Abstract: A method for producing a semiconductor structure by conducting controlled co-implanting of at least first and second different atomic species into a donor substrate to create an embrittlement zone which defines a thin layer of donor material to be transferred. Implantation energies are selected so that the first and second species are respectively distributed in the donor wafer according to a repartition profile that presents a spreading zone in which each species is mainly distributed at a maximum concentration peak. The implantation doses and energies of the first and second species are selected such that the second species is implanted deeper in the embrittlement zone than the first species spreading zone. The donor substrate is detached at the embrittlement zone to transfer the thin layer to the support substrate while minimizing blister formation in and surface roughness of the transferred layer.

Abstract: The invention relates to a method for producing a semiconductor structure which comprises conducting controlled co-implanting of at least first and second different atomic species into a face of donor substrate to create an embrittlement zone which defines a thin layer of donor material to be transferred. This step is conducted by selecting implantation energies so that the coimplanting is made under conditions such that the first and second species are respectively distributed in the donor wafer according to a repartition profile that presents a spreading zone in which each species is mainly distributed and at a maximum concentration peak.