Abstract: An apparatus includes an interface and a processor. The interface is configured for exchanging signals with: (i) a probe, which is inserted into a body of a patient and includes a flexible distal-end assembly, wherein the distal-end assembly comprises a magnetic position sensor and two or more intra-body electrodes, and, (ii) multiple body-surface electrodes attached externally to the body of the patient. The processor is configured to estimate, based on the signals exchanged with the probe, a spatial displacement of the magnetic sensor between consecutive measurements, and to estimate a position of the distal-end assembly in the body based on (i) the signals exchanged with the intra-body electrodes and the body-surface electrodes, (ii) a-priori known spatial relationships between two or more of the intra-body electrodes of the probe and (iii) the estimated spatial displacement of the magnetic sensor.

Abstract: An apparatus includes an interface and a processor. The interface is configured for exchanging signals with: (i) a probe, which is inserted into a body of a patient and includes a flexible distal-end assembly, wherein the distal-end assembly comprises a magnetic position sensor and two or more intra-body electrodes, and, (ii) multiple body-surface electrodes attached externally to the body of the patient. The processor is configured to estimate, based on the signals exchanged with the probe, a spatial displacement of the magnetic sensor between consecutive measurements, and to estimate a position of the distal-end assembly in the body based on (i) the signals exchanged with the intra-body electrodes and the body-surface electrodes, (ii) a-priori known spatial relationships between two or more of the intra-body electrodes of the probe and (iii) the estimated spatial displacement of the magnetic sensor.

Abstract: An apparatus includes a shaft, a flexible distal-end assembly, two or more sensing-electrodes, and a fiber-optic shape sensor. The shaft is configured for insertion into a body of a patient. The flexible distal-end assembly is fitted at a distal end of the shaft. The two or more sensing-electrodes are disposed over the distal-end assembly and are configured to generate signals indicative of positions of the sensing-electrodes in the body. The fiber-optic shape sensor is coupled to a portion of the distal-end assembly, wherein the two or more sensing-electrodes have a-priori known distances from a known location over the fiber-optic shape sensor, and wherein the fiber-optic shape sensor is configured to provide an indication of a spatial deformation of the flexible distal-end assembly.

Abstract: A low Rdson LDMOS transistor having a shallow field oxide region that separates a gate electrode of the transistor from a drain diffusion region of the transistor. The shallow field oxide region is formed separate from the field isolation regions (e.g., STI regions) used to isolate circuit elements on the substrate. Fabrication of the shallow field oxide region is controlled such that this region extends below the upper surface of the semiconductor substrate to a depth that is much shallower than the depth of field isolation regions. For example, the shallow field oxide region may extend below the upper surface of the substrate by only Angstroms or less. As a result, the current path through the resulting LDMOS transistor is substantially unimpeded by the shallow field oxide region, resulting in a low on-resistance.

Abstract: A low Rdson LDMOS transistor having a shallow field oxide region that separates a gate electrode of the transistor from a drain diffusion region of the transistor. The shallow field oxide region is formed separate from the field isolation regions (e.g., STI regions) used to isolate circuit elements on the substrate. Fabrication of the shallow field oxide region is controlled such that this region extends below the upper surface of the semiconductor substrate to a depth that is much shallower than the depth of field isolation regions. For example, the shallow field oxide region may extend below the upper surface of the substrate by only Angstroms or less. As a result, the current path through the resulting LDMOS transistor is substantially unimpeded by the shallow field oxide region, resulting in a low on-resistance.