Abstract: Method of manufacturing a single-side-contacted photovoltaic device (1), comprising the steps of: a) providing a photovoltaically-active substrate (3) defining a plurality of alternating hole collecting zones (3a) and electron collecting zones (3b) arranged in parallel strips; b) depositing a conductive layer (5) across said zones; c) depositing at least one conductive track (9) extending along at least part of each of said zones (3a, 3b); d) selectively forming a dielectric layer (7) on each of said zones (3a, 3b), so as to leave an exposed area free of dielectric at an interface between adjacent zones (3a, 3b); e) etching said conductive layer (5) in said exposed areas; f) applying a plurality of interconnecting conductors (11a, 11b) so as to electrically interconnect at least a portion of said hole collecting zones (3a) with each other, and to electrically interconnect at least a portion of said electron collecting zones (3b) with each other.

Abstract: A solution including at least one metal salt, a reducing agent which makes it possible to reduce the metal salt, and a stabilising additive of formula F1 in which the Ra, Rb and Rc groups denote, independently of one another, an alkane, an alkene or an alkyne, which may be independently linear, branched or cyclic and which include from 1 to 20 carbon atoms, and where the Rd and Re groups denote, independently of one another, a hydrogen atom, or an alkane, an alkene or an alkyne, which may each be independently linear, branched or cyclic and which include from 1 to 20 carbon atoms.

Abstract: A method of manufacturing an optoelectronic device includes the steps of: providing a substrate; depositing a first electrode layer on the substrate; depositing a first charge-carrier selective layer with a thickness less than 5 nm situated directly on the first electrode layer; depositing insulating silicon oxide nanoparticles directly on the first charge-carrier selective layer, the particles having a diameter between 10 nm and 100 nm; depositing a perovskite-based semiconductor layer on the first charge-carrier selective layer and on the insulating silicon oxide nanoparticles, the perovskite-based semiconductor layer being in intimate contact with both the first charge-carrier selective layer and the insulating silicon oxide nanoparticles; depositing a second charge-carrier selective layer on the perovskite-based semiconductor layer; depositing a second electrode layer on the second charge-carrier selective layer.

Abstract: Method of manufacturing a single-side-contacted photovoltaic device (1), comprising the steps of: a) providing a photovoltaically-active substrate (3) defining a plurality of alternating hole collecting zones (3a) and electron collecting zones (3b) arranged in parallel strips; b) depositing a conductive layer (5) across said zones; c) depositing at least one conductive track (9) extending along at least part of each of said zones (3a, 3b); d) selectively forming a dielectric layer (7) on each of said zones (3a, 3b), so as to leave an exposed area free of dielectric at an interface between adjacent zones (3a, 3b); e) etching said conductive layer (5) in said exposed areas; f) applying a plurality of interconnecting conductors (11a, 11b) so as to electrically interconnect at least a portion of said hole collecting zones (3a) with each other, and to electrically interconnect at least a portion of said electron collecting zones (3b) with each other.

Abstract: Method of manufacturing a photovoltaic cell, comprising the steps of: providing a photovoltaic conversion device; providing a transparent conductive oxide layer upon at least a first face of said photovoltaic conversion device; forming a self-assembled monolayer on said transparent conductive oxide layer, said self-assembled monolayer being based on molecules terminated by at least one group F which is chosen from: a phosphonic acid group, a P(O)O2?M+ group, a OPO3H2 group, or an OP(O)O2?M+ group, wherein M+ is a metal cation; patterning said self-assembled monolayer so as to define at least one plateable zone in which said transparent conductive oxide layer is exposed; plating a metal onto said at least one plateable zone.

Abstract: Method of forming a metallic plating (9) on a substrate (1), comprising the steps of: —providing a substrate (1) comprising a hydrocarbon-based polymer containing C—C and either or both of C—H and N—H bonds; —covalently bonding an azide-containing primer compound (3) to said substrate (1) by C—H and/or N—H insertion, said primer compound (3) comprising molecules each having at plurality of C—H and/or C—N insertion sites; —in the absence of in-situ polymerisation, covalently bonding a pre-synthesised chelating polymer (5) to said primer compound (3) by C—H and/or N—H insertion, said chelating polymer (5) being capable of forming ligand bonds with metal atoms or ions; —dispersing a plating catalyst (7) in said pre-synthesised polymer (5); —forming said metallic plating (9) on said pre-synthesised polymer (5) by means of electroless plating or electroplating