Patents by Inventor G. Ronald Hadley

G. Ronald Hadley has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 6807353
    Abstract: A microfabricated Bragg waveguide of semiconductor-compatible material having a hollow core and a multilayer dielectric cladding can be fabricated by integrated circuit technologies. The microfabricated Bragg waveguide can comprise a hollow channel waveguide or a hollow fiber. The Bragg fiber can be fabricated by coating a sacrificial mandrel or mold with alternating layers of high- and low-refractive-index dielectric materials and then removing the mandrel or mold to leave a hollow tube with a multilayer dielectric cladding. The Bragg channel waveguide can be fabricated by forming a trench embedded in a substrate and coating the inner wall of the trench with a multilayer dielectric cladding. The thicknesses of the alternating layers can be selected to satisfy the condition for minimum radiation loss of the guided wave.
    Type: Grant
    Filed: December 19, 2001
    Date of Patent: October 19, 2004
    Assignee: Sandia Corporation
    Inventors: James G. Fleming, Shawn-Yu Lin, G. Ronald Hadley
  • Patent number: 5903590
    Abstract: A vertical-cavity surface-emitting laser device. The vertical-cavity surface-emitting laser (VCSEL) device comprises one or more VCSELs with each VCSEL having a mode-control region thereabout, with the mode-control region forming an optical cavity with an effective cavity length different from the effective cavity length within each VCSEL. Embodiments of the present invention can be formed as single VCSELs and as one- or two-dimensional arrays of VCSELs, with either an index-guided mode of operation or an index anti-guided mode of operation being defined by a sign of the difference in the two effective cavity lengths.
    Type: Grant
    Filed: May 20, 1996
    Date of Patent: May 11, 1999
    Assignee: Sandia Corporation
    Inventors: G. Ronald Hadley, Kevin L. Lear, Adelbert Awyoung, Kent D. Choquette
  • Patent number: 5790730
    Abstract: A structure and method for packaging an integrated optic circuit. The package comprises a first wall having a plurality of microlenses formed therein to establish channels of optical communication with an integrated optic circuit within the package. A first registration pattern is provided on an inside surface of one of the walls of the package for alignment and attachment of the integrated optic circuit. The package in one embodiment may further comprise a fiber holder for aligning and attaching a plurality of optical fibers to the package and extending the channels of optical communication to the fibers outside the package. In another embodiment, a fiber holder may be used to hold the fibers and align the fibers to the package. The fiber holder may be detachably connected to the package.
    Type: Grant
    Filed: November 10, 1994
    Date of Patent: August 4, 1998
    Inventors: Stanley H. Kravitz, G. Ronald Hadley, Mial E. Warren, Richard F. Carson, Marcelino G. Armendariz
  • Patent number: 5627929
    Abstract: An integrated optical XY coupler having two converging input waveguide arms meeting in a central section and a central output waveguide arm and two diverging flanking output waveguide arms emanating from the central section. In-phase light from the input arms constructively interfers in the central section to produce a single mode output in the central output arm with the rest of the light being collected in the flanking output arms. Crosstalk between devices on a substrate is minimized by this collection of the out-of-phase light by the flanking output arms of the XY coupler.
    Type: Grant
    Filed: May 4, 1995
    Date of Patent: May 6, 1997
    Assignee: Sandia Corporation
    Inventors: G. Allen Vawter, G. Ronald Hadley
  • Patent number: 4995047
    Abstract: A continuous wave integrated injection-locked high-power diode laser array is provided with an on-chip independently-controlled master laser. The integrated injection locked high-power diode laser array is capable of continuous wave lasing in a single near-diffraction limited output beam at single-facet power levels up to 125 mW (250 mW total). Electronic steering of the array emission over an angle of 0.5 degrees is obtained by varying current to the master laser. The master laser injects a laser beam into the slave array by reflection of a rear facet.
    Type: Grant
    Filed: August 30, 1989
    Date of Patent: February 19, 1991
    Assignee: The United States of America as represented by the United States Department of Energy
    Inventors: G. Ronald Hadley, John P. Hohimer, Adelbert Owyoung
  • Patent number: 4965806
    Abstract: A broad-area semiconductor laser diode includes an active lasing region interposed between an upper and a lower cladding layer, the laser diode further comprising structure for controllably varying a lateral refractive index profile of the diode to substantially compensate for an effect of junction heating during operation. In embodiments disclosed the controlling structure comprises resistive heating strips or non-radiative linear junctions disposed parallel to the active region. Another embodiment discloses a multi-layered upper cladding region selectively disordered by implanted or diffused dopant impurities. Still another embodiment discloses an upper cladding layer of variable thickness that is convex in shape and symmetrically disposed about a central axis of the active region. The teaching of the invention is also shown to be applicable to arrays of semiconductor laser diodes.
    Type: Grant
    Filed: June 15, 1989
    Date of Patent: October 23, 1990
    Assignee: The United States of America as represented by the United States Department of Energy
    Inventors: Carol I. H. Ashby, G. Ronald Hadley, John P. Hohimer, Adelbert Owyoung
  • Patent number: 4751705
    Abstract: By optically injecting a single end-element of a semiconductor laser array, both the spatial and spectral emission characteristics of the entire laser array is controlled. With the output of the array locked, the far-field emission angle of the array is continuously scanned over several degrees by varying the injection frequency.
    Type: Grant
    Filed: October 7, 1986
    Date of Patent: June 14, 1988
    Assignee: The United States of America as represented by the United States Department of Energy
    Inventors: G. Ronald Hadley, John P. Hohimer, Adelbert Owyoung