Abstract: A pixel circuit comprising: a light-sensing element; a first transistor having its control node coupled to a sense node and its source coupled to a readout path of the pixel circuit; and a reset voltage correction circuit comprising: a first switch configured to selectively couple an input node of the reset voltage correction circuit to a correction node, the input node being connected to the sense node or to the source of the first transistor, the correction node being coupled by a capacitance to the sense node; and a second switch configured to selectively couple the correction node to a reset voltage.

Abstract: A pixel circuit comprising: a light-sensing element; a first transistor having its control node coupled to a sense node and its source coupled to a readout path of the pixel circuit; and a reset voltage correction circuit comprising: a first switch configured to selectively couple an input node of the reset voltage correction circuit to a correction node, the input node being connected to the sense node or to the source of the first transistor, the correction node being coupled by a capacitance to the sense node; and a second switch configured to selectively couple the correction node to a reset voltage.

Abstract: An image sensor including a plurality of photosites formed inside and on top of a semiconductor substrate, each photosite including: a first photosensitive area formed in the semiconductor substrate and adapted to capturing light in a first wavelength range; a second photosensitive area formed in the semiconductor substrate vertically in line with the first photosensitive area and adapted to capturing light in a second wavelength range, different from the first wavelength range; a first area of collection of charges photogenerated in the first and second photosensitive areas, arranged on the side of a surface of the substrate opposite to the first photosensitive area; a first transfer gate vertically extending from the first photosensitive area to said surface, adapted to transferring the charges photogenerated in the first photosensitive area to the second photosensitive area; and a second transfer gate, horizontally extending on said surface vertically in line with the second photosensitive area, adapted to

Abstract: The present description concerns a photosite including: a photoconversion area configured to convert light into charges; at least one assembly of a first node and of a first charge flow path including a first switch configured to allow the flowing of charges from the photoconversion area to the first node of said assembly when said first switch is on and block the passage of charges between the photoconversion area and the first node of said assembly when said first switch is off; and a second charge flow path between said photoconversion area and a second node of the photosite, wherein the first and second paths are configured so that each first path holds the priority over the second path when the first switch of said first path is on.

Abstract: A device of acquisition of a depth image of a scene by detection of a reflected light signal. The device includes a stack of a first sensor and of a second sensor. The first sensor includes first depth photosites configured to acquire at least one first sample of charges photogenerated during first time periods. The second sensor includes second depth photosites arranged opposite the first photosites, the second photosites being configured to acquire at least one second sample of charges photogenerated during second time periods offset with respect to the first time periods by a first constant phase shift. The first sensor or the second sensor further includes third photosites configured to acquire at least one third sample during third time periods offset with respect to the first time periods by a second constant phase shift.

Abstract: A device of acquisition of a depth image and of a 2D image of a scene, including depth photosites and capacitors, each depth photosite including a photodiode capable of detecting a reflected light signal, and at least one sense node coupled to the photodiode by a single transistor. Each capacitor is connected between the sense nodes of two photosites or between two sense nodes of a same photosite. Depth photosites supply the first plate of each capacitor with at least one first sample of charges photogenerated during first time periods, and supplying the second plate of each capacitor with a second sample of charges photogenerated during second time periods. Depth photosites supply the first plate of each capacitor with at least one third sample of charges photogenerated during third time periods.

Abstract: A pixel circuit comprising: a light-sensing element; a first transistor having its control node coupled to a sense node and its source coupled to a readout path of the pixel circuit; and a reset voltage correction circuit comprising: a first switch configured to selectively couple an input node of the reset voltage correction circuit to a correction node, the input node being connected to the sense node or to the source of the first transistor, the correction node being coupled by a capacitance to the sense node; and a second switch configured to selectively couple the correction node to a reset voltage.

Abstract: A Single-Photon Avalanche Diode (SPAD) device an active region configured to detect incident radiation, a first radiation blocking ring surrounding the active region, and a radiation blocking cover configured to shield part of the active region from the incident radiation. The radiation blocking cover is configured to define a second radiation blocking ring vertically spaced apart from the first radiation blocking ring. The SPAD device may include radiation blocking vias extending between the first and second radiation blocking rings.

Abstract: A Single-Photon Avalanche Diode (SPAD) device an active region configured to detect incident radiation, a first radiation blocking ring surrounding the active region, and a radiation blocking cover configured to shield part of the active region from the incident radiation. The radiation blocking cover is configured to define a second radiation blocking ring vertically spaced apart from the first radiation blocking ring. The SPAD device may include radiation blocking vias extending between the first and second radiation blocking rings.