Patents by Inventor Fuw-Iuan Hshieh

Fuw-Iuan Hshieh has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Junction barrier schottky with low forward drop and improved reverse block voltage
    Patent number: 7397102
    Abstract: This invention discloses a junction barrier Schottky device supported on a substrate that has a first conductivity type. The Schottky device includes a first diffusion region of a first conductivity type for functioning as a forward barrier height reduction region. The Schottky device further includes a second diffusion region of a second conductivity type disposed immediately adjacent to the first diffusion region for functioning as a backward blocking enhancement region to reduce the backward leakage current.
    Type: Grant
    Filed: April 20, 2005
    Date of Patent: July 8, 2008
    Assignee: Taurus Micropower, Inc.
    Inventors: Fuw-Iuan Hshieh, Brian Pratt
  • Junction barrier schottky with low forward drop and improved reverse block voltage
    Publication number: 20060237813
    Abstract: This invention discloses a junction barrier Schottky device supported on a substrate that has a first conductivity type. The Schottky device includes a first diffusion region of a fist conductivity type for functioning as a forward barrier height reduction region. The Schottky device further includes a second diffusion region of a second conductivity type disposed immediately adjacent to the first diffusion region for functioning as a backward blocking enhancement region to reduce the backward leakage current.
    Type: Application
    Filed: April 20, 2005
    Publication date: October 26, 2006
    Inventors: Fuw-Iuan Hshieh, Brian Pratt