Patents by Inventor G. Jeffrey Snyder
G. Jeffrey Snyder has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 9316545Abstract: A novel scanning Seebeck coefficient measurement technique is disclosed utilizing a cold scanning thermocouple probe tip on heated bulk and thin film samples. The system measures variations in the Seebeck coefficient within the samples. The apparatus may be used for two dimensional mapping of the Seebeck coefficient on the bulk and thin film samples. This technique can be utilized for detection of defective regions, as well as phase separations in the sub-mm range of various thermoelectric materials.Type: GrantFiled: July 11, 2012Date of Patent: April 19, 2016Assignee: California Institute of TechnologyInventors: G. Jeffrey Snyder, Shiho Iwanaga
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Patent number: 9147822Abstract: The present invention discloses heavily doped PbSe with high thermoelectric performance. Thermoelectric property measurements disclosed herein indicated that PbSe is high zT material for mid-to-high temperature thermoelectric applications. At 850 K a peak zT>1.3 was observed when nH˜1.0×1020 cm?3. The present invention also discloses that a number of strategies used to improve zT of PbTe, such as alloying with other elements, nanostructuring and band modification may also be used to further improve zT in PbSe.Type: GrantFiled: October 26, 2011Date of Patent: September 29, 2015Assignee: California Institute of TechnologyInventors: G. Jeffrey Snyder, Heng Wang, Yanzhong Pei
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Patent number: 9140612Abstract: A high temperature Seebeck coefficient measurement apparatus and method with various features to minimize typical sources of errors is described. Common sources of temperature and voltage measurement errors which may impact accurate measurement are identified and reduced. Applying the identified principles, a high temperature Seebeck measurement apparatus and method employing a uniaxial, four-point geometry is described to operate from room temperature up to 1300K. These techniques for non-destructive Seebeck coefficient measurements are simple to operate, and are suitable for bulk samples with a broad range of physical types and shapes.Type: GrantFiled: February 23, 2012Date of Patent: September 22, 2015Assignee: California Institute of TechnologyInventor: G. Jeffrey Snyder
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Patent number: 9059364Abstract: The present invention teaches an effective mechanism for enhancing thermoelectric performance through additional conductive bands. Using heavily doped p-PbTe materials as an example, a quantitative explanation is disclosed, as to why and how these additional bands affect the figure of merit. A high zT of approaching 2 at high temperatures makes these simple, likely more stable (than nanostructured materials) and Tl-free materials excellent for thermoelectric applications.Type: GrantFiled: November 2, 2011Date of Patent: June 16, 2015Assignee: California Institute of TechnologyInventors: G. Jeffrey Snyder, Yanzhong Pei
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Publication number: 20140373889Abstract: Disclosed herein are thermoelectric materials with high performance characteristics, and methods of use thereof Among the thermoelectric materials disclosed are those of the formula (Bi1?xSbx)2Te3. In some embodiments, the invention teaches that 0.5?x?0.9. In some embodiments, the invention further teaches doping with iodine (I), in order to decrease the hole carrier concentration of (Bi1?xSbx)2Te3 mixed crystal and improve zT.Type: ApplicationFiled: June 19, 2014Publication date: December 25, 2014Applicant: California Institute of TechnologyInventors: G. Jeffrey Snyder, Hyun-sik Kim
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Patent number: 8912425Abstract: The inventors demonstrate herein that homogeneous Ag-doped PbTe/Ag2Te composites exhibit high thermoelectric performance (˜50% over La-doped composites) associated with an inherent temperature induced gradient in the doping concentration caused by the temperature-dependent solubility of Ag in the PbTe matrix. This method provides a new mechanism to achieve a higher thermoelectric efficiency afforded by a given material system, and is generally applicable to other thermoelectric materials.Type: GrantFiled: October 19, 2011Date of Patent: December 16, 2014Assignee: California Institute of TechnologyInventors: G. Jeffrey Snyder, Yanzhong Pei
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Patent number: 8889028Abstract: The present invention demonstrates that weak scattering of carriers leads to a high mobility and therefore helps achieve low electric resistivity with high Seebeck coefficient for a thermoelectric material. The inventors demonstrate this effect by obtaining a thermoelectric figure of merit, zT, higher than 1.3 at high temperatures in n-type PbSe, because of the weak scattering of carriers in the conduction band as compared with that in the valence band. The invention further demonstrates favorable thermoelectric transport properties of n-type PbTe1-xIx with carrier concentrations ranging from 5.8×1018-1.4×1020 cm?3.Type: GrantFiled: May 3, 2012Date of Patent: November 18, 2014Assignee: California Institute of TechnologyInventors: G. Jeffrey Snyder, Aaron LaLonde, Yanzhong Pei, Heng Wang
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Patent number: 8801953Abstract: The inventors demonstrate herein that various Zintl compounds can be useful as thermoelectric materials for a variety of applications. Specifically, the utility of Ca3AlSb3, Ca5Al2Sb6, Ca5In2Sb6, Ca5Ga2Sb6, is described herein. Carrier concentration control via doping has also been demonstrated, resulting in considerably improved thermoelectric performance in the various systems described herein.Type: GrantFiled: October 19, 2011Date of Patent: August 12, 2014Assignee: California Institute of TechnologyInventors: G. Jeffrey Snyder, Eric Toberer, Alex Zevalkink
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Patent number: 8728340Abstract: The method of manufacturing the thermoelectric material including a plurality of phases that are phase-separated from a supersaturated solid solution includes: a process of performing a mechanical alloying treatment to a starting raw material that is prepared with a composition deviated from a composition range existing in an equilibrium state of a compound to generate the supersaturated solid solution; and a process of performing phase separation into the plurality of phases and solidification by heating and pressing the supersaturated solid solution, or by further performing a heat treatment according to the circumstances.Type: GrantFiled: March 27, 2012Date of Patent: May 20, 2014Assignees: Japan Science and Technology Agency, California Institute of TechnologyInventors: Teruyuki Ikeda, G. Jeffrey Snyder
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Publication number: 20140027681Abstract: The present invention demonstrates that weak scattering of carriers leads to a high mobility and therefore helps achieve low electric resistivity with high Seebeck coefficient for a thermoelectric material. The inventors demonstrate this effect by obtaining a thermoelectric figure of merit, zT, higher than 1.3 at high temperatures in n-type PbSe, because of the weak scattering of carriers in the conduction band as compared with that in the valence band. The invention further demonstrates favorable thermoelectric transport properties of n-type PbTe1-xIx with carrier concentrations ranging from 5.8×1018-1.4×1020 cm?3.Type: ApplicationFiled: May 3, 2012Publication date: January 30, 2014Applicant: California Institute of TechnologyInventors: G. Jeffrey Snyder, Aaron LaLonde, Yanzhong Pei, Heng Wang
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Patent number: 8614392Abstract: A micro-combustion power system is disclosed. The invention is comprised of a housing that further comprises two flow path volumes, each having generally opposing flow path directions and each generally having opposing configurations. Each flow path volume comprises a pre-heating volume having at least one pre-heating heat exchange structure. Each flow path volume further comprises a combustion volume having a combustion means or structure such as a catalytic material disposed therein Further, each flow path volume comprise a post-combustion volume having at least one post-combustion heat exchange structure. One or more thermoelectric generator means is in thermal communication with at least one of the combustion volumes whereby thermal energy generated by an air/fuel catalytic reaction in the combustion volume is transferred to the thermoelectric generator to convert same to electrical energy for use by an external circuit.Type: GrantFiled: September 4, 2009Date of Patent: December 24, 2013Inventors: Ying Hsu, Itzhak Sapir, Paul Ronney, G. Jeffrey Snyder
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Publication number: 20130180561Abstract: Disclosed herein include nanocomposites with improved thermoelectric performance. Also disclosed herein include methods of manufacturing and methods of using such nanocomposites.Type: ApplicationFiled: January 28, 2011Publication date: July 18, 2013Applicant: CALIFORNIA INSTITUTE OF TECHNOLOGYInventors: G. Jeffrey Snyder, Yanzhong Pei
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Publication number: 20130153811Abstract: The method of manufacturing the thermoelectric material including a plurality of phases that are phase-separated from a supersaturated solid solution includes: a process of performing a mechanical alloying treatment to a starting raw material that is prepared with a composition deviated from a composition range existing in an equilibrium state of a compound to generate the supersaturated solid solution; and a process of performing phase separation into the plurality of phases and solidification by heating and pressing the supersaturated solid solution, or by further performing a heat treatment according to the circumstances.Type: ApplicationFiled: March 27, 2012Publication date: June 20, 2013Inventors: Teruyuki IKEDA, G. Jeffrey SNYDER
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Publication number: 20130074898Abstract: Thermoelectric cooling systems are disclosed that utilize the Thomson effect. The disclosed systems can be used, for example, in cryogenic applications. In one aspect, a system is provided for thermoelectric cooling. The system comprises a pair of semiconductor elements, a cold plate and a hot plate. The pair of semiconductor elements comprises a P-type semiconductor element having a first carrier concentration and an N-type semiconductor element having a second carrier concentration. The first carrier concentration is functionally graded over the P-type semiconductor element and the second carrier concentration is functionally graded over the N-type semiconductor element. Each semiconductor element has a cold end and a hot end. The cold plate is thermally coupled to the cold ends of the P-type semiconductor elements and the N-type semiconductor element. The hot plate is thermally coupled to the hot ends of the P-type semiconductor element and the N-type semiconductor element.Type: ApplicationFiled: September 24, 2012Publication date: March 28, 2013Applicant: CALIFORNIA INSTITUTE OF TECHNOLOGYInventor: G. Jeffrey Snyder
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Publication number: 20130044788Abstract: A novel scanning Seebeck coefficient measurement technique is disclosed utilizing a cold scanning thermocouple probe tip on heated bulk and thin film samples. The system measures variations in the Seebeck coefficient within the samples. The apparatus may be used for two dimensional mapping of the Seebeck coefficient on the bulk and thin film samples. This technique can be utilized for detection of defective regions, as well as phase separations in the sub-mm range of various thermoelectric materials.Type: ApplicationFiled: July 11, 2012Publication date: February 21, 2013Applicant: California Institute of TechnologyInventor: G. JEFFREY SNYDER
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Publication number: 20120213250Abstract: A high temperature Seebeck coefficient measurement apparatus and method with various features to minimize typical sources of errors is described. Common sources of temperature and voltage measurement errors which may impact accurate measurement are identified and reduced. Applying the identified principles, a high temperature Seebeck measurement apparatus and method employing a uniaxial, four-point geometry is described to operate from room temperature up to 1300K. These techniques for non-destructive Seebeck coefficient measurements are simple to operate, and are suitable for bulk samples with a broad range of physical types and shapes.Type: ApplicationFiled: February 23, 2012Publication date: August 23, 2012Applicant: California Institute of TechnologyInventor: G. Jeffrey Snyder
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Publication number: 20120138870Abstract: The present invention teaches an effective mechanism for enhancing thermoelectric performance through additional conductive bands. Using heavily doped p-PbTe materials as an example, a quantitative explanation is disclosed, as to why and how these additional bands affect the figure of merit. A high zT of approaching 2 at high temperatures makes these simple, likely more stable (than nanostructured materials) and Tl-free materials excellent for thermoelectric applications.Type: ApplicationFiled: November 2, 2011Publication date: June 7, 2012Applicant: CALIFORNIA INSTITUTE OF TECHNOLOGYInventors: G. Jeffrey Snyder, Yanzhong Pei
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Publication number: 20120098162Abstract: A rapid hot press (RHP) method and system in which heat is supplied by RF induction to rapidly consolidate a material is described. Use of RF induction heating enables rapid heating and consolidation of powdered materials over a wide temperature range. Details of an exemplary system, instrumentation and performance using a thermoelectric material as an example are disclosed. The novel technique may be applied to any known sinterable materials. Notable applicable materials include thermoelectric materials, such as PbTe. An exemplary thermoelectric PbTe material may be pressed at an optimized temperature and time according to the technique to be consolidated under typical parameters and yield suitable properties of Seebeck coefficient, electrical resistivity, and thermal diffusivity.Type: ApplicationFiled: October 26, 2011Publication date: April 26, 2012Applicant: California Institute of TechnologyInventors: G. Jeffrey Snyder, Aaron LaLonde, Teruyuki Ikeda
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Publication number: 20120097906Abstract: The present invention discloses heavily doped PbSe with high thermoelectric performance. Thermoelectric property measurements disclosed herein indicated that PbSe is high zT material for mid-to-high temperature thermoelectric applications. At 850 K a peak zT>1.3 was observed when nH˜1.0×1020 cm?3. The present invention also discloses that a number of strategies used to improve zT of PbTe, such as alloying with other elements, nanostructuring and band modification may also be used to further improve zT in PbSe.Type: ApplicationFiled: October 26, 2011Publication date: April 26, 2012Applicant: CALIFORNIA INSTITUTE OF TECHNOLOGYInventors: G. Jeffrey Snyder, Heng Wang, Yanzhong Pei
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Publication number: 20120090656Abstract: The inventors demonstrate herein that homogeneous Ag-doped PbTe/Ag2Te composites exhibit high thermoelectric performance (˜50% over La-doped composites) associated with an inherent temperature induced gradient in the doping concentration caused by the temperature-dependent solubility of Ag in the PbTe matrix. This method provides a new mechanism to achieve a higher thermoelectric efficiency afforded by a given material system, and is generally applicable to other thermoelectric materials.Type: ApplicationFiled: October 19, 2011Publication date: April 19, 2012Applicant: CALIFORNIA INSTITUTE OF TECHNOLOGYInventors: G. Jeffrey Snyder, Yanzhong Pei