Abstract: A vacuum chamber has multiple wafer positions, and the wafers are positioned by a rotating pallet. Above a wafer position in the chamber there may be a sputtering target, a flat inductively coupled plasma (ICP) coil for etching the wafer and/or promoting sputtering, and a TEOS vapor outlet for forming an oxide film on the wafer. As the pallet rotates, a wafer may first have deposited a thin layer of oxide on walls of a via hole at the TEOS position. A metal layer may then be sputtered in the via hole at the sputtering position, and any pinch-off material may be etched away at an etching position. A magnet behind each target scans back and forth behind the target. Vertical magnet walls substantially surround a sputtering target for confining the sputtered material to an angle that is more normal to the wafer than prior art trajectories to fill narrower vias.