Abstract: A complexly shaped Si/SiC cermet part including a protective coating deposited on a surface of the cermet part facing the plasma of the reactor. The cermet part is formed by casting a SiC green form and machining the shape into the green form. The green form is incompletely sintered such that it is unconsolidated and shrinks by less than 1% during sintering. Molten silicon is flowed into the voids of the unconsolidated sintered body. Chemical vapor deposition or plasma spraying coats onto the cermet structure a protective film of silicon carbide, boron carbide, diamond, or related carbon-based materials. The part may be configured for use in a plasma reactor, such as a chamber body, showerhead, focus ring, or chamber liner.

Abstract: A high efficiency radio frequency (RF) impedance matching network containing an "L-type" inductor-capacitor (LC) circuit where the capacitor is a variable capacitor coupled from an input port to ground and the inductor is a variable inductance inductor coupled from the input port to an output port. A blocking capacitor is provided between the inductor and the output port and a ceramic capacitor is coupled in parallel across the variable capacitor. The impedance match is tuned by physically adjusting tuning elements of both the inductor and capacitor. The variable inductor contains an improved inductor tuning element that optimizes current flow in the tuning elements and inductor. To further improve the efficiency of the matching network, the assembly uses an improved enclosure interior finish and various circuit optimization techniques that reduce contributions to match loop resistance.