Abstract: A common-mode suppressor for eliminating common-mode noise in high frequency differential data transmission systems and an associated method includes a long coiled differential transmission line configured to transfer data between a source and a load. The differential transmission line comprises a first conductive wire and a second conductive wire which are inductively and capacitively coupled and are laterally aligned or vertically aligned with each other. Further, the differential transmission line is matched for differential signals and un-matched for common-mode noise.

Abstract: A common-mode suppressor for eliminating common-mode noise in high frequency differential data transmission systems and an associated method includes a long coiled differential transmission line configured to transfer data between a source and a load. The differential transmission line comprises a first conductive wire and a second conductive wire which are inductively and capacitively coupled and are laterally aligned or vertically aligned with each other. Further, the differential transmission line is matched for differential signals and un-matched for common-mode noise.

Abstract: A semiconductor device comprises a semiconductor substrate, an anorganic isolation layer on the semiconductor substrate and a metallization layer on the anorganic isolation layer. The metallization layer comprises a fuse structure. At least in an area of the fuse structure the metallization layer and the anorganic isolation layer have a common interface.

Abstract: An electrical device includes a semiconductor material. The semiconductor material includes a first region of the semiconductor material having a first conductivity type, a second region of the semiconductor material having a second conductivity type complementary to the first conductivity type and an intermediate region of the semiconductor material between the first region and the second region. The first and second regions lie next to each other the intermediate region so as to form a diode structure. A shape of the intermediate region tapers from the first region to the second region.

Abstract: A semiconductor device comprises a semiconductor substrate, an anorganic isolation layer on the semiconductor substrate and a metallization layer on the anorganic isolation layer. The metallization layer comprises a fuse structure. At least in an area of the fuse structure the metallization layer and the anorganic isolation layer have a common interface.

Abstract: An electrical device includes a semiconductor material. The semiconductor material includes a first region of the semiconductor material having a first conductivity type, a second region of the semiconductor material having a second conductivity type complementary to the first conductivity type and an intermediate region of the semiconductor material between the first region and the second region. The first and second regions lie next to each other the intermediate region so as to form a diode structure. A shape of the intermediate region tapers from the first region to the second region.

Abstract: A semiconductor device comprises a semiconductor substrate, an anorganic isolation layer on the semiconductor substrate and a metallization layer on the anorganic isolation layer. The metallization layer comprises a fuse structure. At least in an area of the fuse structure the metallization layer and the anorganic isolation layer have a common interface.

Abstract: A semiconductor device comprises a semiconductor substrate, an anorganic isolation layer on the semiconductor substrate and a metallization layer on the anorganic isolation layer. The metallization layer comprises a fuse structure. At least in an area of the fuse structure the metallization layer and the anorganic isolation layer have a common interface.