Patents by Inventor G. Scot Srodes

G. Scot Srodes has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Residue-free plasma etch of high temperature AlCu
    Patent number: 4915779
    Abstract: A residue-free plasma etch of high temperature aluminum copper metallization is provided by the use of a single plasma etcher. The metallization layer is covered by a protective oxide layer. This structure is then placed in the single etcher and a vacuum is established. The protective oxide layer is then etched and without breaking the vacuum or removing the structure from the etcher the metal layer is also etched. This results in the etched surface being residue-free.
    Type: Grant
    Filed: August 23, 1988
    Date of Patent: April 10, 1990
    Assignee: Motorola Inc.
    Inventors: G. Scot Srodes, Willis R. Goodner, John L. Freeman, Jr., Andrew G. Nagy