Abstract: A sensor body for a flow through pressure sensor includes a strain gage surface to receive a strain gage. The strain gage surface has a curved section and a length extending along a portion of a length of the sensor body. A bore wall thickness is defined as a radial distance between the bore and an outer surface of the sensor body, including the strain gage surface. The curved section can have a substantially greater bore wall thickness over its area relative to the planar surface because a greater responsive surface area for strain measurement is available. Thus a larger strain gage may be used and pressure measurement accuracy increased.

Abstract: Non-Contact measurement of characteristics of p-n junctions includes illuminating an illumination area of a surface of a p-n junction with light, measuring a first junction photovoltage (JPV) signal from a first area of the p-n junction with a first electrode, measuring a second JPV signal from a second area with a second electrode, measuring a third JPV signal from a third area with a reference electrode, and determining a sheet resistance of the p-n junction top layer with a corrected first JPV signal, a corrected second JPV signal, a corrected first calibration JPV signal, a corrected second calibration JPV signal or the known sheet resistance of the calibration p-n junction.

Abstract: Non-contact measurement of one or more electrical response characteristics of a p-n junction includes illuminating a surface of the p-n junction with light of a first intensity having a modulation or pulsed characteristic sufficient to establish a steady-state condition in a junction photovoltage (JPV) of the p-n junction, measuring a first JPV from the p-n junction within the illumination area, illuminating the surface of the p-n junction with light of an additional intensity, measuring an additional photovoltage from the portion of the p-n junction within the illumination area, determining a photocurrent density of the p-n junction at the first intensity. The non-contact measurement further includes determining the forward voltage, the saturation current density, the ideality factor or one or more I-V curves with the measured first photovoltage, the measured additional photovoltage and/or the determined photocurrent density of the p-n junction.

Abstract: Methods and apparatus for providing measurements in p-n junctions and taking into account the lateral current for improved accuracy are disclosed. The lateral current may be controlled, allowing the spreading of the current to be reduced or substantially eliminated. Alternatively or additionally, the lateral current may be measured, allowing a more accurate normal current to be calculated by compensating for the measured spreading. In addition, the techniques utilized for controlling the lateral current and the techniques utilized for measuring the lateral current may also be implemented jointly.

Abstract: A sensor body for a flow through pressure sensor includes a strain gage surface to receive a strain gage. The strain gage surface has a curved section and a length extending along a portion of a length of the sensor body. A bore wall thickness is defined as a radial distance between the bore and an outer surface of the sensor body, including the strain gage surface. In comparison to other sensor bodies in which the strain gage surface is entirely planar, the curved section can have a substantially greater bore wall thickness over its area in comparison to the planar surface because a greater responsive surface area for strain measurement is available. Thus a larger strain gage may be used and pressure measurement accuracy increased. Other advantages include a wider range of pressure that can be measured with a single pressure sensor, and increased component reliability and lifetime.

Abstract: Non-Contact measurement of characteristics of p-n junctions includes illuminating an illumination area of a surface of a p-n junction with light, measuring a first junction photovoltage (JPV) signal from a first area of the p-n junction with a first electrode, measuring a second JPV signal from a second area with a second electrode, measuring a third JPV signal from a third area with a reference electrode, and determining a sheet resistance of the p-n junction top layer with a corrected first JPV signal, a corrected second JPV signal, a corrected first calibration JPV signal, a corrected second calibration JPV signal or the known sheet resistance of the calibration p-n junction.

Abstract: Methods and apparatus for providing measurements in p-n junctions and taking into account the lateral current for improved accuracy are disclosed. The lateral current may be controlled, allowing the spreading of the current to be reduced or substantially eliminated. Alternatively or additionally, the lateral current may be measured, allowing a more accurate normal current to be calculated by compensating for the measured spreading. In addition, the techniques utilized for controlling the lateral current and the techniques utilized for measuring the lateral current may also be implemented jointly.

Abstract: Non-contact measurement of one or more electrical response characteristics of a p-n junction includes illuminating a surface of the p-n junction with light of a first intensity having a modulation or pulsed characteristic sufficient to establish a steady-state condition in a junction photovoltage (JPV) of the p-n junction, measuring a first JPV from the p-n junction within the illumination area, illuminating the surface of the p-n junction with light of an additional intensity, measuring an additional photovoltage from the portion of the p-n junction within the illumination area, determining a photocurrent density of the p-n junction at the first intensity. The non-contact measurement further includes determining the forward voltage, the saturation current density, the ideality factor or one or more I-V curves with the measured first photovoltage, the measured additional photovoltage and/or the determined photocurrent density of the p-n junction.