Abstract: Provided is a wafer reclamation method for reclaiming a semiconductor wafer, on which a different material layer is formed, by removing the different material layer. The wafer reclamation method includes a physically removing step of physically removing the different material layer, a film forming step of forming a film on a surface of the semiconductor wafer from which the different material layer has been removed in the physically removing step, and a dry etching step of etching the semiconductor wafer by plasma together with the film formed in the film forming step.

Abstract: A semiconductor light-emitting device according to the present invention includes: a GaN substrate 1 containing an n-type impurity and being made of silicon carbide or a nitride semiconductor; a multilayer structure 10 provided on a main surface of the GaN substrate 1; a p-electrode 17 formed on the multilayer structure 10; a first n-electrode 18 substantially covering the entire rear surface of the GaN substrate 1; and a second n-electrode 20 provided on the first n-electrode 18 so as to expose at least a portion of the periphery of the first n-electrode 18.

Abstract: A semiconductor laser includes a nitride semiconductor substrate with a striped raised portion that extends in a resonant cavity length direction, a masking layer, which has been defined on the principal surface of the nitride semiconductor substrate and which has a striped opening in a selected area on the upper surface of the striped raised portion, and a nitride semiconductor multilayer structure, which has been grown on the selected area on the upper surface of the striped raised portion. The nitride semiconductor multilayer structure is thicker than nitride semiconductors on the masking layer, and the nitride semiconductor multilayer structure is broader in width than the striped opening of the masking layer and includes portions that have grown laterally onto the masking layer.

Abstract: A semiconductor light-emitting device according to the present invention includes: a GaN substrate 1 containing an n-type impurity and being made of silicon carbide or a nitride semiconductor; a multilayer structure 10 provided on a main surface of the GaN substrate 1; a p-electrode 17 formed on the multilayer structure 10; a first n-electrode 18 substantially covering the entire rear surface of the GaN substrate 1; and a second n-electrode 20 provided on the first n-electrode 18 so as to expose at least a portion of the periphery of the first n-electrode 18.

Abstract: A semiconductor light-emitting device according to the present invention includes: a GaN substrate 1 containing an n-type impurity and being made of silicon carbide or a nitride semiconductor; a multilayer structure 10 provided on a main surface of the GaN substrate 1; a p-electrode 17 formed on the multilayer structure 10; a first n-electrode 18 substantially covering the entire rear surface of the GaN substrate 1; and a second n-electrode 20 provided on the first n-electrode 18 so as to expose at least a portion of the periphery of the first n-electrode 18.

Abstract: A nitride semiconductor device according to the present invention includes a n-GaN substrate 10 and a semiconductor multilayer structure arranged on the principal surface of the n-GaN substrate 10 and including a p-type region, an n-type region and an active layer between them. An SiO2 layer 30 with an opening and a p-side electrode, which makes contact with a portion of the p-type region of the semiconductor multilayer structure, are arranged on the upper surface of the semiconductor multilayer structure. An n-side electrode 36 is arranged on the back surface of the substrate 10. The p-side electrode includes a p-side contact electrode 32 that contacts with the portion of the p-type region and a p-side interconnect electrode 34 that covers the p-side contact electrode 2 and the SiO2 layer 30. Part of the p-side contact electrode 32 is exposed under the p-side interconnect electrode 34.

Abstract: An nitride semiconductor device according to the present invention is a nitride semiconductor device including: an n-GaN substrate 10; a semiconductor multilayer structure 100 formed on a principal face of the n-GaN substrate 10, the semiconductor multilayer structure 100 including a p-type region and an n-type region; a p-side electrode 32 which is in contact with a portion of the p-type region included in the semiconductor multilayer structure 100; and an n-side electrode 34 provided on the rear face of the n-GaN substrate 10. The rear face of the n-GaN substrate includes a nitrogen surface, such that a carbon concentration at an interface between the rear face and the n-side electrode 34 is adjusted to 5 atom % or less.

Abstract: Provided is a wafer reclamation method for reclaiming a semiconductor wafer, on which a different material layer is formed, by removing the different material layer. The wafer reclamation method includes a physically removing step of physically removing the different material layer, a film forming step of forming a film on a surface of the semiconductor wafer from which the different material layer has been removed in the physically removing step, and a dry etching step of etching the semiconductor wafer by plasma together with the film formed in the film forming step.

Abstract: A semiconductor light-emitting device according to the present invention includes: a GaN substrate 1 containing an n-type impurity and being made of silicon carbide or a nitride semiconductor; a multilayer structure 10 provided on a main surface of the GaN substrate 1; a p-electrode 17 formed on the multilayer structure 10; a first n-electrode 18 substantially covering the entire rear surface of the GaN substrate 1; and a second n-electrode 20 provided on the first n-electrode 18 so as to expose at least a portion of the periphery of the first n-electrode 18.

Abstract: A nitride semiconductor device according to the present invention includes a n-GaN substrate 10 and a semiconductor multilayer structure arranged on the principal surface of the n-GaN substrate 10 and including a p-type region, an n-type region and an active layer between them. An SiO2 layer 30 with an opening and a p-side electrode, which makes contact with a portion of the p-type region of the semiconductor multilayer structure, are arranged on the upper surface of the semiconductor multilayer structure. An n-side electrode 36 is arranged on the back surface of the substrate 10. The p-side electrode includes a p-side contact electrode 2 that contacts with the portion of the p-type region and a p-side interconnect electrode 34 that covers the p-side contact electrode 2 and the SiO2 layer 30. Part of the p-side contact electrode 32 is exposed under the p-side interconnect electrode 34.

Abstract: An nitride semiconductor device according to the present invention is a nitride semiconductor device including: an n-GaN substrate 10; a semiconductor multilayer structure 100 formed on a principal face of the n-GaN substrate 10, the semiconductor multilayer structure 100 including a p-type region and an n-type region; a p-side electrode 32 which is in contact with a portion of the p-type region included in the semiconductor multilayer structure 100; and an n-side electrode 34 provided on the rear face of the n-GaN substrate 10. The rear face of the n-GaN substrate includes a nitrogen surface, such that a carbon concentration at an interface between the rear face and the n-side electrode 34 is adjusted to 5 atom % or less.

Abstract: A method for fabricating nitride semiconductor devices according to the present invention includes the steps of: (A) providing a nitride semiconductor substrate, which will be split into chip substrates, which includes device portions that will function as the respective chip substrates when the substrate is split and interdevice portions that connect the device portions together, and in which the average thickness of the interdevice portions is smaller than the thickness of the device portions; (B) defining a masking layer, which has striped openings over the device portions, on the upper surface of the nitride semiconductor substrate; (C) selectively growing nitride semiconductor layers on portions of the upper surface of the nitride semiconductor substrate, which are exposed through the openings of the masking layer; and (D) cleaving the nitride semiconductor substrate along the interdevice portions of the nitride semiconductor substrate, thereby forming nitride semiconductor devices on the respectively sp

Abstract: A semiconductor laser includes a nitride semiconductor substrate with a striped raised portion that extends in a resonant cavity length direction, a masking layer, which has been defined on the principal surface of the nitride semiconductor substrate and which has a striped opening in a selected area on the upper surface of the striped raised portion, and a nitride semiconductor multilayer structure, which has been grown on the selected area on the upper surface of the striped raised portion. The nitride semiconductor multilayer structure is thicker than nitride semiconductors on the masking layer, and the nitride semiconductor multilayer structure is broader in width than the striped opening of the masking layer and includes portions that have grown laterally onto the masking layer.

Abstract: A semiconductor laser device (10) includes a resonant cavity (12) in which a quantum well active layer (11) made up of barrier layers of gallium nitride and well layers of indium gallium nitride is vertically sandwiched between at least light guide layers of n- and p-type aluminum gallium nitride. An end facet reflective film (13) is formed on a reflective end facet (10b) opposite to a light-emitting end facet (10a) in the resonant cavity (12). The end facet reflective film (13) has a structure including a plurality of unit reflective films (130), each of which is made up of a low-refractive-index film (13a) of silicon dioxide and a high-refractive-index film (13b) of niobium oxide. The low-and high-refractive-index films are deposited in this order on the end facet of the resonant cavity (12).

Abstract: The method for fabricating a nitride semiconductor of the present invention includes the steps of: (1) growing a first semiconductor layer made of a first group III nitride over a substrate by supplying a first group III source and a group V source containing nitrogen; and (2) growing a second semiconductor layer made of a second group III nitride on the first semiconductor layer by supplying a second group III source and a group V source containing nitrogen. At least one of the steps (1) and (2) includes the step of supplying a p-type dopant over the substrate, and an area near the interface between the first semiconductor layer and the second semiconductor layer is grown so that the density of the p-type dopant locally increases.

Abstract: On an Si substrate 1, a buffer layer 2, a SiGe layer 3, and an Si cap layer 4 are formed. A mask is formed on the substrate, and then the substrate is patterned. In this manner, a trench 7a is formed so as to reach the Si substrate 1 and have the side faces of the SiGe layer 3 exposed. Then, the surface of the trench 7a is subjected to heat treatment for one hour at 750° C. so that Ge contained in a surface portion of the SiGe layer 3 is evaporated. Thus, a Ge evaporated portion 8 having a lower Ge content than that of other part of the SiGe layer 3 is formed in part of the SiGe layer 3 exposed at part of the trench 7a. Thereafter, the walls of the trench 7a are oxidized.

Abstract: A method for fabricating nitride semiconductor devices according to the present invention includes the steps of: (A) providing a nitride semiconductor substrate, which will be split into chip substrates, which includes device portions that will function as the respective chip substrates when the substrate is split and interdevice portions that connect the device portions together, and in which the average thickness of the interdevice portions is smaller than the thickness of the device portions; (B) defining a masking layer, which has striped openings over the device portions, on the upper surface of the nitride semiconductor substrate; (C) selectively growing nitride semiconductor layers on portions of the upper surface of the nitride semiconductor substrate, which are exposed through the openings of the masking layer; and (D) cleaving the nitride semiconductor substrate along the interdevice portions of the nitride semiconductor substrate, thereby forming nitride semiconductor devices on the respectively sp

Abstract: A material containing, as a main component, an organic silicon compound represented by the following general formula: R1xSi(OR2)4-x (where R1 is a phenyl group or a vinyl group; R2 is an alkyl group; and x is an integer of 1 to 3) is caused to undergo plasma polymerization or react with an oxidizing agent to form an interlayer insulating film composed of a silicon oxide film containing an organic component. As the organic silicon compound where R1 is a phenyl group, there can be listed phenyltrimethoxysilane or diphenyldimethoxysilane. As the organic silicon compound where R1 is a vinyl group, there can be listed vinyltrimethoxysilane or divinyldimethoxysilane.

Abstract: A method for fabricating a nitride semiconductor laser device including a step to expose surfaces of an n-type nitride semiconductor layer (102) and a p-type nitride semiconductor layer (108); a step to cover the surface of the multi-layered semiconductor; with an insulating film (109) that has a thickness greater than the difference in levels between the exposed surface of the n-type nitride semiconductor layer (102) and the outermost surface of the p-type nitride semiconductor layer (108); a step to flatten the surface of the insulating film (109); and a step to form an n-type electrode (111) and a p-type electrode (110) electrically connected to the n-type nitride semiconductor layer (102) and the p-type nitride semiconductor layer (108), respectively. This method makes it possible to obtain a nitride semiconductor laser device that is highly reliable and exhibits an excellent heat diffusing property.

Abstract: The semiconductor light-emitting device of the present invention includes a first semiconductor layer of a first conductivity type formed substantially in a uniform thickness on a substrate and a second semiconductor layer of a second conductivity type formed substantially in a uniform thickness on the first semiconductor layer. The device further includes an active layer, formed substantially in a uniform thickness between the first semiconductor layer and the second semiconductor layer, for generating emission light. The device also comprises a first electrode for supplying a drive current to the first semiconductor layer and a second electrode for supplying a drive current to the second semiconductor layer. The device is adapted that the first or second electrode is a divided electrode comprising a plurality of conductive members spaced apart from each other.