Abstract: A substrate processing system includes a first load lock, a process chamber having a first opening to allow an exchange of a substrate between the first load lock and the first process chamber, first rollers in the process chamber; and second rollers in the first load lock, wherein the first rollers and the second rollers are configured to transport a substrate thereon through the first opening between the first load lock and the process chamber. At least some of the first rollers and the second rollers are idler rollers.

Abstract: A substrate processing system includes a processing chamber that can house a substrate therein; a target comprises a sputtering surface in the processing chamber, wherein the substrate is configured to receive material sputtered off the sputtering surface; a magnetron positioned adjacent to the target, wherein the magnetron can produce two erosion grooves separated by a distance S on the sputtering surface, wherein at least one of the two erosion grooves is characterized by an erosion width W; and a first transport mechanism that can move the magnetron in N steps along a travel path in a first direction. N is an integer. The magnetron can stop at each of the N steps to allow materials to be sputtered off the sputtering surface and to be deposited on the substrate. The N steps have substantially the same step size. The step size is approximately equal to the erosion width W.

Abstract: A substrate processing system includes a first load lock, a process chamber having a first opening to allow an exchange of a substrate between the first load lock and the first process chamber, first rollers in the process chamber; and second rollers in the first load lock, wherein the first rollers and the second rollers are configured to transport a substrate thereon through the first opening between the first load lock and the process chamber. The first rollers and the second rollers are not rotated by an active transport mechanism.

Abstract: A target assembly for material deposition includes a first target piece having a first sputtering surface and comprising a first target material that is to be sputtered off the first sputtering surface and to deposit on a substrate. The target assembly also includes a second target piece juxtaposed to the first target piece. The second target piece comprises a second sputtering surface and a second target material that can be sputtered off the second sputtering surface and to deposit on the substrate. The first target piece and the second target piece are configured to be switched in positions and/or orientations after a period of sputtering operations.

Abstract: A substrate processing system includes a source unit configured to supply a deposition material to a substrate, a substrate holder configured to hold a substrate to receive the deposition material, a shadow mask comprising a frame that includes two opposing arms; and a crossbar configured to be mounted to the two opposing arms. The frame and the crossbar define a plurality of openings that allow the deposition material supplied by the source unit to be deposited on the substrate. A transport mechanism can produce relative movement between the shadow mask and the substrate.

Abstract: A deposition system includes a chamber, a plurality of targets in a center region in the chamber and a plurality of substrates in the chamber. The targets are sequentially positioned when viewed in a first direction. At least one of the targets includes a sputtering surface facing outward. The substrates are sequentially positioned when viewed in the first direction. At least one of the substrates includes a deposition surface configured to receive material sputtered off the sputtering surface.

Abstract: A processing system includes a chamber. A plurality of processing stations in a center region in the chamber can be sequentially positioned when viewed in a first direction. The plurality of processing stations is configured to provide at least one processing step selected from the group consisting of thermal evaporation, thermal sublimation, sputtering, chemical vapor deposition (CVD), plasma enhanced chemical vapor deposition (PECVD), ion etching, or sputter etching. A plurality of substrates in the chamber can be sequentially positioned when viewed in the first direction. At least one of the plurality of substrate comprises a receiving surface configured to receive the at least one processing step from the plurality of processing stations.