Abstract: The present invention provides: a negative electrode active material having high discharge capacity, high charge output, and excellent discharge output characteristics; and a carbon material therefor. A carbon material for a negative electrode active material according to an embodiment of the present invention provides a carbon material having the total fibrosity index (TFI) of 0.58 to 0.78.

Abstract: A 6-arm PEG hydrogel composition whose physical properties are converted from a sol to a gel within 30 minutes over time is provided. Two types of PEG derivatives are included as a main component of the hydrogel, and when each of the PEG derivatives is dissolved in a buffer solution, and then the two solutions are mixed, it can be converted in physical properties to a gel state within 30 minutes.

Abstract: The present invention relates to predicting a future onset possibility of a disease by using an artificial intelligence algorithm, and a method for predicting the onset of the disease may include: obtaining input data based on medical checkup data of a subject; generating output data indicating an onset possibility of the disease by year from the input data by using a trained artificial intelligence model; determining at least one item with a relatively high contribution to a result of the output data; and outputting information regarding the onset possibility of the disease by year and the at least one item.

Abstract: A semiconductor memory device and a method for fabricating a semiconductor memory device, the device including a peripheral logic structure on a substrate; a horizontal conductive substrate on the peripheral logic structure; a stacked structure including a plurality of electrode pads stacked in a vertical direction; a plate contact plug connected to the horizontal conductive substrate; and a first penetration electrode connected to the lower connection wiring body, wherein upper surfaces of the plate contact plug and the first penetration electrode are on a same plane, the plate contact plug includes an upper part and a lower part directly connected to each other, the first penetration electrode includes an upper part and a lower part directly connected to each other, moving away from upper surfaces of the first penetration electrode and the plate contact plug, widths of the upper parts increase and widths of the lower parts decrease.

Abstract: A semiconductor memory device and a method for fabricating a semiconductor memory device, the device including a peripheral logic structure on a substrate; a horizontal conductive substrate on the peripheral logic structure; a stacked structure including a plurality of electrode pads stacked in a vertical direction; a plate contact plug connected to the horizontal conductive substrate; and a first penetration electrode connected to the lower connection wiring body, wherein upper surfaces of the plate contact plug and the first penetration electrode are on a same plane, the plate contact plug includes an upper part and a lower part directly connected to each other, the first penetration electrode includes an upper part and a lower part directly connected to each other, moving away from upper surfaces of the first penetration electrode and the plate contact plug, widths of the upper parts increase and widths of the lower parts decrease.

Abstract: Disclosed are a sandwich panel capable of being advantageously applied to a body wearable device, and a method of manufacturing the same. The sandwich panel includes: a core; and face sheets attached to both surfaces of the core, wherein the face sheet is made of a two-dimensional auxetic material. The core has a neutral surface in accordance with bending moment and is made of a porous material. The face sheet is made of metal, polymer, ceramic, or a composite material, and has higher density, strength, and rigidity than the core. The method includes: processing face sheets; and attaching the face sheets to both surfaces of a core, wherein the face sheet is processed to have a two-dimensional auxetic structure.

Abstract: Disclosed are a sandwich panel capable of being advantageously applied to a body wearable device, and a method of manufacturing the same. The sandwich panel includes: a core; and face sheets attached to both surfaces of the core, wherein the face sheet is made of a two-dimensional auxetic material. The core has a neutral surface in accordance with bending moment and is made of a porous material. The face sheet is made of metal, polymer, ceramic, or a composite material, and has higher density, strength, and rigidity than the core. The method includes: processing face sheets; and attaching the face sheets to both surfaces of a core, wherein the face sheet is processed to have a two-dimensional auxetic structure.

Abstract: A semiconductor memory device and a method for fabricating a semiconductor memory device, the device including a peripheral logic structure on a substrate; a horizontal conductive substrate on the peripheral logic structure; a stacked structure including a plurality of electrode pads stacked in a vertical direction; a plate contact plug connected to the horizontal conductive substrate; and a first penetration electrode connected to the lower connection wiring body, wherein upper surfaces of the plate contact plug and the first penetration electrode are on a same plane, the plate contact plug includes an upper part and a lower part directly connected to each other, the first penetration electrode includes an upper part and a lower part directly connected to each other, moving away from upper surfaces of the first penetration electrode and the plate contact plug, widths of the upper parts increase and widths of the lower parts decrease.