Abstract: Provided is high purity cobalt chloride having a purity of 5N (99.999%) or higher, and a manufacturing method of the high purity cobalt chloride via electrolysis, wherein cobalt having a purity of 5N or higher is used as an anode, a diluted hydrochloric acid bath having a pH of 1.5 to 3.0 is used as an electrolytic solution, the cobalt anode and a cathode plate are partitioned with an anion exchange membrane, and electrodeposition of the cobalt onto the cathode plate is thereby inhibited. An object of this invention is to provide a manufacturing method capable of providing high purity cobalt chloride at a higher purity and at a lower production cost than conventional methods. Under circumstances where demands for cobalt chloride may increase, cobalt chloride needs to be manufactured at high volume and at low cost, and the present invention offers a technique capable of satisfying the foregoing requirements.

Abstract: Provided are: copper chloride which can provide an organometallic complex that contains impurities at a small content and therefore has high purity; a CVD raw material; a copper wiring film; and a method for producing copper chloride. Copper chloride which has purity of 6 N or more and has an Ag content of 0.5 wtppm or less.

Abstract: A high purity cobalt chloride having a purity of 5N (99.999%) or higher and a manufacturing method of the high purity cobalt chloride via electrolysis are provided. In the method, cobalt having a purity of 5N or higher is used as an anode, a diluted hydrochloric acid bath having a pH of 1.5 to 3.0 is used as an electrolytic solution, the cobalt anode and a cathode plate are partitioned with an anion exchange membrane, and electrodeposition of the cobalt onto the cathode plate is thereby inhibited. The manufacturing method is capable of providing high purity cobalt chloride at a higher purity and at a lower production cost than conventional methods. Under circumstances where demands for cobalt chloride may increase, cobalt chloride needs to be manufactured at high volume and at low cost, and the method disclosed herein provides a technique capable of satisfying the foregoing requirements.

Abstract: Provided are: copper chloride which can provide an organometallic complex that contains impurities at a small content and therefore has high purity; a CVD raw material; a copper wiring film; and a method for producing copper chloride. Copper chloride which has purity of 6 N or more and has an Ag content of 0.5 wtppm or less.

Abstract: Copper or a copper alloy characterized in having an ?-ray emission of 0.001 cph/cm2 or less. Since recent semiconductor devices are produced to have higher density and higher capacity, there is greater risk of soft errors caused by the influence of ? rays emitted from materials positioned near semiconductor chips. In particular, there are strong demands for achieving higher purification of copper and copper alloys which are used near the semiconductor device, such as copper or copper alloy wiring lines, copper or copper alloy bonding wires, and soldering materials, and materials reduced in ?-ray emission are also demanded. Thus, the present invention elucidates the phenomenon in which ? rays are emitted from copper or copper alloys, and provides copper or copper alloy reduced in ?-ray emission which is adaptable to the demanded material, and a bonding wire in which such copper or copper alloy is used as its raw material.

Abstract: Disclosed is tin characterized in that a sample of the tin after melting and casting has an ? dose of less than 0.0005 cph/cm2. Since recent semiconductor devices are highly densified and of high capacity, there is an increasing risk of soft errors caused by the influence of ? rays emitted from materials in the vicinity of semiconductor chips. In particular, there are strong demands for high purification of solder materials and tin for use in the vicinity of semiconductor devices, and demands for materials with lower ? rays. Accordingly, an object of the present invention is to clarify the phenomenon of the generation of ? rays in tin and tin alloys, and to obtain high-purity tin, in which the ? dose has been reduced, suitable for the required materials, as well as a method for producing the same.

Abstract: Provided is high purity cobalt chloride having a purity of 5N (99.999%) or higher, and a manufacturing method of the high purity cobalt chloride via electrolysis, wherein cobalt having a purity of 5N or higher is used as an anode, a diluted hydrochloric acid bath having a pH of 1.5 to 3.0 is used as an electrolytic solution, the cobalt anode and a cathode plate are partitioned with an anion exchange membrane, and electrodeposition of the cobalt onto the cathode plate is thereby inhibited. An object of this invention is to provide a manufacturing method capable of providing high purity cobalt chloride at a higher purity and at a lower production cost than conventional methods. Under circumstances where demands for cobalt chloride may increase, cobalt chloride needs to be manufactured at high volume and at low cost, and the present invention offers a technique capable of satisfying the foregoing requirements.

Abstract: Provided are high-purity lanthanum, wherein the purity excluding rare-earth elements and gas components is 4N or higher, and amounts of aluminum, iron and copper in the lanthanum are respectively 100 wtppm or less; as well as high-purity lanthanum, wherein the purity excluding rare-earth elements and gas components is 4N or higher, amounts of aluminum, iron and copper in the lanthanum are respectively 100 wtppm or less, oxygen content is 1500 wtppm or less, elements of alkali metals and alkali earth metals are respectively 1 wtppm or less, elements of transition metals and high-melting-point metals other than those above are respectively 10 wtppm or less, and radioactive elements are respectively 10 wtppb or less. The invention aims to provide technology capable of efficiently and stably providing high-purity lanthanum, a sputtering target comprising high-purity lanthanum, and a thin film for metal gate mainly comprising high-purity lanthanum.

Abstract: Copper or a copper alloy characterized in having an ?-ray emission of 0.001 cph/cm2 or less. Since recent semiconductor devices are produced to have higher density and higher capacity, there is greater risk of soft errors caused by the influence of ? rays emitted from materials positioned near semiconductor chips. In particular, there are strong demands for achieving higher purification of copper and copper alloys which are used near the semiconductor device, such as copper or copper alloy wiring lines, copper or copper alloy bonding wires, and soldering materials, and materials reduced in ?-ray emission are also demanded. Thus, the present invention elucidates the phenomenon in which ? rays are emitted from copper or copper alloys, and provides copper or copper alloy reduced in ?-ray emission which is adaptable to the demanded material, and a bonding wire in which such copper or copper alloy is used as its raw material.

Abstract: Disclosed is tin characterized in that a sample of the tin after melting and casting has an ? dose of less than 0.0005 cph/cm2. Since recent semiconductor devices are highly densified and of high capacity, there is an increasing risk of soft errors caused by the influence of ? rays emitted from materials in the vicinity of semiconductor chips. In particular, there are strong demands for high purification of solder materials and tin for use in the vicinity of semiconductor devices, and demands for materials with lower ? rays. Accordingly, an object of the present invention is to clarify the phenomenon of the generation of ? rays in tin and tin alloys, and to obtain high-purity tin, in which the ? dose has been reduced, suitable for the required materials, as well as a method for producing the same.

Abstract: In order to obtain a high purity sputtered film for a capacitor electrode of a semiconductor memory and to make the sputtered film have uniform thickness and good adhesiveness with Si substrate, a high-purity Ru alloy target is provided, wherein a total content of the platinum group elements excluding Ru is in a range of 15 to 200 wtppm and remnants are Ru and inevitable impurities. Also, provided is a manufacturing method of the high-purity Ru alloy target, comprising the steps of mixing Ru powder having a purity of 99.9% or higher and powder of platinum group elements excluding Ru, performing press molding of the mixed powder to obtain a compact, performing electron beam melting of the compact to obtain an ingot, and forging the ingot at 1400 to 1900° C.

Abstract: Provided are high-purity lanthanum, wherein the purity excluding rare-earth elements and gas components is 4N or higher, and amounts of aluminum, iron and copper in the lanthanum are respectively 100 wtppm or less; as well as high-purity lanthanum, wherein the purity excluding rare-earth elements and gas components is 4N or higher, amounts of aluminum, iron and copper in the lanthanum are respectively 100 wtppm or less, oxygen content is 1500 wtppm or less, elements of alkali metals and alkali earth metals are respectively 1 wtppm or less, elements of transition metals and high-melting-point metals other than those above are respectively 10 wtppm or less, and radioactive elements are respectively 10 wtppb or less. The invention aims to provide technology capable of efficiently and stably providing high-purity lanthanum, a sputtering target comprising high-purity lanthanum, and a thin film for metal gate mainly comprising high-purity lanthanum.

Abstract: An object of the present invention is to provide a high-purity Ru alloy target for sputtering and its manufacturing method, which are capable of reducing harmful substances as much as possible, refining the crystal grains as much as possible so as to make the film thickness distribution during deposition to be uniform, and preventing deterioration in adhesiveness with an Si substrate, and which are suitable in forming a capacitor electrode material of a semiconductor memory, as well as a high-purity Ru alloy sputtered film obtained by sputtering this Ru alloy target. In order to achieve the foregoing object, the present invention provides a high-purity Ru alloy target, wherein the content of the platinum group elements excluding Ru is 15 to 200 and remnants are Ru and inevitable impurities.