Patents by Inventor Fuwan Gan

Fuwan Gan has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Temperature-insensitive Mach-Zehnder interferometer
    Patent number: 11796738
    Abstract: The present invention provides a temperature-insensitive Mach-Zehnder interferometer, including: a first mode converter; a second mode converter, located on one side of the first mode converter and with a distance from the first mode converter; and a connecting arm, located between the first mode converter and the second mode converter, one end of the connecting arm is connected with the first mode converter, and the other end is connected with the second mode converter. The connecting arm includes a straight waveguide connecting arm. The temperature-insensitive Mach-Zehnder interferometer of the present invention can be configured to be insensitive to temperature by adjusting parameters such as the width and thickness of the connecting arm.
    Type: Grant
    Filed: January 3, 2019
    Date of Patent: October 24, 2023
    Assignee: SHANGHAI INSTITUTE OF MICROSYSTEM AND INFORMATION TECHNOLOGY, CHINESE ACADEMY OF SCIENCES
    Inventors: Chao Qiu, Yingxuan Zhao, Fuwan Gan, Aimin Wu, Zhen Sheng, Wei Li
  • TEMPERATURE-INSENSITIVE MACH-ZEHNDER INTERFEROMETER
    Publication number: 20220120973
    Abstract: The present invention provides a temperature-insensitive Mach-Zehnder interferometer, including: a first mode converter; a second mode converter, located on one side of the first mode converter and with a distance from the first mode converter; and a connecting arm, located between the first mode converter and the second mode converter, one end of the connecting arm is connected with the first mode converter, and the other end is connected with the second mode converter. The connecting arm includes a straight waveguide connecting arm. The temperature-insensitive Mach-Zehnder interferometer of the present invention can be configured to be insensitive to temperature by adjusting parameters such as the width and thickness of the connecting arm.
    Type: Application
    Filed: January 3, 2019
    Publication date: April 21, 2022
    Applicant: SHANGHAI INSTITUTE OF MICROSYSTEM AND INFORMATION TECHNOLOGY, CHINESE ACADEMY OF SCIENCES
    Inventors: Chao QIU, Yingxuan ZHAO, Fuwan GAN, Aimin WU, Zhen SHENG, Wei LI
  • Semiconductor photodetectors
    Patent number: 8257997
    Abstract: In one aspect, a method includes forming a pit in a top surface of a substrate by removing a portion of the substrate and growing a semiconductor material with a bottom surface on the pit, the semiconductor material different than the material of the substrate. The pit has a base recessed in the top surface of the substrate. In another aspect, a structure includes a substrate having a top surface, the substrate including at least one pit having a base lower than the top surface of the substrate, and a semiconductor material having a bottom surface formed on the base of the pit.
    Type: Grant
    Filed: October 17, 2008
    Date of Patent: September 4, 2012
    Assignee: Sifotonics Technologies (USA) Inc.
    Inventors: Liang Chen, Chingyin Hong, Fuwan Gan, Dong Pan
  • System and method for providing a high frequency response silicon photodetector
    Patent number: 7880204
    Abstract: A Silicon photodetector contains an insulating substrate having a top surface and a bottom surface. A Silicon layer is located on the top surface of the insulating substrate, where the Silicon layer contains a center region, the center region being larger in thickness than the rest of the Silicon layer. A top Silicon dioxide layer is located on a top surface of the center region. A left wing of the center region and a right wing of the center region are doped. The Silicon photodetector also has an active region located within the center region, where the active region contains a tailored crystal defect-impurity combination and Oxygen atoms.
    Type: Grant
    Filed: October 2, 2006
    Date of Patent: February 1, 2011
    Assignee: Massachusetts Institute of Technology
    Inventors: Michael W. Geis, Steven J. Spector, Donna M. Lennon, Matthew E. Grein, Robert T. Schulein, Jung U. Yoon, Franz Xaver Kaertner, Fuwan Gan, Theodore M. Lyszczarz
  • System and method for providing a high frequency response silicon photodetector
    Publication number: 20100025787
    Abstract: A Silicon photodetector contains an insulating substrate having a top surface and a bottom surface. A Silicon layer is located on the top surface of the insulating substrate, where the Silicon layer contains a center region, the center region being larger in thickness than the rest of the Silicon layer. A top Silicon dioxide layer is located on a top surface of the center region. A left wing of the center region and a right wing of the center region are doped. The Silicon photodetector also has an active region located within the center region, where the active region contains a tailored crystal defect-impurity combination and Oxygen atoms.
    Type: Application
    Filed: October 2, 2006
    Publication date: February 4, 2010
    Applicant: Massachusetts Institute of Technology
    Inventors: Michael W. Geis, Steven J. Spector, Donna M. Lennon, Matthew E. Grein, Robert T. Schulein, Jung U. Yoon, Franz Xaver Kaertner, Fuwan Gan, Theodore M. Lyszczarz
  • SEMICONDUCTOR PHOTODETECTORS
    Publication number: 20090101909
    Abstract: In one aspect, a method includes forming a pit in a top surface of a substrate by removing a portion of the substrate and growing a semiconductor material with a bottom surface on the pit, the semiconductor material different than the material of the substrate. The pit has a base recessed in the top surface of the substrate. In another aspect, a structure includes a substrate having a top surface, the substrate including at least one pit having a base lower than the top surface of the substrate, and a semiconductor material having a bottom surface formed on the base of the pit.
    Type: Application
    Filed: October 17, 2008
    Publication date: April 23, 2009
    Applicant: Nano Photonics, Inc.
    Inventors: Liang Chen, Chingyin Hong, Fuwan Gan, Dong Pan
  • High-speed electronic carrier-injection modulator based on high-index-contrast Si-waveguide
    Patent number: 7369714
    Abstract: An opto-electronic modulator includes a Mach-Zehnder structure that comprises p+in+-diodes in both arms of the Mach-Zehnder structure. The Mach-Zehnder structure is formed by waveguides so as to confine an optical mode in the opto-electronic modulator.
    Type: Grant
    Filed: May 3, 2005
    Date of Patent: May 6, 2008
    Assignee: Massachusetts Institute of Technology
    Inventors: Fuwan Gan, Franz X. Kaertner
  • High-speed electronic carrier-injection modulator based on high-index-contrast Si-waveguide
    Publication number: 20050271315
    Abstract: An opto-electronic modulator includes a Mach-Zehnder structure that comprises p+in+-diodes in both arms of the Mach-Zehnder structure. The Mach-Zehnder structure is formed by waveguides so as to confine an optical mode in the opto-electronic modulator.
    Type: Application
    Filed: May 3, 2005
    Publication date: December 8, 2005
    Inventors: Fuwan Gan, Franz Kaertner