Patents by Inventor Gabriel M. Kuhn

Gabriel M. Kuhn has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Method for determining leak rate through a bond line of a MEMS device
    Patent number: 8579502
    Abstract: A method for optimizing direct wafer bond line width for reduction of parasitic capacitance in a MEMS device by reducing the width of a bond line between a first and a second wafer, exposing the MEMS device to a water vapor for a predetermined time period and at a first temperature capable of evaporating water, cooling the MEMS device at a second temperature capable of freezing the water, and operating the MEMS device at a third temperature capable of freezing the water to determine if there is discontinuity during operation.
    Type: Grant
    Filed: July 19, 2011
    Date of Patent: November 12, 2013
    Assignee: Northrop Grumman Corporation
    Inventors: Henry C. Abbink, Gabriel M. Kuhn, Howard Ge, Daryl Sakaida
  • METHOD FOR DETERMINING LEAK RATE THROUGH A BOND LINE OF A MEMS DEVICE
    Publication number: 20110271744
    Abstract: A method for optimizing direct wafer bond line width for reduction of parasitic capacitance in a MEMS device by reducing the width of a bond line between a first and a second wafer, exposing the MEMS device to a water vapor for a predetermined time period and at a first temperature capable of evaporating water, cooling the MEMS device at a second temperature capable of freezing the water, and operating the MEMS device at a third temperature capable of freezing the water to determine if there is discontinuity during operation.
    Type: Application
    Filed: July 19, 2011
    Publication date: November 10, 2011
    Applicant: Northrop Grumman Systems Corporation
    Inventors: Henry C. Abbink, Gabriel M. Kuhn, Howard Ge, Daryl Sakaida
  • Method for optimizing direct wafer bond line width for reduction of parasitic capacitance in MEMS accelerometers
    Patent number: 8007166
    Abstract: A method for optimizing direct wafer bond line width for reduction of parasitic capacitance in a MEMS device by reducing the width of a bond line between a first and a second wafer, exposing the MEMS device to a water vapor for a predetermined time period and at a first temperature capable of evaporating water, cooling the MEMS device at a second temperature capable of freezing the water, and operating the MEMS device at a third temperature capable of freezing the water to determine if there is discontinuity during operation.
    Type: Grant
    Filed: May 24, 2006
    Date of Patent: August 30, 2011
    Assignee: Northrop Grumman Systems Corporation
    Inventors: Henry C. Abbink, Gabriel M. Kuhn, Howard Ge, Daryl Sakaida