Abstract: A method of forming a metal pattern includes depositing a metal material over a photosensitive, insulative material and into a trench positioned over a bond pad. A photoresist material having a substantially planar surface may be formed over the metal material. A portion of the photoresist material may be etched to expose the metal material outside of the trench. The metal material may be isotropically etched to leave sidewalls of the metal protruding above surfaces of the photosensitive, insulative material outside of the trench. Some methods include removing a portion of a dielectric material to form at least one trench. Metal material and photoresist material may be deposited over the trench. A portion of the photoresist material may be etched to expose areas of the metal material. The metal material may be etched to form sidewalls of the metal material that protrude above the dielectric material.

Abstract: A method of forming a metal pattern includes depositing a metal material over a photosensitive, insulative material and into a trench positioned over a bond pad. A photoresist material having a substantially planar surface may be formed over the metal material. A portion of the photoresist material may be etched to expose the metal material outside of the trench. The metal material may be isotropically etched to leave sidewalls of the metal protruding above surfaces of the photosensitive, insulative material outside of the trench. Some methods include removing a portion of a dielectric material to form at least one trench. Metal material and photoresist material may be deposited over the trench. A portion of the photoresist material may be etched to expose areas of the metal material. The metal material may be etched to form sidewalls of the metal material that protrude above the dielectric material.

Abstract: A method of forming a metal pattern on a dielectric material that comprises forming at least one trench in a photosensitive, insulative material is disclosed. The at least one trench may be positioned over at least one bond pad. A metal is formed over the photosensitive, insulative material and into the at least one trench and a photoresist material is formed over the metal. A portion of the photoresist material may be removed to expose elevated areas of the metal such that a remaining portion of the photoresist material does not extend beyond sidewalls of the at least one trench and onto the elevated areas of the metal. The metal may be exposed laterally beyond the remaining portion of the photoresist material.

Abstract: A method of forming a metal pattern on a dielectric material that comprises forming at least one trench in a photosensitive, insulative material is disclosed. The at least one trench may be positioned over at least one bond pad. A metal is formed over the photosensitive, insulative material and into the at least one trench and a photoresist material is formed over the metal. A portion of the photoresist material may be removed to expose elevated areas of the metal such that a remaining portion of the photoresist material does not extend beyond sidewalls of the at least one trench and onto the elevated areas of the metal. The metal may be exposed laterally beyond the remaining portion of the photoresist material.

Abstract: A method of forming a metal pattern on a dielectric layer that comprises forming at least one trench in a dielectric layer formed from a photosensitive, insulative material is disclosed. A conformed metal layer is formed over the dielectric layer and into the at least one trench and a photoresist layer is formed over the metal layer. The photoresist layer may be deposited so that a photoresist material fills the at least one trench. At least a portion of the photoresist layer is selectively removed. For instance, portions of the photoresist layer surrounding the at least one trench may be removed while a portion of the photoresist layer remains therein. At least a portion of the metal layer is selectively removed, such as portions of the metal layer surrounding the at least one trench. The photoresist layer remaining in the at least one trench may subsequently be removed. Intermediate semiconductor device structures are also disclosed.

Abstract: A method of forming a metal pattern on a dielectric layer that comprises forming at least one trench in a dielectric layer formed from a photosensitive, insulative material. A conformed metal layer is formed over the dielectric layer and into the at least one trench and a photoresist layer is formed over the metal layer. The photoresist layer may be deposited so that a photoresist material fills the at least one trench and forms a thinner coating on portions of the metal layer surrounding the at least one trench. At least a portion of the photoresist layer is selectively removed. For instance, portions of the photoresist layer surrounding the at least one trench may be removed while a portion of the photoresist layer remains therein. At least a portion of the metal layer is selectively removed, such as portions of the metal layer surrounding the at least one trench. The photoresist layer remaining in the trench may subsequently be removed. Intermediate semiconductor device structures are also disclosed.

Abstract: A method of forming a metal pattern on a dielectric layer that comprises forming at least one trench in a dielectric layer formed from a photosensitive, insulative material. A conformed metal layer is formed over the dielectric layer and into the at least one trench and a photoresist layer is formed over the metal layer. The photoresist layer may be deposited so that a photoresist material fills the at least one trench and forms a thinner coating on portions of the metal layer surrounding the at least one trench. At least a portion of the photoresist layer is selectively removed. For instance, portions of the photoresist layer surrounding the at least one trench may be removed while a portion of the photoresist layer remains therein. At least a portion of the metal layer is selectively removed, such as portions of the metal layer surrounding the at least one trench. The photoresist layer remaining in the trench may subsequently be removed. Intermediate semiconductor device structures are also disclosed.