Patents by Inventor Gabriel Hay Graham
Gabriel Hay Graham has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20240141541Abstract: An apparatus for electroplating a metal on a semiconductor substrate with high control over plated thickness on a die-level includes an ionically resistive ionically permeable element (e.g., a plate with channels), where the element allows for flow of ionic current through the element towards the substrate during electroplating, where the element includes a plurality of regions, each region having a pattern of varied local resistance, and where the pattern of varied local resistance repeats in at least two regions. An electroplating method includes providing a semiconductor substrate to an electroplating apparatus having an ionically resistive ionically permeable element or a grid-like shield having a pattern correlating with a pattern of features on the substrate, and plating metal, while the pattern on the substrate remains spatially aligned with the pattern of the element or the grid-like shield for at least a portion of the total electroplating time.Type: ApplicationFiled: March 15, 2022Publication date: May 2, 2024Inventors: Lee Peng Chua, Gabriel Hay Graham, Bryan L. Buckalew, Stephen J. Banik, II, Santosh Kumar, James Isaac Fortner, Robert Rash, Steven T. Mayer
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Publication number: 20240076795Abstract: An ionically resistive ionically permeable element for use in an electroplating apparatus includes ribs to tailor hydrodynamic environment proximate a substrate during electroplating. In one implementation, the ionically resistive ionically permeable element includes a channeled portion that is at least coextensive with a plating face of the substrate, and a plurality of ribs extending from the substrate-facing surface of the channeled portion towards the substrate. Ribs include a first plurality of ribs of full maximum height and a second plurality of ribs of smaller maximum height than the full maximum height. In one implementation the ribs of smaller maximum height are disposed such that the maximum height of the ribs gradually increases in a direction from one edge of the element to the center of the element.Type: ApplicationFiled: January 19, 2022Publication date: March 7, 2024Inventors: Stephen J. Banik, II, Gabriel Hay Graham, Bryan L. Buckalew, Robert Rash, Lee Peng Chua, Frederick Dean Wilmot, Chien-Chieh Lin
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Patent number: 11746435Abstract: An electroplating apparatus includes an electrode at the bottom of a chamber, an ionically resistive element with through holes arranged horizontally at the top of the chamber, with a membrane in the middle. One or more panels extend vertically and parallelly from the membrane to the element and extend linearly across the chamber, forming a plurality of regions between the membrane and the element. A substrate with a protuberance extending along a chord of the substrate and contacting a top surface of the element is arranged above a first region. An electrolyte flowed between the substrate and the element descends into the first region via the through holes on a first side of the protuberance and ascends from the first region via the through holes on a second side of the protuberance, forcing air bubbles out from a portion of the element associated with the first region.Type: GrantFiled: December 23, 2021Date of Patent: September 5, 2023Assignee: LAM RESEARCH CORPORATIONInventors: Stephen J. Banik, Bryan L. Buckalew, Gabriel Hay Graham, Alfred Bostick, Sean Wilbur, John Floyd Ostrowski
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Publication number: 20230175162Abstract: The embodiments herein relate to apparatuses and methods for electroplating one or more materials onto a substrate. Embodiments herein utilize a cross flow conduit in the electroplating cell to divert flow of fluid from a region between a substrate and a channeled ionically resistive plate positioned near the substrate down to a level lower than level of fluid in a fluid containment unit for collecting overflow fluid from the plating system for recirculation. The cross flow conduit can include channels cut into components of the plating cell to allow diverted flow, or can include an attachable diversion device mountable to an existing plating cell to divert flow downwards to the fluid containment unit. Embodiments also include a flow restrictor which may be a plate or a pressure relief valve for modulating flow of fluid in the cross flow conduit during plating.Type: ApplicationFiled: January 17, 2023Publication date: June 8, 2023Inventors: Stephen J. Banik, II, Aaron Berke, Gabriel Hay Graham, Gregory J. Kearns, Lee Peng Chua, Bryan L. Buckalew
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Patent number: 11585007Abstract: The embodiments herein relate to apparatuses and methods for electroplating one or more materials onto a substrate. Embodiments herein utilize a cross flow conduit in the electroplating cell to divert flow of fluid from a region between a substrate and a channeled ionically resistive plate positioned near the substrate down to a level lower than level of fluid in a fluid containment unit for collecting overflow fluid from the plating system for recirculation. The cross flow conduit can include channels cut into components of the plating cell to allow diverted flow, or can include an attachable diversion device mountable to an existing plating cell to divert flow downwards to the fluid containment unit. Embodiments also include a flow restrictor which may be a plate or a pressure relief valve for modulating flow of fluid in the cross flow conduit during plating.Type: GrantFiled: November 15, 2019Date of Patent: February 21, 2023Assignee: Lam Research CorporationInventors: Stephen J. Banik, II, Aaron Berke, Gabriel Hay Graham, Gregory J. Kearns, Lee Peng Chua, Bryan L. Buckalew
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Publication number: 20220119977Abstract: An electroplating apparatus includes an electrode at the bottom of a chamber, an ionically resistive element with through holes arranged horizontally at the top of the chamber, with a membrane in the middle. One or more panels extend vertically and parallelly from the membrane to the element and extend linearly across the chamber, forming a plurality of regions between the membrane and the element. A substrate with a protuberance extending along a chord of the substrate and contacting a top surface of the element is arranged above a first region. An electrolyte flowed between the substrate and the element descends into the first region via the through holes on a first side of the protuberance and ascends from the first region via the through holes on a second side of the protuberance, forcing air bubbles out from a portion of the element associated with the first region.Type: ApplicationFiled: December 23, 2021Publication date: April 21, 2022Inventors: Stephen J. BANIK, Bryan L. BUCKALEW, Gabriel Hay GRAHAM, Alfred BOSTICK, Sean WILBUR, John Floyd OSTROWSKI
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Patent number: 11214887Abstract: An electroplating apparatus includes an electrode at the bottom of a chamber, an ionically resistive element with through holes arranged horizontally at the top of the chamber, with a membrane in the middle. One or more panels extend vertically and parallelly from the membrane to the element and extend linearly across the chamber, forming a plurality of regions between the membrane and the element. A substrate with a protuberance extending along a chord of the substrate and contacting a top surface of the element is arranged above a first region. An electrolyte flowed between the substrate and the element descends into the first region via the through holes on a first side of the protuberance and ascends from the first region via the through holes on a second side of the protuberance, forcing air bubbles out from a portion of the element associated with the first region.Type: GrantFiled: May 8, 2020Date of Patent: January 4, 2022Assignee: LAM RESEARCH CORPORATIONInventors: Stephen J. Banik, Bryan L. Buckalew, Gabriel Hay Graham, Alfred Bostick, Sean Wilbur, John Floyd Ostrowski
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Publication number: 20210395913Abstract: The embodiments herein relate to apparatuses and methods for electroplating one or more materials onto a substrate. Embodiments herein utilize a cross flow conduit in the electroplating cell to divert flow of fluid from a region between a substrate and a channeled ionically resistive plate positioned near the substrate down to a level lower than level of fluid in a fluid containment unit for collecting overflow fluid from the plating system for recirculation. The cross flow conduit can include channels cut into components of the plating cell to allow diverted flow, or can include an attachable diversion device mountable to an existing plating cell to divert flow downwards to the fluid containment unit. Embodiments also include a flow restrictor which may be a plate or a pressure relief valve for modulating flow of fluid in the cross flow conduit during plating.Type: ApplicationFiled: November 15, 2019Publication date: December 23, 2021Applicant: Lam Research CorporationInventors: Stephen J. Banik, II, Aaron Berke, Gabriel Hay Graham, Gregory J. Kearns, Lee Peng Chua, Bryan L. Buckalew
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Publication number: 20200270759Abstract: An electroplating apparatus includes an electrode at the bottom of a chamber, an ionically resistive element with through holes arranged horizontally at the top of the chamber, with a membrane in the middle. One or more panels extend vertically and parallelly from the membrane to the element and extend linearly across the chamber, forming a plurality of regions between the membrane and the element. A substrate with a protuberance extending along a chord of the substrate and contacting a top surface of the element is arranged above a first region. An electrolyte flowed between the substrate and the element descends into the first region via the through holes on a first side of the protuberance and ascends from the first region via the through holes on a second side of the protuberance, forcing air bubbles out from a portion of the element associated with the first region.Type: ApplicationFiled: May 8, 2020Publication date: August 27, 2020Inventors: Stephen J. BANIK, Bryan L. BUCKALEW, Gabriel Hay GRAHAM, Alfred BOSTICK, Sean WILBUR, John Floyd OSTROWSKI
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Patent number: 10655240Abstract: An electroplating apparatus includes an electrode at the bottom of a chamber, an ionically resistive element with through holes arranged horizontally at the top of the chamber, with a membrane in the middle. One or more panels extend vertically and parallelly from the membrane to the element and extend linearly across the chamber, forming a plurality of regions between the membrane and the element. A substrate with a protuberance extending along a chord of the substrate and contacting a top surface of the element is arranged above a first region. An electrolyte flowed between the substrate and the element descends into the first region via the through holes on a first side of the protuberance and ascends from the first region via the through holes on a second side of the protuberance, forcing air bubbles out from a portion of the element associated with the first region.Type: GrantFiled: May 1, 2018Date of Patent: May 19, 2020Assignee: LAM RESEARCH CORPORATIONInventors: Stephen J. Banik, Bryan L. Buckalew, Gabriel Hay Graham, Alfred Bostick, Sean Wilbur, John Floyd Ostrowski
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Publication number: 20190338440Abstract: An electroplating apparatus includes an electrode at the bottom of a chamber, an ionically resistive element with through holes arranged horizontally at the top of the chamber, with a membrane in the middle. One or more panels extend vertically and parallelly from the membrane to the element and extend linearly across the chamber, forming a plurality of regions between the membrane and the element. A substrate with a protuberance extending along a chord of the substrate and contacting a top surface of the element is arranged above a first region. An electrolyte flowed between the substrate and the element descends into the first region via the through holes on a first side of the protuberance and ascends from the first region via the through holes on a second side of the protuberance, forcing air bubbles out from a portion of the element associated with the first region.Type: ApplicationFiled: May 1, 2018Publication date: November 7, 2019Inventors: Stephen J. Banik, Bryan L. Buckalew, Gabriel Hay Graham, Alfred Bostick, Sean Wilbur, John Floyd Ostrowski
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Patent number: 10233556Abstract: The embodiments herein relate to methods and apparatus for electroplating one or more materials onto a substrate. In many cases the material is a metal and the substrate is a semiconductor wafer, though the embodiments are no so limited. Typically, the embodiments herein utilize a channeled plate positioned near the substrate, creating a cross flow manifold defined on the bottom by the channeled plate, on the top by the substrate, and on the sides by a cross flow confinement ring. Also typically present is an edge flow element configured to direct electrolyte into a corner formed between the substrate and substrate holder. During plating, fluid enters the cross flow manifold both upward through the channels in the channeled plate, and laterally through a cross flow side inlet positioned on one side of the cross flow confinement ring. The flow paths combine in the cross flow manifold and exit at the cross flow exit, which is positioned opposite the cross flow inlet.Type: GrantFiled: May 20, 2016Date of Patent: March 19, 2019Assignee: Lam Research CorporationInventors: Gabriel Hay Graham, Jacob Lee Hiester, Lee Peng Chua, Bryan L. Buckalew
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Publication number: 20180312991Abstract: An apparatus for electroplating metal on a semiconductor substrate with improved azimuthal uniformity includes in one aspect: a plating chamber configured to contain an electrolyte and an anode; a substrate holder configured to hold the semiconductor substrate; an ionically resistive ionically permeable element (“the element”) configured to be positioned proximate the substrate; and a shield configured for providing azimuthally asymmetrical shielding and positioned between the substrate holder and the element such that the closest distance between the substrate-facing surface of the shield and the working surface of the substrate is less than 2 mm. In some embodiments there is an electrolyte-filled gap between the substrate-facing surface of the element and the shield during electroplating. The substrate-facing surface of the shield may be contoured such that the distance from different positions of the shield to the substrate is varied.Type: ApplicationFiled: May 4, 2018Publication date: November 1, 2018Inventors: Gabriel Hay Graham, Lee Peng Chua, Steven T. Mayer, Robert Rash, Aaron Berke
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Patent number: 10094034Abstract: The embodiments herein relate to methods and apparatus for electroplating one or more materials onto a substrate. In many cases the material is a metal and the substrate is a semiconductor wafer, though the embodiments are no so limited. Typically, the embodiments herein utilize a channeled plate positioned near the substrate, creating a cross flow manifold defined on the bottom by the channeled plate, on the top by the substrate, and on the sides by a cross flow confinement ring. Also typically present is an edge flow element configured to direct electrolyte into a corner formed between the substrate and substrate holder. During plating, fluid enters the cross flow manifold both upward through the channels in the channeled plate, and laterally through a cross flow side inlet positioned on one side of the cross flow confinement ring. The flow paths combine in the cross flow manifold and exit at the cross flow exit, which is positioned opposite the cross flow inlet.Type: GrantFiled: October 27, 2015Date of Patent: October 9, 2018Assignee: Lam Research CorporationInventors: Gabriel Hay Graham, Bryan L. Buckalew, Steven T. Mayer, Robert Rash, James Isaac Fortner, Lee Peng Chua
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Patent number: 10094035Abstract: Various embodiments herein relate to methods and apparatus for electroplating material onto substrates. Often the substrate is a semiconductor substrate. Various techniques described herein utilize a number of different electroplating stages, where the convection conditions vary between the different electroplating stages. In many cases, at least one ultra-low convection stage is used. The ultra-low convection stage may be paired with an initial stage and a final stage that have higher convection conditions. By controlling the convection conditions as described herein, very uniform plating results can be achieved, even when differently sized and/or shaped features are provided on a single substrate.Type: GrantFiled: October 16, 2017Date of Patent: October 9, 2018Assignee: Lam Research CorporationInventors: Gabriel Hay Graham, Lee Peng Chua, Boon Kang Ong
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Publication number: 20180258546Abstract: Methods and apparatus for electroplating substrates are described herein. In some cases, an ionically resistive element is positioned near the substrate, creating a cross flow manifold between the ionically resistive element and the substrate. During plating, fluid may enter the cross flow manifold upward through the channels in the ionically resistive element, and (optionally) laterally through a cross flow side inlet. The flow paths combine in the cross flow manifold and exit at the cross flow outlet, which may be positioned opposite the cross flow inlet. In some embodiments, the ionically resistive element may include two or more flow regions, where the flow through each flow region is independently controllable. In these or other embodiments, an electrolyte jet may be included to flow additional electrolyte toward the substrate at a particular radial location or locations during plating. In some embodiments, the ionically resistive element may be omitted.Type: ApplicationFiled: March 9, 2017Publication date: September 13, 2018Inventors: Gabriel Hay Graham, Bryan L. Buckalew, Lee Peng Chua, Robert Rash, James Isaac Fortner, Aaron Berke
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Patent number: 9988733Abstract: An apparatus for electroplating metal on a semiconductor substrate with improved azimuthal uniformity includes in one aspect: a plating chamber configured to contain an electrolyte and an anode; a substrate holder configured to hold the semiconductor substrate; an ionically resistive ionically permeable element (“the element”) configured to be positioned proximate the substrate; and a shield configured for providing azimuthally asymmetrical shielding and positioned between the substrate holder and the element such that the closest distance between the substrate-facing surface of the shield and the working surface of the substrate is less than 2 mm. In some embodiments there is an electrolyte-filled gap between the substrate-facing surface of the element and the shield during electroplating. The substrate-facing surface of the shield may be contoured such that the distance from different positions of the shield to the substrate is varied.Type: GrantFiled: June 9, 2015Date of Patent: June 5, 2018Assignee: Lam Research CorporationInventors: Gabriel Hay Graham, Lee Peng Chua, Steven T. Mayer, Robert Rash, Aaron Berke
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Publication number: 20170058417Abstract: The embodiments herein relate to methods and apparatus for electroplating one or more materials onto a substrate. In many cases the material is a metal and the substrate is a semiconductor wafer, though the embodiments are no so limited. Typically, the embodiments herein utilize a channeled plate positioned near the substrate, creating a cross flow manifold defined on the bottom by the channeled plate, on the top by the substrate, and on the sides by a cross flow confinement ring. Also typically present is an edge flow element configured to direct electrolyte into a corner formed between the substrate and substrate holder. During plating, fluid enters the cross flow manifold both upward through the channels in the channeled plate, and laterally through a cross flow side inlet positioned on one side of the cross flow confinement ring. The flow paths combine in the cross flow manifold and exit at the cross flow exit, which is positioned opposite the cross flow inlet.Type: ApplicationFiled: October 27, 2015Publication date: March 2, 2017Inventors: Gabriel Hay Graham, Bryan L. Buckalew, Steven T. Mayer, Robert Rash, James Isaac Fortner, Lee Peng Chua
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Publication number: 20160362809Abstract: An apparatus for electroplating metal on a semiconductor substrate with improved azimuthal uniformity includes in one aspect: a plating chamber configured to contain an electrolyte and an anode; a substrate holder configured to hold the semiconductor substrate; an ionically resistive ionically permeable element (“the element”) configured to be positioned proximate the substrate; and a shield configured for providing azimuthally asymmetrical shielding and positioned between the substrate holder and the element such that the closest distance between the substrate-facing surface of the shield and the working surface of the substrate is less than 2 mm. In some embodiments there is an electrolyte-filled gap between the substrate-facing surface of the element and the shield during electroplating. The substrate-facing surface of the shield may be contoured such that the distance from different positions of the shield to the substrate is varied.Type: ApplicationFiled: June 9, 2015Publication date: December 15, 2016Inventors: Gabriel Hay Graham, Lee Peng Chua, Steven T. Mayer, Robert Rash, Aaron Berke
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Publication number: 20160265132Abstract: The embodiments herein relate to methods and apparatus for electroplating one or more materials onto a substrate. In many cases the material is a metal and the substrate is a semiconductor wafer, though the embodiments are no so limited. Typically, the embodiments herein utilize a channeled plate positioned near the substrate, creating a cross flow manifold defined on the bottom by the channeled plate, on the top by the substrate, and on the sides by a cross flow confinement ring. Also typically present is an edge flow element configured to direct electrolyte into a corner formed between the substrate and substrate holder. During plating, fluid enters the cross flow manifold both upward through the channels in the channeled plate, and laterally through a cross flow side inlet positioned on one side of the cross flow confinement ring. The flow paths combine in the cross flow manifold and exit at the cross flow exit, which is positioned opposite the cross flow inlet.Type: ApplicationFiled: May 20, 2016Publication date: September 15, 2016Inventors: Gabriel Hay Graham, Jacob Lee Hiester, Lee Peng Chua, Bryan L. Buckalew