Patents by Inventor Gabriela Alva
Gabriela Alva has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 11658042Abstract: A method for patterning a material layer on a substrate includes forming a hard mask layer on a material layer disposed on a substrate, the material layer comprising a plurality of first layers and a plurality of second layers alternately formed over the substrate, performing a first etch process to form features in the material layer through the hard mask layer by supplying a first etching gas, and performing a second etch process to smooth sidewalls of the features formed in the material layer by suppling a second etching gas. The first etching gas is supplied continuously and the second etching gas is pulsed.Type: GrantFiled: July 7, 2021Date of Patent: May 23, 2023Assignee: Applied Materials, Inc.Inventors: Nancy Fung, Gabriela Alva
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Publication number: 20230095970Abstract: Embodiments of the present disclosure generally relate to methods for enhancing photoresist (PR) to have improved profile control. A method for treating a PR includes positioning a workpiece within a process region of a processing chamber, where the workpiece contains a patterned PR disposed on an underlayer, and treating the patterned PR by exposing the workpiece to a sequential infiltration synthesis (SIS) process to produce a treated patterned PR which is denser and harder than the patterned PR. The SIS process includes one or more infiltration cycles of exposing the patterned PR to a precursor containing silicon or boron, infiltrating the patterned PR with the precursor, purging to remove remnants of the precursor, exposing the patterned PR to an oxidizing agent, infiltrating the patterned PR with the oxidizing agent to produce oxide coating disposed on inner surfaces of the patterned PR, and purging to remove remnants of the oxidizing agent.Type: ApplicationFiled: August 22, 2022Publication date: March 30, 2023Inventors: Zhiyu HUANG, Chi-I LANG, Yung-chen LIN, Ho-yung HWANG, Gabriela ALVA, Wayne R. FRENCH
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Publication number: 20230072732Abstract: A system and method for patterning a material layer on a substrate includes forming a hard mask layer on a material layer disposed on a substrate, and etching the material layer through the hard mask layer by simultaneously supplying an etching gas mixture and an oxygen containing gas. The etching gas mixture is supplied continuously and the oxygen containing gas is pulsed.Type: ApplicationFiled: November 14, 2022Publication date: March 9, 2023Inventors: Nancy FUNG, Gabriela ALVA
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Patent number: 11527414Abstract: A method for patterning a material layer on a substrate includes forming a hard mask layer on a material layer disposed on a substrate, and etching the material layer through the hard mask layer by simultaneously supplying an etching gas mixture and an oxygen containing gas. The etching gas mixture is supplied continuously and the oxygen containing gas is pulsed.Type: GrantFiled: July 7, 2021Date of Patent: December 13, 2022Assignee: APPLIED MATERIALS, INC.Inventors: Nancy Fung, Gabriela Alva
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Publication number: 20220359289Abstract: Apparatuses and methods to provide a fully self-aligned via are described. A first metallization layer comprises a set of first conductive lines extending along a first direction on a first insulating layer on a substrate, the set of first conductive lines recessed below a top portion of the first insulating layer. A capping layer is on the first insulating layer, and a second insulating layer is on the capping layer. A second metallization layer comprises a set of second conductive lines on the second insulating layer and on a third insulating layer above the first metallization layer. The set of second conductive lines extend along a second direction that crosses the first direction at an angle. At least one via is between the first metallization layer and the second metallization layer. The via is self-aligned along the second direction to one of the first conductive lines. The tapering angle of the via opening may be in a range of from about 60° to about 120°.Type: ApplicationFiled: July 26, 2022Publication date: November 10, 2022Applicant: Micromaterials LLCInventors: Regina Freed, Madhur Sachan, Susmit Singha Roy, Gabriela Alva, Ho-yung David Hwang, Uday Mitra, El Mehdi Bazizi, Angada Bangalore Sachid, He Ren, Sushant Mittal
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Patent number: 11437274Abstract: Apparatuses and methods to provide a fully self-aligned via are described. A first metallization layer comprises a set of first conductive lines extending along a first direction on a first insulating layer on a substrate, the set of first conductive lines recessed below a top portion of the first insulating layer. A capping layer is on the first insulating layer, and a second insulating layer is on the capping layer. A second metallization layer comprises a set of second conductive lines on the second insulating layer and on a third insulating layer above the first metallization layer. The set of second conductive lines extend along a second direction that crosses the first direction at an angle. At least one via is between the first metallization layer and the second metallization layer. The via is self-aligned along the second direction to one of the first conductive lines. The tapering angle of the via opening may be in a range of from about 60° to about 120°.Type: GrantFiled: September 14, 2020Date of Patent: September 6, 2022Assignee: Micromaterials LLCInventors: Regina Freed, Madhur Sachan, Susmit Singha Roy, Gabriela Alva, Ho-yung David Hwang, Uday Mitra, El Mehdi Bazizi, Angada Bangalore Sachid, He Ren, Sushant Mittal
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Publication number: 20220189771Abstract: A structure includes an underlayer formed on a substrate, a mandrel layer formed on the underlayer, and a spacer layer formed on the mandrel layer. The underlayer includes a first material, and the spacer layer includes a second material. The first material is resistant to etching gases used in a first etch process to remove portions of the spacer layer and a second etch process to remove the mandrel layer.Type: ApplicationFiled: January 25, 2021Publication date: June 16, 2022Inventors: Gene LEE, Gabriela ALVA
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Publication number: 20220059365Abstract: A method for patterning a material layer on a substrate includes forming a hard mask layer on a material layer disposed on a substrate, the material layer comprising a plurality of first layers and a plurality of second layers alternately formed over the substrate, performing a first etch process to form features in the material layer through the hard mask layer by supplying a first etching gas, and performing a second etch process to smooth sidewalls of the features formed in the material layer by suppling a second etching gas. The first etching gas is supplied continuously and the second etching gas is pulsed.Type: ApplicationFiled: July 7, 2021Publication date: February 24, 2022Inventors: Nancy FUNG, Gabriela ALVA
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Publication number: 20220059366Abstract: A method for patterning a material layer on a substrate includes forming a hard mask layer on a material layer disposed on a substrate, and etching the material layer through the hard mask layer by simultaneously supplying an etching gas mixture and an oxygen containing gas. The etching gas mixture is supplied continuously and the oxygen containing gas is pulsed.Type: ApplicationFiled: July 7, 2021Publication date: February 24, 2022Inventors: Nancy FUNG, Gabriela ALVA
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Publication number: 20210090952Abstract: Apparatuses and methods to provide a fully self-aligned via are described. A first metallization layer comprises a set of first conductive lines extending along a first direction on a first insulating layer on a substrate, the set of first conductive lines recessed below a top portion of the first insulating layer. A capping layer is on the first insulating layer, and a second insulating layer is on the capping layer. A second metallization layer comprises a set of second conductive lines on the second insulating layer and on a third insulating layer above the first metallization layer. The set of second conductive lines extend along a second direction that crosses the first direction at an angle. At least one via is between the first metallization layer and the second metallization layer. The via is self-aligned along the second direction to one of the first conductive lines. The tapering angle of the via opening may be in a range of from about 60° to about 120°.Type: ApplicationFiled: September 14, 2020Publication date: March 25, 2021Applicant: Micromaterials LLCInventors: Regina Freed, Madhur Sachan, Susmit Singha Roy, Gabriela Alva, Ho-yung David Hwang, Uday Mitra, El Mehdi Bazizi, Angada Bangalore Sachid, He Ren, Sushant Mittal