Abstract: A single channel-based multi-functional light emitting diode lamp driving system includes: first and second light source groups distinguished for each lamp function thereof; a single LED lamp driving module adjusting an input voltage to a voltage required for each lamp function and to apply it to the first and second light source groups; a switching module controlling on or off of the first and second light source groups; and a control module controlling light amounts of the first and second light source groups by performing time-division control on an on or off time of the switching module in conjunction with the LED lamp driving module, wherein the control module is configured to perform time division turn-on control on the first and second light source groups by controlling at least one of a current value applied to the first and second light source groups or a duty ratio thereof in a high-beam passing mode.

Abstract: A single channel-based multi-functional light emitting diode lamp driving system includes: first and second light source groups distinguished for each lamp function thereof; a single LED lamp driving module adjusting an input voltage to a voltage required for each lamp function and to apply it to the first and second light source groups; a switching module controlling on or off of the first and second light source groups; and a control module controlling light amounts of the first and second light source groups by performing time-division control on an on or off time of the switching module in conjunction with the LED lamp driving module, wherein the control module is configured to perform time division turn-on control on the first and second light source groups by controlling at least one of a current value applied to the first and second light source groups or a duty ratio thereof in a high-beam passing mode.

Abstract: A system for driving a multi-functional light emitting diode (LED) lamp includes a first light source group and a second light source group classified depending on lamp functions, a single LED lamp driving device to regulate an input voltage to a voltage necessary for each lamp function and to apply the voltage to the first light source group and the second light source group, a switching device to control an On/Off state of the first light source group and the second light source group, and a control device to time-division control a time to turn on/off the switching device by internetworking with the LED lamp driving device and to control a light quantity of the first light source group and the second light source group.

Abstract: A system for driving a multi-functional light emitting diode (LED) lamp includes a first light source group and a second light source group classified depending on lamp functions, a single LED lamp driving device to regulate an input voltage to a voltage necessary for each lamp function and to apply the voltage to the first light source group and the second light source group, a switching device to control an On/Off state of the first light source group and the second light source group, and a control device to time-division control a time to turn on/off the switching device by internetworking with the LED lamp driving device and to control a light quantity of the first light source group and the second light source group.

Abstract: A semiconductor memory device includes conductive films and insulating layers alternately stacked on a substrate, substantially vertical channel layers penetrating the conductive films and the insulating layers, multilayer films including a charge storage film interposed between the conductive films and the substantially vertical channel layers, and a first anti-diffusion film formed on etched surfaces of the conductive films.

Abstract: A semiconductor memory device includes conductive films and insulating layers alternately stacked on a substrate, substantially vertical channel layers penetrating the conductive films and the insulating layers, multilayer films including a charge storage film interposed between the conductive films and the substantially vertical channel layers, and a first anti-diffusion film formed on etched surfaces of the conductive films.

Abstract: A method of manufacturing a flash memory device. According to the invention, a floating gate can be formed and a distance between cells can be secured sufficiently by using one conductive layer without using a SA-STI process that cannot be applied to the manufacture process of high-integrated semiconductor devices. It is therefore possible to minimize an interference phenomenon between neighboring cells. Furthermore, an isolation film is etched after a photoresist film covering only a high-voltage transistor region is formed, or a gate oxide film is formed after a semiconductor substrate is etched at a thickness, which is the same as that of the gate oxide film of the high-voltage transistor region, so that a step between the cell region and the high-voltage transistor region is the same. Accordingly, the coupling ratio can be increased even by the gate oxide film of the high-voltage transistor region, which is thicker than the tunnel oxide film of the cell region.

Abstract: A method of manufacturing a flash memory device. According to the invention, a floating gate can be formed and a distance between cells can be secured sufficiently by using one conductive layer without using a SA-STI process that cannot be applied to the manufacturing process of highly integrated semiconductor devices. It is therefore possible to minimize interference between neighboring cells.

Abstract: A method of manufacturing a flash memory device. According to the invention, a floating gate can be formed and a distance between cells can be secured sufficiently by using one conductive layer without using a SA-STI process that cannot be applied to the manufacture process of high-integrated semiconductor devices. It is therefore possible to minimize an interference phenomenon between neighboring cells. Furthermore, an isolation film is etched after a photoresist film covering only a high-voltage transistor region is formed, or a gate oxide film is formed after a semiconductor substrate is etched at a thickness, which is the same as that of the gate oxide film of the high-voltage transistor region, so that a step between the cell region and the high-voltage transistor region is the same. Accordingly, the coupling ratio can be increased even by the gate oxide film of the high-voltage transistor region, which is thicker than the tunnel oxide film of the cell region.