Abstract: A preparation method of a bismuth oxide film and a reconfigurable photoelectric logic gate are provided. It is discovered for the first time that an open-circuit photovoltage of bismuth oxide varies non-monotonically with a light intensity. A reconfigurable photoelectric logic gate is designed and manufactured by using the unique property of bismuth oxide. By adjusting an input light intensity, various logic gates such as an XOR gate, an AND gate, a NAND gate, an OR gate, a NOR gate, a NOT gate, and an AND-NOT gate can be programmably reconfigured by using a single device, without changing a threshold condition. Compared with a conventional electronic logic gate, a photoelectric logic gate having the characteristic of flexible and diversified programmable reconfigurations can implement more complex operation and calculation with fewer components, thereby being expected to play an important role in the upcoming Internet of Things era in which information increases explosively.

Abstract: A method for preparing bismuth oxide nanowire films by heating in an upside down position includes: washing a substrate, and fixing the substrate to a substrate support in a magnetron sputtering system in a position where an electrically conductive surface of the substrate faces downwards; placing a bismuth target, which is adhered to a copper backing plate, on a sputtering head in the magnetron sputtering system; performing direct current magnetron sputtering to form a bismuth film on the electrically conductive surface of the substrate; and regulating a heating temperature to maintain the bismuth film in a semi-molten state, and providing a predetermined oxygen gas concentration to form the bismuth oxide nanowire film.

Abstract: A method for synthesizing an intergrown twin Ni2Mo6S6O2/MoS2 two-dimensional nanosheet with exposed (00L) crystal planes is disclosed. An Ni—Mo bonded precursor is formed by using an ion insertion method to restrict Ni ions to be located in a lattice matrix of a Mo-based compound; a dinuclear metal sulfide Ni2Mo6S6O2 is formed by precisely adjusting and controlling a concentration of a sulfur atmosphere and utilizing a reconstruction effect of Ni element in the lattice matrix of the Mo-based compound; and meanwhile, a growth direction of Ni2Mo6S6O2 is precisely adjusted and controlled by using a method for growing a single crystal in a limited area, so that Ni2Mo6S6O2 is grown, taking a single crystal MoS2 as a growth template, with the single crystal MoS2 alternately along a crystal plane (110) of the single crystal MoS2, so as to form a twin Ni2Mo6S6O2/MoS2 two-dimensional nanosheet in which Ni2Mo6S6O2 and MoS2 are intergrown.

Abstract: A method for synthesizing an intergrown twin Ni2Mo6S6O2/MoS2 two-dimensional nanosheet with exposed (00L) crystal planes is disclosed. An Ni-Mo bonded precursor is formed by using an ion insertion method to restrict Ni ions to be located in a lattice matrix of a Mo-based compound; a dinuclear metal sulfide Ni2Mo6S6O2 is formed by precisely adjusting and controlling a concentration of a sulfur atmosphere and utilizing a reconstruction effect of Ni element in the lattice matrix of the Mo-based compound; and meanwhile, a growth direction of Ni2Mo6S6O2 is precisely adjusted and controlled by using a method for growing a single crystal in a limited area, so that Ni2Mo6S6O2 is grown, taking a single crystal MoS2 as a growth template, with the single crystal MoS2 alternately along a crystal plane (110) of the single crystal MoS2, so as to form a twin Ni2Mo6S6O2/MoS2 two-dimensional nanosheet in which Ni2Mo6S6O2and MoS2 are intergrown.

Abstract: A CuV2O6-based photoelectric sensor is prepared through the following steps: acquiring a CuV2O6 thin film through a direct-current reactive magnetron co-sputtering method; and loading an 8-hydroxyquinoline solution on the CuV2O6 thin film through a spin-coating method to acquire an 8-hydroxyquinoline-modified CuV2O6 photoelectric sensor. The 8-hydroxyquinoline-modified CuV2O6 photoelectric sensor has a good anti-interference capability in the detection of arginine; it is easy to realize the low-cost mass production of CuV2O6 photoelectrodes through a developed direct-current reactive magnetron sputtering coating method; and a sensor device is low in cost, simple, portable, and easy to use, and has an application value in food safety and health and hygiene detection.

Abstract: A method for preparing bismuth oxide nanowire films by heating in an upside down position includes: washing a substrate, and fixing the substrate to a substrate support in a magnetron sputtering system in a position where an electrically conductive surface of the substrate faces downwards; placing a bismuth target, which is adhered to a copper backing plate, on a sputtering head in the magnetron sputtering system; performing direct current magnetron sputtering to form a bismuth film on the electrically conductive surface of the substrate; and regulating a heating temperature to maintain the bismuth film in a semi-molten state, and providing a predetermined oxygen gas concentration to form the bismuth oxide nanowire film.