Abstract: A stretchable strain sensor includes a light-emitting element, an optical structure, and a photo-detective element. The stretchable strain sensor is located in a path of light emitted from the light-emitting element. The optical structure is configured to have optical properties that change in response to stretching of at least a portion of the stretchable strain sensor. The photo-detective element is configured to detect light transmitted through the optical structure or reflected through the optical structure.

Abstract: A stretchable strain sensor includes a light-emitting element, an optical structure, and a photo-detective element. The stretchable strain sensor is located in a path of light emitted from the light-emitting element. The optical structure is configured to have optical properties that change in response to stretching of at least a portion of the stretchable strain sensor. The photo-detective element is configured to detect light transmitted through the optical structure or reflected through the optical structure.

Abstract: A stretchable panel includes a stretchable substrate including a first elastomer having a first elastic modulus, a non-stretchable pattern covering a portion of the stretchable substrate and including a particular material that includes an organic, inorganic, or organic-inorganic material, the particular material having a second elastic modulus higher than the first elastic modulus, a plurality of unit elements arranged on the non-stretchable pattern, a plurality of pixel circuits configured to independently operate separate, respective unit elements, a connection electrode configured to electrically connect each of the unit elements and each of the pixel circuits, and an elastic structure overlapped with an edge portion of the non-stretchable pattern along a thickness direction of the stretchable substrate and comprising a second elastomer having a third elastic modulus higher than the first elastic modulus and lower than the second elastic modulus, and an electronic device including the same.

Abstract: An organic sensor includes a first electrode, a second electrode, an organic active layer between the first electrode and the second electrode, and a protective layer between the organic active layer and the second electrode. Capacitance provided of the first electrode, the protective layer, and the second electrode is less than or equal to about 2×10?10 F.

Abstract: A stretchable strain sensor may exhibit wavelength selectivity according to a thickness change of a thickness of the stretchable strain sensor, in a thickness direction extending parallel to the thickness of the stretchable strain sensor, due to elongation of the stretchable strain sensor in an elongation direction extending perpendicular to the thickness direction. The stretchable strain sensor may have an emission spectrum that changes according to strain variation of a strain on the stretchable strain sensor.

Abstract: Provided are a flexible display panel and an electronic device including the same, in the flexible display panel that is foldable, bendable, or rollable along at least one axis extending in a first direction, the flexible display panel including a substrate including a stretchable region and a non-stretchable region, a plurality of pixel circuits repeatedly arranged on the substrate, and a unit element array including unit elements repeatedly arranged on the substrate and electrically connected to each of the pixel circuits, wherein each of the pixel circuits includes a plurality of thin film transistors, the plurality of thin film transistors include a first thin film transistor on the stretchable region of the substrate, and a channel length direction of the first thin film transistor is substantially parallel to the first direction flexible display panel.

Abstract: A bio imaging system includes a plurality of light emitters configured to irradiate light, and a plurality of sensors configured to detect light reflected by an internal tissue of a living body. Each sensor includes a plurality of photo-detecting elements having different absorption peak wavelengths in relation to each other.

Abstract: A compound of Chemical Formula 1, and a photoelectric device, an image sensor, and an electronic device including the same are disclosed: In Chemical Formula 1, each substituent is the same as defined in the detailed description.

Abstract: An organic image sensor may be configured to obtain a color signal associated with a particular wavelength spectrum of light absorbed by the organic image sensor may omit a color filter. The organic image sensor may include an organic photoelectric conversion layer including a first material and a second material. The first material may absorb a first wavelength spectrum of light, and the second material may absorb a second wavelength spectrum of light. The organic photoelectric conversion layer may include stacked upper and lower layers, and the respective material compositions of the lower and upper layers may be first and second mixtures of the first and second materials. A ratio of the first material to the second material in the first mixture may be greater than 1/1, and a ratio of the first material to the second material in the second mixture may be less than 1/1.

Abstract: A bio imaging system includes a plurality of light emitters configured to irradiate light, and a plurality of sensors configured to detect light reflected by an internal tissue of a living body. Each sensor includes a plurality of photo-detecting elements having different absorption peak wavelengths in relation to each other.

Abstract: A compound of Chemical Formula 1, and an organic photoelectric device, an image sensor, and an electronic device including the same are disclosed: In Chemical Formula 1, each substituent is the same as defined in the detailed description.

Abstract: Disclosed are an organic photoelectric device including a first electrode and a second electrode facing each other and a photoelectric conversion layer between the first electrode and the second electrode, wherein the photoelectric conversion layer includes a p-type semiconductor, an n-type semiconductor, and an n-type dopant represented by Chemical Formula 1, and an image sensor and an electronic device including the same. Definitions of Chemical Formula 1 are the same as defined in the detailed description.

Abstract: An OLED display panel may include a substrate, an OLED light emitter on the substrate and configured to emit light, and a visible light sensor on the substrate and configured to detect at least a portion of the emitted light based on reflection of the portion of the emitted light from a recognition target. The visible light sensor is in a non-light emitting region adjacent to the OLED light emitter so as to be horizontally aligned with the OLED light emitter in a horizontal direction extending parallel to an upper surface of the substrate, or between the substrate and a non-light emitting region adjacent to the OLED light emitter such that the visible light sensor is vertically aligned with the non-light emitting region in a vertical direction extending perpendicular to the upper surface of the substrate.

Abstract: A compound of Chemical Formula 1, and an organic photoelectric device, an image sensor, and an electronic device including the same are disclosed: In Chemical Formula 1, each substituent is the same as defined in the detailed description.

Abstract: An image sensor may include a photoelectric device configured to selectively absorb light associated with a first color of three primary colors, a semiconductor substrate stacked with the photoelectric device and including first and second photo-sensing devices configured to sense light associated with second and third colors of the three primary colors, respectively, a first color filter corresponding to the first photo-sensing device and configured to selectively transmit light of the first wavelength spectrum, a second color filter corresponding to the second photo-sensing device and configured to selectively transmit light associated with a mixed color of the first color and the third color, and a first insulating layer between the photoelectric device and the semiconductor substrate and corresponding to the second photo-sensing device, and configured to selectively reflect light of a part of visible light.

Abstract: An OLED display panel may include a substrate, an OLED light emitter on the substrate and configured to emit light, and a visible light sensor on the substrate and configured to detect at least a portion of the emitted light based on reflection of the portion of the emitted light from a recognition target. The visible light sensor is in a non-light emitting region adjacent to the OLED light emitter so as to be horizontally aligned with the OLED light emitter in a horizontal direction extending parallel to an upper surface of the substrate, or between the substrate and a non-light emitting region adjacent to the OLED light emitter such that the visible light sensor is vertically aligned with the non-light emitting region in a vertical direction extending perpendicular to the upper surface of the substrate.

Abstract: A compound of Chemical Formula 1, and a photoelectric device, an image sensor, and an electronic device including the same are disclosed: In Chemical Formula 1, each substituent is the same as defined in the detailed description.

Abstract: An organic photoelectronic device includes a first electrode and a second electrode facing each other and a light-absorption layer between the first electrode and the second electrode and including a first region closest to the first electrode, the first region having a first composition ratio (p1/n1) of a p-type semiconductor relative to an n-type semiconductor, a second region closest to the second electrode, the second region having a second composition ratio (p2/n2) of the p-type semiconductor relative to the n-type semiconductor, and a third region between the first region and the second region in a thickness direction, the third region having a third composition ratio (p3/n3) of the p-type semiconductor relative to the n-type semiconductor that is greater or less than the first composition ratio (p1/n1) and the second composition ratio (p2/n2).

Abstract: A fingerprint sensor may include first and second electrodes, a light absorption layer isolated from direct contact with the first and second electrodes, and an insulation layer between the first electrode and the light absorption layer and further between the second electrode and the light absorption layer. A reflective layer may be between the light absorption layer and the first electrode. The insulation layer may include a first insulation layer between the first electrode and the light absorption layer, and a second insulation layer between the second electrode and the light absorption layer. A fingerprint sensor array including a plurality of fingerprint sensors may at least partially expose a plurality of sub-pixels of a display panel on which the fingerprint sensor array is located.

Abstract: Disclosed are a photodiode element, and a sensor and an electronic device including the same. The photodiode element includes a first electrode, a second electrode facing the first electrode, a photoelectric conversion layer between the first electrode and the second electrode and having an absorption spectrum in a first wavelength spectrum, a light-emitting layer between the photoelectric conversion layer and the second electrode and having an emission peak wavelength belonging to the first wavelength spectrum, and a first charge transport layer between the photoelectric conversion layer and the light-emitting layer.