Patents by Inventor Fwa-Iuan Hshieh

Fwa-Iuan Hshieh has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 7960787
    Abstract: A semiconductor power device formed on a semiconductor substrate of a first conductivity type wherein the semiconductor power device includes trench gates surrounded by body regions of a second conductivity type encompassing source regions of the first conductivity type therein. The semiconductor power device further includes trench contact structure having a plurality of trench contacts with trenches extended into the body regions for as source-body contacts and extended into the trench gates as gate contact. The semiconductor power device further includes a termination area wherein a plurality of the trench gate contacts are electrically connected to the source-body contacts.
    Type: Grant
    Filed: November 7, 2008
    Date of Patent: June 14, 2011
    Assignee: Force-MOS Technology Corporation
    Inventor: Fwa-Iuan Hshieh
  • Publication number: 20100117145
    Abstract: A semiconductor power device formed on a semiconductor substrate of a first conductivity type wherein the semiconductor power device includes trench gates surrounded by body regions of a second conductivity type encompassing source regions of the first conductivity type therein. The semiconductor power device further includes trench contact structure having a plurality of trench contacts with trenches extended into the body regions for as source-body contacts and extended into the trench gates as gate contact. The semiconductor power device further includes a termination area wherein a plurality of the trench gate contacts are electrically connected to the source-body contacts.
    Type: Application
    Filed: November 7, 2008
    Publication date: May 13, 2010
    Inventor: Fwa-Iuan Hshieh