Abstract: A light-emitting diode includes a semiconductor epitaxial structure which includes a first semiconductor layer, an active layer, and a second semiconductor layer that are stacked in sequence. The second semiconductor layer includes a current spreading layer, which includes a first doped layer doped with a first p-type impurity, a second doped layer doped with the first p-type impurity and a second p-type impurity, and a third doped layer doped with the second p-type impurity. A concentration of the first p-type impurity in the first doped layer is less than or equal to a concentration of the first p-type impurity in the second doped layer. A concentration of the second p-type impurity in the third doped layer is greater than a concentration of the second p-type impurity in the second doped layer. A light-emitting device including the aforesaid light-emitting diode is also provided.

Abstract: A light-emitting device includes a semiconductor epitaxial unit having a first surface and a second surface that are opposite to each other, and including a first semiconductor layer, an active layer, and a second semiconductor layer that are disposed sequentially in such order in a direction from the first surface to the second surface. The active layer includes a quantum well structure that has n periodic units, each of which includes a well layer and a barrier layer that are sequentially disposed. The second semiconductor layer includes a cladding layer and a current spreading layer. A ratio of a thickness of the current spreading layer to a current density of the light-emitting device ranges from 0.6 to 4. A light-emitting apparatus is also provided in the disclosure.

Abstract: A light-emitting device includes: an epitaxial structure having a first surface and a second surface opposite to the first surface, and including a first type semiconductor layered unit that includes a first type window layer and a first type ohmic contact layer disposed at one side of the first type window layer; an active layer; and a second type semiconductor layered unit. The first type window layer is disposed between the first type ohmic contact layer and the active layer. The first type ohmic contact layer contains a material represented by Alx1Gay1InP, where 0?x1?1, 0?y1?1. The first type window layer contains a material represented by Alx2Gay2InP, where 0<x2?1, 0?y2?1. The first type ohmic contact layer has an Al content lower than an Al content of the first type window layer. A light-emitting apparatus that includes a light-emitting device according to the disclosure is also disclosed.