Patents by Inventor Gabriel Ferro

Gabriel Ferro has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 11251265
    Abstract: A support for a semiconductor structure includes a charge-trapping layer on a base substrate. The charge-trapping layer consists of a polycrystalline main layer and, interposed in the main layer or between the main layer and the base substrate, at least one intermediate polycrystalline layer composed of a silicon and carbon alloy or carbon. The intermediate layer has a resistivity greater than 1000 ohm·cm.
    Type: Grant
    Filed: February 23, 2017
    Date of Patent: February 15, 2022
    Assignees: Soitec, Centre National de la Recherche Scientifiaue
    Inventors: Christophe Figuet, Oleg Kononchuk, Kassam Alassaad, Gabriel Ferro, Véronique Souliere, Christelle Veytizou, Taguhi Yeghoyan
  • Publication number: 20190058031
    Abstract: A support for a semiconductor structure includes a charge-trapping layer on a base substrate. The charge-trapping layer consists of a polycrystalline main layer and, interposed in the main layer or between the main layer and the base substrate, at least one intermediate polycrystalline layer composed of a silicon and carbon alloy or carbon. The intermediate layer has a resistivity greater than 1000 ohm·cm.
    Type: Application
    Filed: February 23, 2017
    Publication date: February 21, 2019
    Applicants: Soitec, Centre National de la Recherche Scientifique, Universite Claude Bernard Lyon 1, Soitec
    Inventors: Christophe Figuet, Oleg Kononchuk, Kassam Alassaad, Gabriel Ferro, Véronique Souliere, Christelle Veytizou, Taguhi Yeghoyan