Abstract: A method of etching a substrate, on which a multilayered film is formed, is provided. The multilayered film includes a silicon-containing insulating layer, an undercoat layer provided under the silicon-containing insulating layer, and a mask layer provided above the silicon-containing insulating layer. When the substrate is loaded into a process chamber, a process gas containing a fluorocarbon gas and a noble gas is supplied into the process chamber, and the multilayered film is etched by the plasma formed from the process gas. The noble gas contains a first gas having higher ionization energy than Ar gas, and momentum of an ionized particle of the first gas is less than momentum of an ionized particle of Ar gas.

Abstract: A method of etching a substrate, on which a multilayered film is formed, is provided. The multilayered film includes a silicon-containing insulating layer, an undercoat layer provided under the silicon-containing insulating layer, and a mask layer provided above the silicon-containing insulating layer. When the substrate is loaded into a process chamber, a process gas containing a fluorocarbon gas and a noble gas is supplied into the process chamber, and the multilayered film is etched by the plasma formed from the process gas. The noble gas contains a first gas having higher ionization energy than Ar gas, and momentum of an ionized particle of the first gas is less than momentum of an ionized particle of Ar gas.

Abstract: A method for etching a silicon film formed on a substrate includes supplying HBr gas, NF3 gas, and O2 gas into a chamber and performing a plurality of etching processes on the silicon film with a plasma generated by the supplied HBr gas, NF3 gas, and O2 gas, gradually reducing a flow rate of the HBr gas during the plurality of etching processes, and adjusting a flow rate of the O2 gas according to the reduction of the HBr gas.

Abstract: A method for etching a silicon film formed on a substrate includes supplying HBr gas, NF3 gas, and O2 gas into a chamber and performing a plurality of etching processes on the silicon film with a plasma generated by the supplied HBr gas, NF3 gas, and O2 gas, gradually reducing a flow rate of the HBr gas during the plurality of etching processes, and adjusting a flow rate of the O2 gas according to the reduction of the HBr gas.