Abstract: The present invention relates to memristive devices including a resistance-switching element and a barrier element. In particular examples, the barrier element is a monolayer of a transition metal chalcogenide that sufficiently inhibits diffusion of oxygen atoms or ions out of the switching element. As the location of these atoms and ions determine the state of the device, inhibiting diffusion would provide enhanced state retention and device reliability. Other types of barrier elements, as well as methods for forming such elements, are described herein.

Abstract: In one embodiment of the present invention, a semiconductor device within an integrated circuit includes an active region associated with a contact structure of the semiconductor device. The semiconductor device also includes a conductive layer providing electrical conductivity between the contact structure of the semiconductor device and one or more other semiconductor devices within the integrated circuit. The semiconductor device also includes a number of carbon nanotubes connected to the active region at first ends of the carbon nanotubes, connected to the conductive layer at second ends of the carbon nanotubes, and extending within a via of the contact structure from the active region to the conductive layer to provide electrical conductivity between the active region and the conductive layer.