Patents by Inventor Ga Hee Lee
Ga Hee Lee has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20250089557Abstract: Provided are a compound represented by Formula 24, an organic electric element comprising a first electrode, a second electrode, and an organic material layer formed between the first electrode and the second electrode and comprising the compound of Formula 24, and an electronic device thereof, the element and device having improved driving voltage, luminous efficiency and lifetime from the employment of the compound.Type: ApplicationFiled: November 21, 2024Publication date: March 13, 2025Applicant: DUK SAN NEOLUX CO., LTD.Inventors: Mi Young CHAE, Hye Min CHO, Min Ji JO, Soung Yun MUN, Sun Hee LEE, Nam Geol LEE, Hyung Dong LEE, Dae Hwan OH, Ga Eun LEE, Sang Yong PARK
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Patent number: 11844158Abstract: A single channel-based multi-functional light emitting diode lamp driving system includes: first and second light source groups distinguished for each lamp function thereof; a single LED lamp driving module adjusting an input voltage to a voltage required for each lamp function and to apply it to the first and second light source groups; a switching module controlling on or off of the first and second light source groups; and a control module controlling light amounts of the first and second light source groups by performing time-division control on an on or off time of the switching module in conjunction with the LED lamp driving module, wherein the control module is configured to perform time division turn-on control on the first and second light source groups by controlling at least one of a current value applied to the first and second light source groups or a duty ratio thereof in a high-beam passing mode.Type: GrantFiled: November 18, 2021Date of Patent: December 12, 2023Assignees: HYUNDAI MOTOR COMPANY, KIA CORPORATION, SL CORPORATIONInventors: Choong Seob Park, So Jeong Kang, Jin Hyun Kim, Seok Hyun Hwang, Ga Hee Lee, Chul Sung Lee
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Publication number: 20230072464Abstract: A single channel-based multi-functional light emitting diode lamp driving system includes: first and second light source groups distinguished for each lamp function thereof; a single LED lamp driving module adjusting an input voltage to a voltage required for each lamp function and to apply it to the first and second light source groups; a switching module controlling on or off of the first and second light source groups; and a control module controlling light amounts of the first and second light source groups by performing time-division control on an on or off time of the switching module in conjunction with the LED lamp driving module, wherein the control module is configured to perform time division turn-on control on the first and second light source groups by controlling at least one of a current value applied to the first and second light source groups or a duty ratio thereof in a high-beam passing mode.Type: ApplicationFiled: November 18, 2021Publication date: March 9, 2023Applicants: HYUNDAI MOTOR COMPANY, Kia Corporation, SL CorporationInventors: Choong Seob PARK, So Jeong KANG, Jin Hyun KIM, Seok Hyun HWANG, Ga Hee LEE, Chul Sung LEE
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Patent number: 11501766Abstract: Provided are a device and a method for providing a response message to a voice input of a user. The method, performed by a device, of providing a response message to a voice input of a user includes: receiving the voice input of the user; determining a destination of the user and an intention of the user, by analyzing the received voice input; obtaining association information related to the destination; generating the response message that recommends a substitute destination related to the intention of the user, based on the obtained association information; and displaying the generated response message.Type: GrantFiled: November 14, 2017Date of Patent: November 15, 2022Assignee: SAMSUNG ELECTRONICS CO., LTD.Inventors: Ga-hee Lee, In-dong Lee, Se-chun Kang, Hyung-rai Oh
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Patent number: 11395395Abstract: A system for driving a multi-functional light emitting diode (LED) lamp includes a first light source group and a second light source group classified depending on lamp functions, a single LED lamp driving device to regulate an input voltage to a voltage necessary for each lamp function and to apply the voltage to the first light source group and the second light source group, a switching device to control an On/Off state of the first light source group and the second light source group, and a control device to time-division control a time to turn on/off the switching device by internetworking with the LED lamp driving device and to control a light quantity of the first light source group and the second light source group.Type: GrantFiled: July 7, 2021Date of Patent: July 19, 2022Assignees: HYUNDAI MOTOR COMPANY, KIA CORPORATION, SL CORPORATIONInventors: Choong Seob Park, Jin Hyun Kim, So Jeong Kang, Chul Sung Lee, Ga Hee Lee
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Publication number: 20220117063Abstract: A system for driving a multi-functional light emitting diode (LED) lamp includes a first light source group and a second light source group classified depending on lamp functions, a single LED lamp driving device to regulate an input voltage to a voltage necessary for each lamp function and to apply the voltage to the first light source group and the second light source group, a switching device to control an On/Off state of the first light source group and the second light source group, and a control device to time-division control a time to turn on/off the switching device by internetworking with the LED lamp driving device and to control a light quantity of the first light source group and the second light source group.Type: ApplicationFiled: July 7, 2021Publication date: April 14, 2022Inventors: Choong Seob Park, Jin Hyun Kim, So Jeong Kang, Chul Sung Lee, Ga Hee Lee
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Patent number: 11175812Abstract: Disclosed is an electronic device including a communicator, a storage, and controller. The controller, through the communicator, transmits first state setting information for changing the state of at least one among the plurality of electronic devices to correspond to a started operation mode among the plurality of state setting information when one among the plurality of operation modes starts, and transmits second state setting information for changing the state of at least one among the plurality of electronic devices to correspond to at least one of the changed operation mode and the changed environment among the plurality of state setting information when one of the operation mode and the surrounding environment is changed.Type: GrantFiled: September 20, 2016Date of Patent: November 16, 2021Assignee: Samsung Electronics Co., Ltd.Inventors: Ga-hee Lee, Mee-jeong Park
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Publication number: 20200058299Abstract: Provided are a device and a method for providing a response message to a voice input of a user. The method, performed by a device, of providing a response message to a voice input of a user includes: receiving the voice input of the user; determining a destination of the user and an intention of the user, by analyzing the received voice input; obtaining association information related to the destination; generating the response message that recommends a substitute destination related to the intention of the user, based on the obtained association information; and displaying the generated response message.Type: ApplicationFiled: November 14, 2017Publication date: February 20, 2020Applicant: SAMSUNG ELECTRONICS CO., LTD.Inventors: Ga-hee LEE, In-dong LEE, Se-chun KANG, Hyung-rai OH
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Publication number: 20190065037Abstract: The disclosure relates to an electronic device including a communicator, a storage, and controller. The communicator is configured to communicate with a plurality of electronic devices, the storage is configured to store a plurality of operation modes relevant to the plurality of electronic devices, and the controller is configured to, through the communicator, transmit first state setting information for changing the state of at least one among the plurality of electronic devices to correspond to a started operation mode among the plurality of pieces of state setting information when one among the plurality of operation modes starts, and transmit second state setting information for changing the state of at least one among the plurality of electronic devices to correspond to at least one of the changed operation mode and the changed environment among the plurality of pieces of state setting information when one of the operation mode and the surrounding environment is changed.Type: ApplicationFiled: September 20, 2016Publication date: February 28, 2019Applicant: Samsung Electronics Co., Ltd.Inventors: Ga-hee LEE, Mee-jeong PARK
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Patent number: 9349597Abstract: A semiconductor memory device includes conductive films and insulating layers alternately stacked on a substrate, substantially vertical channel layers penetrating the conductive films and the insulating layers, multilayer films including a charge storage film interposed between the conductive films and the substantially vertical channel layers, and a first anti-diffusion film formed on etched surfaces of the conductive films.Type: GrantFiled: September 13, 2012Date of Patent: May 24, 2016Assignee: SK HYNIX INC.Inventors: Yong Dae Park, Ga Hee Lee
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Patent number: 8504086Abstract: A method and apparatus allocates a Physical Cell Identifier (PCID) in a wireless communication system by considering a PCID reuse factor. An allowable PCID list is acquired from a server. A set of candidate PCIDs is determined from the allowable PCID list according to PCID allocation conditions. A received signal strength of each cell using the determined set of candidate PCID is determined. At least one PCID is selected by using a PCID reuse factor and the received signal strength of each of the cells using the determined set of candidate PCIDs.Type: GrantFiled: October 7, 2010Date of Patent: August 6, 2013Assignees: Samsung Electronics Co., Ltd., Industry-University Cooperation Foundation Sogang UniversityInventors: Jung-Min So, Hee-Jung Byun, Bong-Jhin Shin, Ga-Hee Lee, Dae-Hyoung Hong, Mi-Sun Do, Hyon-Goo Kang
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Publication number: 20130161725Abstract: A semiconductor memory device includes conductive films and insulating layers alternately stacked on a substrate, substantially vertical channel layers penetrating the conductive films and the insulating layers, multilayer films including a charge storage film interposed between the conductive films and the substantially vertical channel layers, and a first anti-diffusion film formed on etched surfaces of the conductive films.Type: ApplicationFiled: September 13, 2012Publication date: June 27, 2013Applicant: SK HYNIX INC.Inventors: Yong Dae PARK, Ga Hee LEE
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Publication number: 20110086652Abstract: A method and apparatus allocates a Physical Cell Identifier (PCID) in a wireless communication system by considering a PCID reuse factor. An allowable PCID list is acquired from a server. A set of candidate PCIDs is determined from the allowable PCID list according to PCID allocation conditions. A received signal strength of each cell using the determined set of candidate PCID is determined. At least one PCID is selected by using a PCID reuse factor and the received signal strength of each of the cells using the determined set of candidate PCIDs.Type: ApplicationFiled: October 7, 2010Publication date: April 14, 2011Applicants: SAMSUNG ELECTRONICS CO., LTD., INDUSTRY-UNIVERSITY COOPERATION FOUNDATION SOGANG UNIVERSITYInventors: Jung-Min So, Hee-Jung Byun, Bong-Jhin Shin, Ga-Hee Lee, Dae-Hyoung Hong, Mi-Sun Do, Hyon-Goo Kang
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Publication number: 20100227469Abstract: A method of manufacturing a flash memory device. According to the invention, a floating gate can be formed and a distance between cells can be secured sufficiently by using one conductive layer without using a SA-STI process that cannot be applied to the manufacture process of high-integrated semiconductor devices. It is therefore possible to minimize an interference phenomenon between neighboring cells. Furthermore, an isolation film is etched after a photoresist film covering only a high-voltage transistor region is formed, or a gate oxide film is formed after a semiconductor substrate is etched at a thickness, which is the same as that of the gate oxide film of the high-voltage transistor region, so that a step between the cell region and the high-voltage transistor region is the same. Accordingly, the coupling ratio can be increased even by the gate oxide film of the high-voltage transistor region, which is thicker than the tunnel oxide film of the cell region.Type: ApplicationFiled: May 14, 2010Publication date: September 9, 2010Applicant: HYNIX SEMICONDUCTOR INC.Inventors: Joo Won Hwang, Byung Soo Park, Ga Hee Lee
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Patent number: 7745284Abstract: A method of manufacturing a flash memory device. According to the invention, a floating gate can be formed and a distance between cells can be secured sufficiently by using one conductive layer without using a SA-STI process that cannot be applied to the manufacturing process of highly integrated semiconductor devices. It is therefore possible to minimize interference between neighboring cells.Type: GrantFiled: August 8, 2006Date of Patent: June 29, 2010Assignee: Hynix Semiconductor Inc.Inventors: Joo Won Hwang, Byung Soo Park, Ga Hee Lee
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Publication number: 20070161187Abstract: A method of manufacturing a flash memory device. According to the invention, a floating gate can be formed and a distance between cells can be secured sufficiently by using one conductive layer without using a SA-STI process that cannot be applied to the manufacture process of high-integrated semiconductor devices. It is therefore possible to minimize an interference phenomenon between neighboring cells. Furthermore, an isolation film is etched after a photoresist film covering only a high-voltage transistor region is formed, or a gate oxide film is formed after a semiconductor substrate is etched at a thickness, which is the same as that of the gate oxide film of the high-voltage transistor region, so that a step between the cell region and the high-voltage transistor region is the same. Accordingly, the coupling ratio can be increased even by the gate oxide film of the high-voltage transistor region, which is thicker than the tunnel oxide film of the cell region.Type: ApplicationFiled: August 8, 2006Publication date: July 12, 2007Applicant: HYNIX SEMICONDUCTOR INC.Inventors: Joo Won Hwang, Byung Soo Park, Ga Hee Lee