Patents by Inventor Fwzah Hamud ALSHAMMARI

Fwzah Hamud ALSHAMMARI has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Single material electronic device and method of producing such an electronic device
    Patent number: 10964822
    Abstract: A semiconductor device includes a substrate, a gate arranged on the substrate, a dielectric arranged on the gate, a channel arranged on the dielectric, a source electrically coupled to the channel, and a drain electrically coupled to the channel. Each of the gate, dielectric, channel, source, and drain includes a corresponding mixture of hafnium dioxide (HfCte) and zinc oxide (ZnO) layers and at least two of the gate, dielectric, channel, source, and drain comprise different mixtures of the hafnium dioxide and zinc oxide layers.
    Type: Grant
    Filed: June 15, 2018
    Date of Patent: March 30, 2021
    Assignee: KING ABDULLAH UNIVERSITY OF SCIENCE AND TECHNOLOGY
    Inventors: Fwzah Hamud Alshammari, Husam Niman Alshareef
  • SINGLE MATERIAL ELECTRONIC DEVICE AND METHOD OF PRODUCING SUCH AN ELECTRONIC DEVICE
    Publication number: 20200176605
    Abstract: A semiconductor device includes a substrate, a gate arranged on the substrate, a dielectric arranged on the gate, a channel arranged on the dielectric, a source electrically coupled to the channel, and a drain electrically coupled to the channel. Each of the gate, dielectric, channel, source, and drain includes a corresponding mixture of hafnium dioxide (HfCte) and zinc oxide (ZnO) layers and at least two of the gate, dielectric, channel, source, and drain comprise different mixtures of the hafnium dioxide and zinc oxide layers.
    Type: Application
    Filed: June 15, 2018
    Publication date: June 4, 2020
    Inventors: Fwzah Hamud ALSHAMMARI, Husam Niman ALSHAREEF