Patents by Inventor Gérald Dujardin

Gérald Dujardin has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Monoatomic and moncrystalline layer of large size, in diamond type carbon, and method for the manufacture of this layer
    Patent number: 6924509
    Abstract: Monoatomic and monocrystalline layer of large size, in diamond type carbon, and method for the manufacture of this layer. According to the invention, a monocrystalline substrate (2) is formed in SiC terminated by an atomic plane of carbon according to a reconstruction c(2×2) and at least one annealing is carried out, capable of transforming this atomic plane, which is a plane of dimers C?C (4) of sp configuration, into a plane of dimers C—C (8) of sp3 configuration. Application to microelectronics, optics, optoelectronics, micromechanics and biomaterials.
    Type: Grant
    Filed: September 23, 2004
    Date of Patent: August 2, 2005
    Assignees: Commissariat a l'Energie Atomique, Centre National de la Recherche Scientifique
    Inventors: Vincent Derycke, Gérald Dujardin, Andrew Mayne, Patrick Soukiassian
  • Monoatomic and moncrystalline layer of large size, in diamond type carbon, and method for the manufacture of this layer
    Publication number: 20050035380
    Abstract: Monoatomic and monocrystalline layer of large size, in diamond type carbon, and method for the manufacture of this layer. According to the invention, a monocrystalline substrate (2) is formed in SiC terminated by an atomic plane of carbon according to a reconstruction c(2x2) and at least one annealing is carried out, capable of transforming this atomic plane, which is a plane of dimers C?C (4) of sp configuration, into a plane of dimers C-C (8) of sp3 configuration. Application to microelectronics, optics, optoelectronics, micromechanics and biomaterials.
    Type: Application
    Filed: September 23, 2004
    Publication date: February 17, 2005
    Inventors: Vincent Derycke, Gerald Dujardin, Andrew Mayne, Patrick Soukiassian
  • Silicon layer highly sensitive to oxygen and method for obtaining same
    Patent number: 6667102
    Abstract: A highly oxygen-sensitive silicon layer (2) is formed on a substrate (4) of, for example, SiC. The layer (2) has a 4×3 surface structure. The silicon layer (2) is deposited on a surface of the substrate (4) in a substantially uniform manner. The highly oxygen-sensitive silicon layer of the present invention may be used, for example in microelectronics.
    Type: Grant
    Filed: May 24, 2002
    Date of Patent: December 23, 2003
    Assignee: Commissariat A l'Energie Atomique
    Inventors: Fabrice Amy, Christian Brylinski, Gérald Dujardin, Hanna Enriquez, Andrew Mayne, Patrick Soukiassian
  • Very long and highly stable atomic wires, method for making these wires, application in nano-electronics
    Patent number: 6274234
    Abstract: Atomic wires of great length and great stability are formed on the surface of a SiC substrate as straight chains of dimers of an element chosen from amongst SiC and C. In order to produce same, layers of the element are formed on the surface and the assembly is constructed by means of annealings of the surface provided with the layers. The resulting wires have application to nanoelectronics.
    Type: Grant
    Filed: June 14, 1999
    Date of Patent: August 14, 2001
    Assignees: Commissariat a l'Energie Atomique, Centre National de la Recherche Scientifique
    Inventors: Gérald Dujardin, Andrew Mayne, Fabrice Semond, Patrick Soukiassian