Abstract: A semiconductor device includes a first main electrode on a first main surface of the semiconductor substrate, and a second main electrode on a second main surface thereof, the first main surface including a control electrode; a first outer electrode and a second outer electrode provided on the first and second main surface, respectively, wherein the first and second outer electrodes are respectively connected to the first main electrode and the second main electrode; an external control electrode adapted for connection to the control electrode on the semiconductor substrate; an access electrode whereby the control electrode on the substrate is connected to the external; the control electrode access electrode including a ring-shaped body having a contact section on the undersurface thereof, and a lead for connection to the external control electrode, wherein the ring-shaped body is covered with an insulating film in the portion excluding the contact section, and wherein the ring-shaped body is kept in contact