains an electrolyte. Irradiation of the bias light increases the quantity of ionic substances that exist in the solution, largely changes a surface potential of the semiconductor sample, and suppresses surface recombination. This makes it possible to measure the lifetime of carriers which exist within the semiconductor sample at a high accuracy, without influenced by surface recombination.

Abstract: An apparatus for measuring the life time of minority carriers includes a light source for irradiating a first region of a semiconductor wafer, a microwave generator for generating microwaves, a transmission line for transmitting a first part of the generated mark raised to the region of the semiconductor wafer that is radiated by the excitation light and a second portion of the generated microwave to a region of the semiconductor wafer that is not radiated by the excitation light. The intensity of the microwave signals reflected from the semiconductor wafer are detected and the life time of the minority carriers is calculated based upon the detected intensities.