Abstract: The subject matter of the invention is a device for the hydrolysis of at least one compound. The device comprises a first cylindrical section having a diameter Dmax, a central duct, an outer duct which surrounds the central duct coaxially, an outlet having a diameter DA, and a second section which tapers towards the outlet and into which the ducts issue. The second section has, in cross-section along a longitudinal axis AL of the device, a profile which is described by two radii R1 and R2 which merge tangentially into each other, where 0.2<R1/DA<4.0 and 0.3<R2/DA<5.0. The invention also relates to a method for the hydrolysis of at least one compound. In the method, the device is used to conduct water at least through the outer duct and to conduct the compound to be hydrolysed through the central duct and/or through at least one intermediate duct and to mix them with each other at least partially in the second section. The compound and the water are in liquid form.

Abstract: Deposition on a sightglass in a reactor for CVD deposition of silicon is reduced by conducting a first purge gas stream substantially parallel to the reactor end surface of the sightglass, and conducting a second purge gas stream within the sightglass tube at an angle from the sightglass surface toward the interior of the reactor.

Abstract: The subject matter of the invention is a device for the hydrolysis of at least one compound. The device comprises a first cylindrical section having a diameter Dmax, a central duct, an outer duct which surrounds the central duct coaxially, an outlet having a diameter DA, and a second section which tapers towards the outlet and into which the ducts issue. The second section has, in cross-section along a longitudinal axis AL of the device, a profile which is described by two radii R1 and R2 which merge tangentially into each other, where 0.2<R1/DA<4.0 and 0.3<R2/DA<5.0. The invention also relates to a method for the hydrolysis of at least one compound. In the method, the device is used to conduct water at least through the outer duct and to conduct the compound to be hydrolysed through the central duct and/or through at least one intermediate duct and to mix them with each other at least partially in the second section. The compound and the water are in liquid form.

Abstract: Deposition on a sightglass in a reactor for CVD deposition of silicon is reduced by conducting a first purge gas stream substantially parallel to the reactor end surface of the sightglass, and conducting a second purge gas stream within the sightglass tube at an angle from the sightglass surface toward the interior of the reactor.

Abstract: Deposition on a sightglass in a reactor for CVD deposition of silicon is reduced by conducting a first purge gas stream substantially parallel to the reactor end surface of the sightglass, and conducting a second purge gas stream within the sightglass tube at an angle from the sightglass surface toward the interior of the reactor.

Abstract: The deposition of polycrystalline silicon onto heated filament rods in a Siemens process is improved by supplying reaction gas at least partially through nozzles in the vertical wall of the deposition reactor, at an angle of 0° to 45° to the reactor wall, towards the base plate of the reactor.

Abstract: The deposition of polycrystalline silicon onto heated filament rods in a Siemens process is improved by supplying reaction gas at least partially through nozzles in the vertical wall of the deposition reactor, at an angle of 0° to 45° to the reactor wall, towards the base plate of the reactor.

Abstract: Deposition on a sightglass in a reactor for CVD deposition of silicon is reduced by conducting a first purge gas stream substantially parallel to the reactor end surface of the sightglass, and conducting a second purge gas stream within the sightglass tube at an angle from the sightglass surface toward the interior of the reactor.