Abstract: The present application relates to a piezoelectric transducer preparation method and a piezoelectric transducer. The method comprises: first, preparing a bottom acoustic reflection layer on a carrier wafer; then preparing a top acoustic reflection layer on a piezoelectric wafer; then combining the side of the bottom acoustic reflection layer that is away from the carrier wafer with the side of the top acoustic reflection layer that is away from the piezoelectric wafer; and finally, thinning the piezoelectric wafer to form a piezoelectric transducer. The carrier wafer performs a carrying function, a piezoelectric film formed by thinning the piezoelectric wafer can be excited by acoustic vibration, and the top acoustic reflection layer and the bottom acoustic reflection layer can limit the acoustic vibration, such that the resulting piezoelectric transducer can work at a high frequency.

Abstract: The present application relates to a resonator and an electronic device. A high and low acoustic impedance alternating layer, a bottom temperature coefficient of frequency compensation layer, a bottom electrode layer, a piezoelectric layer, a top electrode layer and a top temperature coefficient of frequency compensation layer are sequentially stacked on a substrate by using a specific microfabrication process, to form a new resonator. The resonator can simultaneously show excellent characteristics of low loss, wide bandwidth, low temperature sensitivity and a small size through the special stack geometry, thereby having better operation reliability.