Patents by Inventor Gaetano Parascandolo

Gaetano Parascandolo has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Multiple-junction photoelectric device and its production process
    Patent number: 9337367
    Abstract: A multiple-junction photoelectric device includes sequentially, a substrate, a first conducting layer, at least two elementary photoelectric devices, at least one of the elementary photoelectric devices being made of microcrystalline silicon, and a second conducting layer. The first conducting layer has a surface facing the microcrystalline silicon elementary photoelectric device such that the surface: has a lateral feature size bigger than 100 nm, and a root-element-square roughness bigger than 40 nm, includes inclined elementary surfaces such that ?50 is greater than 20°, where ?50 is the angle for which 50% of the elementary surfaces of the surface of the first conducting layer have an inclination equal to or less than this angle, and includes valleys formed between two elementary surfaces and having a radius of curvature smaller than 100 nm.
    Type: Grant
    Filed: June 23, 2011
    Date of Patent: May 10, 2016
    Assignee: ECOLE POLYTECHNIQUE FEDERALE DE LAUSANNE
    Inventors: Peter Cuony, Matthieu Despeisse, Christophe Ballif, Gaetano Parascandolo
  • MULTIPLE-JUNCTION PHOTOELECTRIC DEVICE AND ITS PRODUCTION PROCESS
    Publication number: 20130146131
    Abstract: A multiple-junction photoelectric device includes sequentially, a substrate, a first conducting layer, at least two elementary photoelectric devices, at least one of the elementary photoelectric devices being made of microcrystalline silicon, and a second conducting layer. The first conducting layer has a surface facing the microcrystalline silicon elementary photoelectric device such that the surface: has a lateral feature size bigger than 100 nm, and a root-element-square roughness bigger than 40 nm, includes inclined elementary surfaces such that ?50 is greater than 20°, where ?50 is the angle for which 50% of the elementary surfaces of the surface of the first conducting layer have an inclination equal to or less than this angle, and includes valleys formed between two elementary surfaces and having a radius of curvature smaller than 100 nm.
    Type: Application
    Filed: June 23, 2011
    Publication date: June 13, 2013
    Applicant: ECOLE POLYTECHNIQUE FEDERALE DE LAUSANNE (EPFL)
    Inventors: Peter Cuony, Matthieu Despeisse, Christophe Ballif, Gaetano Parascandolo