Patents by Inventor Fuyuma ITO

Fuyuma ITO has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • SUBSTRATE TREATMENT APPARATUS AND SUBSTRATE TREATMENT METHOD
    Publication number: 20180265989
    Abstract: According to an embodiment, a substrate treatment apparatus includes a noble metal-containing member having a concave-convex surface including a noble metal, and a liquid chemical supply member to supply a liquid chemical. While convex portions of the concave-convex surface are contact with a predetermined surface of a metal, the liquid chemical is supplied onto the surface of the metal to remove the metal with etching.
    Type: Application
    Filed: September 11, 2017
    Publication date: September 20, 2018
    Applicant: TOSHIBA MEMORY CORPORATION
    Inventors: Yasuhito YOSHIMIZU, Yuya AKEBOSHI, Fuyuma ITO, Hakuba KITAGAWA
  • Semiconductor device manufacture method
    Patent number: 9991159
    Abstract: According to some embodiments, a semiconductor device manufacturing method includes forming a sacrificial film on a material film. The method includes processing the sacrificial film, and forming a first groove in the sacrificial film having a first width and a second groove in the sacrificial film having a second width larger than the first width, the material film defining a base of the first groove and a base of the second groove. The method includes forming a catalyst layer on the sacrificial film, and on the base of the first groove and the base of the second groove. The method includes forming a first metal film having a thickness equal to or larger than half the first width and smaller than half the second width on the catalyst layer by plating. The method includes removing at least a portion of the first metal film in the second groove while leaving a portion of the first metal film in the first groove unremoved.
    Type: Grant
    Filed: March 3, 2017
    Date of Patent: June 5, 2018
    Assignee: TOSHIBA MEMORY CORPORATION
    Inventors: Fuyuma Ito, Yasuhito Yoshimizu, Yuya Akeboshi, Hisashi Okuchi, Masayuki Kitamura
  • SEMICONDUCTOR DEVICE MANUFACTURING METHOD
    Publication number: 20180082893
    Abstract: According to some embodiments, a semiconductor device manufacturing method includes forming a sacrificial film on a material film. The method includes processing the sacrificial film, and forming a first groove in the sacrificial film having a first width and a second groove in the sacrificial film having a second width larger than the first width, the material film defining a base of the first groove and a base of the second groove. The method includes forming a catalyst layer on the sacrificial film, and on the base of the first groove and the base of the second groove. The method includes forming a first metal film having a thickness equal to or larger than half the first width and smaller than half the second width on the catalyst layer by plating. The method includes removing at least a portion of the first metal film in the second groove while leaving a portion of the first metal film in the first groove unremoved.
    Type: Application
    Filed: March 3, 2017
    Publication date: March 22, 2018
    Applicant: TOSHIBA MEMORY CORPORATION
    Inventors: Fuyuma ITO, Yasuhito YOSHIMIZU, Yuya AKEBOSHI, Hisashi OKUCHI, Masayuki KITAMURA