Patents by Inventor Gabriel L. Donadio

Gabriel L. Donadio has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Memory cell array structures and methods of forming the same
    Patent number: 9773844
    Abstract: The present disclosure includes memory cell array structures and methods of forming the same. One such array includes a stack structure comprising a memory cell between a first conductive material and a second conductive material. The memory cell can include a select element and a memory element. The array can also include an electrically inactive stack structure located at an edge of the stack structure.
    Type: Grant
    Filed: December 16, 2015
    Date of Patent: September 26, 2017
    Assignee: Micron Technology, Inc.
    Inventors: Marcello Ravasio, Samuele Sciarrillo, Roberto Somaschini, Gabriel L. Donadio
  • MEMORY CELL ARRAY STRUCTURES AND METHODS OF FORMING THE SAME
    Publication number: 20160104748
    Abstract: The present disclosure includes memory cell array structures and methods of forming the same. One such array includes a stack structure comprising a memory cell between a first conductive material and a second conductive material. The memory cell can include a select element and a memory element. The array can also include an electrically inactive stack structure located at an edge of the stack structure.
    Type: Application
    Filed: December 16, 2015
    Publication date: April 14, 2016
    Inventors: Marcello Ravasio, Samuele Sciarrillo, Roberto Somaschini, Gabriel L. Donadio
  • Memory cell array structures and methods of forming the same
    Patent number: 9246100
    Abstract: The present disclosure includes memory cell array structures and methods of forming the same. One such array includes a stack structure comprising a memory cell between a first conductive material and a second conductive material. The memory cell can include a select element and a memory element. The array can also include an electrically inactive stack structure located at an edge of the stack structure.
    Type: Grant
    Filed: July 24, 2013
    Date of Patent: January 26, 2016
    Assignee: Micron Technology, Inc.
    Inventors: Marcello Ravasio, Samuele Sciarrillo, Roberto Somaschini, Gabriel L. Donadio
  • MEMORY CELL ARRAY STRUCTURES AND METHODS OF FORMING THE SAME
    Publication number: 20150029775
    Abstract: The present disclosure includes memory cell array structures and methods of forming the same. One such array includes a stack structure comprising a memory cell between a first conductive material and a second conductive material. The memory cell can include a select element and a memory element. The array can also include an electrically inactive stack structure located at an edge of the stack structure.
    Type: Application
    Filed: July 24, 2013
    Publication date: January 29, 2015
    Applicant: Micron Technology, Inc.
    Inventors: Marcello Ravasio, Samuele Sciarrillo, Roberto Somaschini, Gabriel L. Donadio